AOSMD AON6910A

AON6910A
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6910A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and board
space utilization.It includes two specialized MOSFETs in a dual
Power DFN5x6B package. The Q1 "High Side" MOSFET is
desgined to minimze switching losses. The Q2 "Low Side"
MOSFET is desgined for low R DS(ON) to reduce conduction
losses.Power losses are minimized due to an extremely low
combination of R DS(ON) and Crss.In addition,switching behavior
is well controlled with a "Schottky style" soft recovery body
diode.
Q1
30V
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
37A
<14mΩ
RDS(ON) (at VGS = 4.5V)
<20mΩ
Q2
30V
80A
<4.1mΩ
<5.0mΩ
100% UIS Tested
100% Rg Tested
DFN5X6B
Top View
Bottom View
PIN1
Bottom View
Top View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
VDS
Drain-Source Voltage
VGS
±20
Gate-Source Voltage
Continuous Drain
Current
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
37
ID
TC=100°C
IDM
TA=25°C
IDSM
TA=70°C
Max Q2
Units
V
±12
V
30
80
23
52
85
190
9.1
16
7.2
13
A
A
Avalanche Current C
IAS, IAR
21
35
A
Avalanche Energy L=0.1mH C
EAS, EAR
22
61
mJ
TC=25°C
Power Dissipation B
PD
TC=100°C
TA=25°C
Power Dissipation A
PDSM
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Symbol
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: Jan 2011
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
31
52
12.5
20
1.9
2
1.2
1.3
-55 to 150
Typ Q1
29
56
3.3
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Typ Q2
27
51
2
Max Q1 Max Q2
35
32
67
61
4
2.4
W
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 11
AON6910A
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
Gate-Body leakage current
VGS(th)
ID(ON)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
On state drain current
VGS=10V, VDS=5V
85
VDS=0V, VGS= ±20V
100
21
VGS=4.5V, ID=9.1A
16
20
VDS=5V, ID=9.1A
30
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=9.1A
V
A
17.5
TJ=125°C
nA
2.4
14
gFS
Crss
1.8
11.5
Static Drain-Source On-Resistance
µA
5
VGS=10V, ID=9.1A
Output Capacitance
V
TJ=55°C
RDS(ON)
Units
1
Zero Gate Voltage Drain Current
Coss
Max
30
IDSS
IS
Typ
0.73
mΩ
mΩ
S
1
V
33
A
pF
400
510
670
150
220
310
pF
13
22
38
pF
0.9
1.8
2.7
Ω
5.9
7.4
9
nC
2.6
3.3
4.0
nC
1.2
1.5
1.8
nC
0.8
1.4
2
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=9.1A, dI/dt=500A/µs
7.2
9
11
Qrr
Body Diode Reverse Recovery Charge IF=9.1A, dI/dt=500A/µs
11.8
14.7
17.7
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
4.3
ns
8
ns
15.8
ns
3.4
ns
ns
nC
2
A. The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Jan 2011
www.aosmd.com
Page 2 of 11
AON6910A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
10V
VDS=5V
80
7V
6V
5V
40
ID(A)
4.5V
60
ID (A)
50
4V
40
20
30
3.5V
20
VGS=3V
10
0
125°C
25°C
0
0
1
2
3
4
5
0
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
4
5
6
Normalized On-Resistance
1.8
18
RDS(ON) (mΩ)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
20
16
VGS=4.5V
14
12
VGS=10V
10
VGS=10V
ID=9.1A
1.6
1.4
17
VGS=4.5V
5
ID=9.1A
2
1.2
10
1
0.8
8
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
0
Temperature (°C)
18
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
(Note E)
40
1.0E+02
35
1.0E+01
ID=9.1A
30
40
1.0E+00
25
125°C
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ)
1
20
15
25°C
1.0E-02
1.0E-03
10
1.0E-04
25°C
5
1.0E-05
3
5
7
9
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Jan 2011
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0.0
0.2
0.4
0.6
0.8 1.0 1.2 1.4 1.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 11
AON6910A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=15V
ID=9.1A
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
600
400
Coss
200
2
Crss
0
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
RDS(ON)
limited
10.0
160
10µs
100us
DC
1ms
1.0
Power (W)
100.0
ID (Amps)
0
8
120
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
TJ(Max)=150°C
TC=25°C
80
40
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=4°C/W
0.1
PD
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Jan 2011
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Page 4 of 11
AON6910A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
IAR (A) Peak Avalanche Current
35
TA=25°C
Power Dissipation (W)
30
TA=100°C
TA=125°C
TA=150°C
25
20
15
10
5
0
10.0
0.000001
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
40
35
TA=25°C
1000
30
Current rating ID(A)
150
Power (W)
25
20
15
10
17
5
2
10
100
10
5
0
0
25
50
75
100
125
150
1
0.00001
0.001
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.1
10
0
18
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=67°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Jan 2011
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Page 5 of 11
AON6910A
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=10mA, VGS=0V
VDS=30V, VGS=0V
IGSS
Gate-Body leakage current
VGS(th)
ID(ON)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
On state drain current
VGS=10V, VDS=5V
190
TJ=125°C
100
VDS=0V, VGS= ±12V
VGS=10V, ID=16A
TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
VGS=4.5V, ID=16A
VDS=5V, ID=16A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Units
V
0.5
Zero Gate Voltage Drain Current
RDS(ON)
Max
30
IDSS
IS
Typ
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
mA
100
nA
1.6
2
V
3.4
4.1
5.5
6.6
4
5
A
mΩ
mΩ
100
0.4
S
0.7
V
40
A
2730
3415
4100
pF
240
340
440
pF
140
232
325
pF
0.6
1.2
1.8
Ω
19
24
29
nC
VGS=10V, VDS=15V, ID=16A
6.6
nC
Qgd
Gate Drain Charge
10
nC
9
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
IF=16A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=16A, dI/dt=500A/µs
Qrr
VGS=10V, VDS=15V, RL=0.94Ω,
RGEN=3Ω
8
12
4.5
ns
47
ns
5.5
ns
10
15
12
18
ns
nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Jan 2011
www.aosmd.com
Page 6 of 11
AON6910A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
10V
80
80
4.5V
60
3V
ID(A)
ID (A)
60
40
40
VGS=2.5V
125°C
20
20
0
0
1
2
3
4
25°C
0
1.5
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3.0
Normalized On-Resistance
2
4.5
RDS(ON) (mΩ)
2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
5.0
VGS=4.5V
4.0
VGS=10V
3.5
3.0
1.8
VGS=10V
ID=16A
1.6
17
5
VGS=4.5V 2
10
ID16A
1.4
1.2
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
10
25
50
1.0E+02
ID=16A
1.0E+01
40
8
125°C
1.0E+00
IS (A)
RDS(ON) (mΩ)
2.0
125°C
6
25°C
1.0E-01
1.0E-02
1.0E-03
4
1.0E-04
25°C
2
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Jan 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 11
AON6910A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4500
VDS=15V
ID=16A
4000
Ciss
3500
Capacitance (pF)
VGS (Volts)
8
6
4
3000
2500
2000
1500
Crss
1000
2
Coss
500
0
0
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
60
1000.0
10µs
RDS(ON)
limited
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
100us
10.0
1ms
DC
1.0
160
Power (W)
ID (Amps)
10
30
200
100.0
0.0
0.01
10
1
TJ(Max)=150°C
TC=25°C
120
TJ(Max)=150°C
TC=25°C
0.1
ZθJC Normalized Transient
Thermal Resistance
5
80
40
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.4°C/W
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Jan 2011
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Page 8 of 11
AON6910A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=125°C
TA=150°C
50
40
30
20
10
0
10
0
1
10
100
1000
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
10000
90
TA=25°C
75
1000
60
Power (W)
Current rating ID(A)
25
45
30
17
5
2
10
100
10
15
0
0
25
50
75
100
125
150
1
0.00001
0.001
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.1
10
1000
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=61°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Jan 2011
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Page 9 of 11
AON6910A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.7
1.0E-02
0.6
VDS=30V
0.5
VSD (V)
IR (A)
1.0E-03
VDS=15V
1.0E-04
10A
0.4
5A
0.3
1.0E-05
IS=1A
0.2
0.1
0
50
100
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
12
25
di/dt=800A/µs
20
10
10
8
8
10
Irm
5
6
4
di/dt=800A/µs
5
4
4
25ºC
2
2
0
0
10
15
20
25
30
10
15
6
25ºC
Qrr
10
4
125ºC
0
200
400
600
800
0
1000
0
5
10
15
20
25
30
18
5
trr
Is=20A
4.5
4
125ºC
3.5
25ºC
3
9
2.5
2
25ºC
1.5
1
S
3
0.5
125ºC
0
0
di/dt (A/µs)
Figure 21: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Rev 0: Jan 2011
0.5
25ºC
12
2
Irm
0
1
6
25ºC
5
1.5
IS (A)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
trr (ns)
125ºC
2.5
125ºC
S
15
8
Irm (A)
Qrr (nC)
20
25ºC
2
0
Is=20A
3
trr
IS (A)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
25
3.5
125ºC
6
125ºC
0
0
trr (ns)
25ºC
Irm (A)
Qrr
50
75
100 125 150 175 200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
12
125ºC
15
25
S
0
S
1.0E-06
Qrr (nC)
20A
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200
400
600
0
1000
800
di/dt (A/µs)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 10 of 11
AON6910A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: Jan 2011
Vgs
Isd
L
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
www.aosmd.com
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