AOL1420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.7mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) -RoHS Compliant -Halogen and Antimony Free Green Device* UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D D Bottom tab connected to drain G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C G Continuous Drain Current B,G Units V ±20 V 85 TC=100°C B Pulsed Drain Current ID 63 IDM 150 TA=25°C Continuous Drain Current G Maximum 30 A 19 TA=70°C IDSM 15 Avalanche Current C IAR 30 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 112 mJ Power Dissipation B TA=25°C Power Dissipation A 100 PD TC=100°C 2.08 PDSM TA=70°C Junction and Storage Temperature Range W 50 W 1.3 TJ, TSTG °C -55 to 175 Thermal Characteristics Symbol Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Case C Steady-State Alpha & Omega Semiconductor, Ltd. RθJA RθJC Typ Max Units 19.6 25 °C/W 50 0.9 60 1.5 °C/W °C/W www.aosmd.com AOL1420 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ 30 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 85 VGS=10V, ID=20A 100 nA 3 V 2.9 3.7 4.4 5.5 5.5 A Static Drain-Source On-Resistance VGS=4.5V, ID=20A 4.4 gFS Forward Transconductance VDS=5V, ID=20A 106 VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 3700 VGS=0V, VDS=15V, f=1MHz mΩ mΩ S 1 V 85 A 4400 pF 700 pF 390 VGS=0V, VDS=0V, f=1MHz µA 1.8 RDS(ON) TJ=125°C Units V VDS=24V, VGS=0V VGS(th) Coss Max pF 0.54 0.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 63 76 nC Qg(4.5V) Total Gate Charge 33 40 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=4.5V, VDS=15V, ID=20A 8.6 nC 17.6 nC 12 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 34 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 30 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω Turn-Off Fall Time 15.5 ns 40 ns 14 ns 41 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Rev3: Jun 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 150 VDS=5V 125 50 10V ID(A) ID (A) 40 4.0V 100 75 125°C 30 20 50 25°C 3.5V 10 25 VGS=3V 0 0 0 1 2 3 4 1.5 5 2 8 3.5 4 4.5 Normalized On-Resistance 1.6 7 6 VGS=4.5V 5 4 VGS=10V 3 2 ID=20A 1.4 VGS=10V VGS=4.5V 1.2 1 0.8 0 10 20 30 40 50 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 8 1.0E+02 125°C 1.0E+01 6 125°C 4 1.0E+00 IS (A) RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics RDS(ON) (mΩ ) 2.5 ID=20A 25°C 1.0E-01 25°C 1.0E-02 1.0E-03 2 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOL1420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 10 VDS=15V ID=20A Ciss 4000 Capacitance (pF) VGS (Volts) 8 6 4 2 3000 2000 Coss 1000 Crss 0 0 0 10 20 30 40 50 60 70 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 RDS(ON) limited 1ms 10ms 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJA=1.5°C/W 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VDS (Volts) 10 400 200 0.1 0.1 600 DC TJ(Max)=175°C TC=25°C 1 Power (W) 100µs 10 TJ(Max)=175°C TC=25°C 800 100 ID (Amps) 10 1000 10µs Zθ JC Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 100 Power Dissipation (W) ID(A), Peak Avalanche Current 120 80 60 tA = 40 L ⋅ ID BV − VDD 20 0 0.00001 100 80 60 40 20 0 0.0001 0.001 0.01 0 25 100 100 80 80 60 40 75 100 125 150 175 60 40 20 20 0 0.01 0 0 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note B) 10 Zθ JA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note B) Power (W) Current rating ID(A) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60 °C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1420 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com