AON6938 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Q1 30V Q2 30V ID (at VGS=10V) 30A 42A RDS(ON) (at VGS=10V) <8.2mΩ <2.2mΩ RDS(ON) (at VGS = 4.5V) <11.5mΩ <3.3mΩ VDS 100% UIS Tested Application 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN5X6 Top View Bottom View PIN1 Bottom View Bottom View Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current C Avalanche Current Units V ±20 ±20 V 30 42 ID TC=100°C IDM TA=25°C Continuous Drain Current Max Q2 23 33 117 168 IDSM TA=70°C C 30 17 33 13 26 A A IAS 35 60 A Avalanche Energy L=0.05mH C EAS 31 90 mJ VDS Spike VSPIKE 100ns TC=25°C Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A PDSM TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0 : Oct 2011 36 Steady-State Steady-State 78 12.5 31 3.6 4.3 2.3 2.7 TJ, TSTG Symbol t ≤ 10s RθJA RθJC V 31 -55 to 150 Typ Q1 29 56 3.3 www.aosmd.com Typ Q2 24 50 1.2 Max Q1 Max Q2 35 29 67 60 4 1.6 W W °C Units °C/W °C/W °C/W Page 1 of 10 AON6938 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance 5 1.5 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=15V, ID=20A 0.55 µA 100 nA 2.5 V 6.8 8.2 9.7 11.6 9.2 11.5 mΩ 1 V 30 A 63 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge 1.95 0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ mΩ S 1150 pF 180 pF 105 pF 1.1 1.65 Ω 20 24 nC 9.5 11.4 nC 2.7 nC Gate Drain Charge 5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 2 ns 17 ns tf Turn-Off Fall Time 3.5 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 8.7 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 13.5 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Oct 2011 www.aosmd.com Page 2 of 10 AON6938 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 4.5V 6V 7V 10V 80 VDS=5V 5V 60 4V 60 ID(A) ID (A) 3.5V 40 40 125°C 20 VGS=3V 20 25°C 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 14 Normalized On-Resistance 1.8 12 VGS=4.5V RDS(ON) (mΩ Ω) 0.5 10 8 6 VGS=10V VGS=10V ID=20A 1.6 1.4 17 VGS=4.5V 5 ID=20A 2 10 1.2 1 4 0 5 10 15 20 25 0.8 30 0 25 25 75 100 125 150 175 1.0E+02 ID=20A 1.0E+01 40 20 1.0E+00 125°C 1.0E-01 15 IS (A) RDS(ON) (mΩ Ω) 50 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 125°C 25°C 1.0E-02 1.0E-03 10 1.0E-04 25°C 1.0E-05 5 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : Oct 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 10 AON6938 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1400 VDS=15V ID=20A Ciss 1200 Capacitance (pF) VGS (Volts) 8 6 4 1000 800 600 400 Coss 2 200 Crss 0 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 25 0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 160 100.0 TJ(Max)=150°C TC=25°C 100us 10.0 1ms DC 1.0 100ms Power (W) 10µs RDS(ON) ID (Amps) 5 120 TJ(Max)=150°C TC=25°C 0.1 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4°C/W 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : Oct 2011 www.aosmd.com Page 4 of 10 AON6938 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100.0 IAR (A) Peak Avalanche Current 35 TA=25°C Power Dissipation (W) 30 TA=100°C TA=150°C TA=125°C 25 20 15 10 5 0 10.0 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 40 10000 30 1000 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 150 Power (W) Current rating ID(A) TA=25°C 20 17 5 2 10 100 10 10 1 0 0 25 50 75 100 125 0.00001 150 TCASE (° °C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.001 40 RθJA=67°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : Oct 2011 www.aosmd.com Page 5 of 10 AON6938 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance 5 1.2 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd 1.7 nA 2.2 V 1.8 2.2 2.6 3.2 2.6 3.3 96 0.7 VGS=10V, VDS=15V, ID=20A 0.9 µA 100 mΩ mΩ S 1 V 42 A 2719 VGS=0V, VDS=15V, f=1MHz Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ pF 1204 pF 169 pF 2.0 3 Ω 44 60 nC 21 28 nC 9 nC Gate Drain Charge 7 nC tD(on) Turn-On DelayTime 9.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 5.2 ns 32.5 ns tf Turn-Off Fall Time 10.3 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 19.6 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 42.7 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Oct 2011 www.aosmd.com Page 6 of 10 AON6938 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V 4V 3.5V VDS=5V 100 80 4.5V 80 ID(A) ID (A) 60 60 125°C 40 40 20 VGS=3V 20 25°C 0 0 0 1 2 3 4 0 5 5 2 3 4 5 Normalized On-Resistance 1.6 4 VGS=4.5V RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 2 1 VGS=10V 0 VGS=4.5V ID=20A 1.4 1.2 VGS=10V ID=20A 1 17 5 2 10 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 6 ID=20A 1.0E+01 1.0E+0040 125°C IS (A) RDS(ON) (mΩ Ω) 4 125°C 1.0E-01 1.0E-02 2 25°C 1.0E-03 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : Oct 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.2 Page 7 of 10 AON6938 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 10 VDS=15V ID=20A 3500 Ciss 3000 Capacitance (pF) VGS (Volts) 8 6 4 2500 2000 1500 Coss 1000 2 500 0 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 0 50 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 10µs RDS(ON) limited 160 10.0 100µs DC 1ms 10ms 100ms 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 10µs Power (W) 100.0 ID (Amps) Crss 120 80 17 5 2 10 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.01 0.1 10 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.6°C/W PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : Oct 2011 www.aosmd.com Page 8 of 10 AON6938 100 50 80 40 Current rating ID(A) Power Dissipation (W) Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 40 20 30 20 10 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : Oct 2011 www.aosmd.com Page 9 of 10 AON6938 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0 : Oct 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 10 of 10