AOSMD AON6290

AON6290
100V N-Channel MOSFET
General Description
Product Summary
VDS
The AON6290 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
100V
85A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 4.6mΩ
RDS(ON) (at VGS=6V)
< 6.2mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: July 2012
IAS
60
A
EAS
180
mJ
208
Steady-State
Steady-State
W
83
7.3
RθJA
RθJC
W
4.7
TJ, TSTG
Symbol
t ≤ 10s
A
23
PDSM
TA=70°C
A
28
PD
TC=100°C
V
260
IDSM
TA=70°C
±20
67
IDM
TA=25°C
Continuous Drain
Current
Units
V
85
ID
TC=100°C
Maximum
100
-55 to 150
Typ
14
40
0.3
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°C
Max
17
55
0.6
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6290
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
2.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
260
TJ=55°C
±100
nA
2.8
3.4
V
3.8
4.6
6.5
7.9
VGS=6V, ID=20A
4.7
6.2
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
70
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Units
µA
5
VGS=10V, ID=20A
Coss
Max
V
VDS=100V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=50V, f=1MHz
0.3
mΩ
S
1
V
85
A
4600
pF
415
pF
27
VGS=0V, VDS=0V, f=1MHz
mΩ
0.75
pF
1.2
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
63
90
nC
Qg(4.5V) Total Gate Charge
28.5
40
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=50V, ID=20A
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
17
nC
10
nC
14.5
ns
5.5
ns
37
ns
tf
Turn-Off Fall Time
7.5
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
40
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
230
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: July 2012
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Page 2 of 6
AON6290
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
5V
100
VDS=5V
6V
80
4.5V
80
ID(A)
ID (A)
60
60
40
125°C
40
20
20
VGS=4.0V
25°C
0
0
0
1
2
3
4
1
5
8
3
4
5
6
Normalized On-Resistance
2
6
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=6V
4
VGS=10V
2
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
=6V
1.4
1.2
VGS
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
12
1.0E+02
ID=20A
1.0E+01
10
40
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
8
6
4
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
25°C
2
1.0E-04
0
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: July 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6290
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
VDS=50V
ID=20A
Capacitance (pF)
VGS (Volts)
6
4
2
4000
3000
Coss
2000
1000
0
10
20
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
70
0
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
100
10.0
DC
100µs
1ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
800
10µs
10µs
RDS(ON)
limited
Power (W)
100.0
17
5
2
10
600
400
200
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
1
0
10
100
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
20
1000
1000.0
ID (Amps)
Crss
0
0
Zθ JC Normalized Transient
Thermal Resistance
Ciss
5000
8
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.6°C/W
1
0.1
Single Pulse
PD
Ton
T
0.01
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: July 2012
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Page 4 of 6
AON6290
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
TA=25°C
TA=100°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
100
TA=150°C
TA=125°C
10
200
150
100
50
1
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
10000
100
TA=25°C
80
1000
Power (W)
Current rating ID(A)
250
60
40
17
5
2
10
100
10
20
1
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.01
0.1
1
10 0 100
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.0001 0.001
150
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
40
RθJA=55°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: July 2012
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Page 5 of 6
AON6290
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: July 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6