AOSMD AON6411

AON6411
20V P-Channel MOSFET
General Description
Product Summary
The AON6411 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS= -10V)
-20
-85A
RDS(ON) (at VGS= -10V)
< 2.1mΩ
RDS(ON) (at VGS =-4.5V)
< 2.5mΩ
RDS(ON) (at VGS =-2.5V)
< 3.6mΩ
VDS
100% UIS Tested
100% Rg Tested
DFN5X6
D
Top View
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
C
Avalanche energy L=0.1mH
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: Jan. 2012
A
EAS
245
mJ
156
Steady-State
Steady-State
W
62.5
7.3
RθJA
RθJC
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W
4.7
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
A
IAS
PDSM
Junction and Storage Temperature Range
A
-38
70
PD
TA=70°C
V
-47
IDSM
TA=70°C
±12
-67
-340
IDM
TA=25°C
Continuous Drain
Current
Units
V
-85
ID
TC=100°C
Maximum
-20
Typ
14
40
0.6
°C
Max
17
55
0.8
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6411
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-340
nA
-1.3
V
1.7
2.1
2.45
3
VGS=-4.5V, ID=-20A
2
2.5
mΩ
VGS=-2.5V, ID=-20A
2.8
3.6
mΩ
115
TJ=125°C
Forward Transconductance
VDS=-5V, ID=-20A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
A
-0.57
G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
µA
±100
gFS
IS
Units
-0.85
VGS=-10V, ID=-20A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=-10V, f=1MHz
mΩ
S
-1
V
-85
A
10290
pF
1910
pF
1395
pF
2.1
4.2
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
235
330
nC
Qg(4.5V) Total Gate Charge
100
140
nC
Qgs
Gate Source Charge
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-10V, ID=-20A
21
nC
Qgd
Gate Drain Charge
36
nC
tD(on)
Turn-On DelayTime
9
ns
tr
Turn-On Rise Time
VGS=-10V, VDS=-10V, RL=0.5Ω,
18
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
282
ns
tf
Turn-Off Fall Time
90
ns
ns
nC
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=500A/µs
48
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
178
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Jan. 2012
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Page 2 of 6
AON6411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
-2.5V
VDS=-5V
-2V
100
80
-4.5V
-10V
60
-ID(A)
-ID (A)
80
60
125°C
40
40
VGS=-1.5V
0
0
0
1
2
3
4
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
0
0.5
1
1.5
2
2.5
3
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
5
Normalized On-Resistance
1.8
4
RDS(ON) (mΩ
Ω)
25°C
20
20
VGS=-2.5V
3
VGS=-4.5V
2
1.6
VGS=-10V
ID=-20A
1.4
17
5
VGS=-4.5V
2
ID=-20A
10
1.2
1
VGS=-2.5V
ID=-20A
VGS=-10V
0.8
1
0
5
0
10
15
20
25
30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
6
ID=-20A
1.0E+01
5
40
1.0E+00
125°C
125°C
3
-IS (A)
RDS(ON) (mΩ
Ω)
4
1.0E-01
1.0E-02
25°C
2
1.0E-03
25°C
1
1.0E-04
1.0E-05
0
0
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Jan. 2012
2
4
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0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
18000
VDS=-10V
ID=-20A
16000
14000
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
12000
10000
8000
6000
Coss
4000
2
2000
0
Crss
0
0
50
100
150
200
250
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
RDS(ON)
limited
10µs
10µs 100µs
900
20
1ms
10ms
700
10.0
DC
TJ(Max)=150°C
TC=25°C
1.0
TJ(Max)=150°C
TC=25°C
800
Power (W)
-ID (Amps)
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
1000
1000.0
100.0
5
17
5
2
10
600
500
400
300
0.1
200
100
0.0
0
0.01
0.1
1
-VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
01
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=0.8°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Jan. 2012
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Page 4 of 6
AON6411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
TA=25°C
100
TA=100°C
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
1000
TA=150°C
TA=125°C
10
150
100
1
50
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
100
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
10000
TA=25°C
1000
Power (W)
Current rating ID(A)
80
60
40
17
5
2
10
100
10
20
1
0
0.0001
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.01
1
100
10000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Jan. 2012
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Page 5 of 6
AON6411
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 0: Jan. 2012
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 6 of 6