AOD404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD404 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7mΩ (VGS = 10V) RDS(ON) < 8mΩ (VGS = 4.5V) -RoHS Compliant -Halogen Free* UIS TESTED! Rg,Ciss,Coss,Crss Tested TO-252 D-PAK Top View D Bottom View D G G S G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TC=25°C Continuous Drain B,G Current G Maximum 30 Units V ±12 V 85 TC=100°C B ID 65 Pulsed Drain Current IDM 200 Avalanche Current C IAR 30 A EAR 120 mJ Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Case C 2.5 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 1.6 TJ, TSTG t ≤ 10s Steady-State Steady-State W 50 PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient 100 PD TC=100°C A RθJA RθJL Typ 14.2 39 0.8 °C Max 20 50 1.5 Units °C/W °C/W °C/W www.aosmd.com AOD404 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 5 Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 85 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 100 nA 2 V 5.4 7 8.4 10.5 6.6 8 mΩ 1 V 85 A 2520 pF 165 231 pF 0.95 1.2 Ω 19.7 24 nC A 90 2100 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge VGS=4.5V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge 7.9 tD(on) Turn-On DelayTime 5.9 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω mΩ S 536 0.5 µA 1.6 0.74 DYNAMIC PARAMETERS Input Capacitance Ciss Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ pF 3.6 nC nC 10 ns 11 17 ns 36.2 55 ns 12 18 ns IF=20A, dI/dt=100A/µs 35 42 Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 33 50 ns nC Body Diode Reverse Recovery Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev 8: Sep 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 3.5V 50 50 VDS=5V 3V 40 30 30 20 25°C 20 VGS=2.5V 10 10 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 7.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance ID=20A 1.6 VGS=4.5V 6.5 VGS=10V 1.4 6 VGS=4.5V 1.2 VGS=10V 5.5 5 4.5 1 0.8 0 10 20 30 40 50 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 20 1.0E+01 16 125°C 1.0E+00 ID=20A IS (A) RDS(ON) (mΩ ) 3.5 1.8 7 RDS(ON) (mΩ ) 125°C ID(A) ID (A) 40 12 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 8 25°C 1.0E-04 1.0E-05 4 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 www.aosmd.com AOD404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 5 VDS=15V ID=20A 3000 Capacitance (pF) VGS (Volts) 4 3 2 2500 Ciss 2000 1500 Coss 1000 1 Crss 500 0 0 0 5 10 15 20 25 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000 RDS(ON) limited 10µs 1ms 10ms 80 0.1s 10 1s TJ(Max)=150°C TA=25°C 1 TJ(Max)=150°C TA=25°C 100µs Power (W) ID (Amps) 30 100 100 60 40 10s 20 DC 0 0.01 0.1 0.1 1 10 100 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 100 Power Dissipation (W) ID(A), Peak Avalanche Current 120 80 60 tA = 40 L ⋅ ID BV − VDD 20 0 0.00001 100 80 60 40 20 0 0.0001 0.001 0.01 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 100 Current rating ID(A) 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD404 G ate C harge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BV Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Isd L Vgs Alpha & Omega Semiconductor, Ltd. + Vdd IF t rr dI/dt I RM Vdd VDC www.aosmd.com