AOL1446 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1446 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.5V) -RoHS Compliant -Halogen and Antimony Free Green Device* UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8 TM Top View D D Bottom tab connected to drain S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current B G TC=100°C ID 70 200 IDSM C C TC=25°C Power Dissipation B Power Dissipation A TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. A IAR 30 A EAR 135 mJ 100 2.1 W 1.3 -55 to 175 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 50 PDSM TA=70°C Maximum Junction-to-CaseC A 11 PD TC=100°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient V 14 TA=70°C Repetitive avalanche energy L=0.3mH ±20 IDM TA=25°C Avalanche Current Units V 85 Pulsed Drain Current Continuous Drain Current G Maximum 30 RθJA RθJC Typ 19.5 48 1 °C Max 25 60 1.5 Units °C/W °C/W °C/W www.aosmd.com AOL1446 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Min Conditions ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 100 RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Gate resistance V µA 100 VGS=10V, ID=20A Rg 1 Units 5 Gate Threshold Voltage Crss 0.005 TJ=55°C VGS(th) Output Capacitance Max 30 VDS=24V, VGS=0V IGSS Coss Typ 2.3 nA 3 V A 5 7 6.7 8.1 8.4 11 mΩ 1 V 85 A 1600 pF mΩ 60 0.72 1325 VGS=0V, VDS=15V, f=1MHz 535 VGS=0V, VDS=0V, f=1MHz 0.95 S pF 155 pF 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 26 32 nC Qg(4.5V) Total Gate Charge 13.5 18 nC VGS=4.5V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge 6.6 tD(on) Turn-On DelayTime 7.2 10 ns tr Turn-On Rise Time 12.5 18 ns tD(off) Turn-Off DelayTime 22 33 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 29 36 nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 3.2 nC nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Revision 2: June 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 50 4.0V 50 40 125°C ID(A) ID (A) 40 VDS=5V 30 3.5V 30 25°C 20 20 10 10 VGS=3V 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 4.5 Normalized On-Resistance 1.8 9 VGS=4.5V 8 7 6 5 VGS=10V 4 0 10 20 30 40 50 1.6 ID=20A VGS=10V 1.4 VGS=4.5V 1.2 1 0.8 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 20 125°C 1.0E+01 16 1.0E+00 IS (A) ID=20A RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics 10 RDS(ON) (mΩ ) 2.5 12 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 8 25°C 1.0E-04 1.0E-05 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOL1446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=15V ID=20A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 1600 Ciss 1200 Coss 800 400 0 Crss 0 0 5 10 15 20 25 30 0 Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) 100 10µs 1ms 20 25 30 TJ(Max)=175°C TA=25°C 300 100µs 10 DC 200 100 TJ(Max)=175°C TA=25°C 0 0.1 0.1 1 10 100 10 1 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note H) Zθ Jc Normalized Transient Thermal Resistance 15 400 RDS(ON) limited 1 10 VDS (Volts) Figure 8: Capacitance Characteristics Power (W) 1000 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJC=1.5°C/W PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 80 Power Dissipation (W) ID(A), Peak Avalanche Current 100 60 40 20 0 90 60 30 0 0.00001 0.0001 0.001 0.01 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 100 100 80 80 Power (W) Current rating ID(A) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 60 40 20 60 40 20 0 0 0 25 50 75 100 125 150 175 0.01 TCASE (°C) Figure 14: Current De-rating (Note B) 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60 °C/W 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1446 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg I AR Vdd Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Isd L + VDC Ig Alpha & Omega Semiconductor, Ltd. - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com