AOSMD AOI4130

AOD4130/AOI4130
60V N-Channel MOSFET
General Description
Product Summary
The AOD4130/AOI4130 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
VDS
60V
30A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 24mΩ
RDS(ON) (at VGS=4.5V)
< 30mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
TopView
Top View
Bottom View
TO-251A
IPAK
D
D
S
D
D
G
G
Gate-Source Voltage
S
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
IAS, IAR
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 1: June 2011
Steady-State
Steady-State
A
A
27
A
36.5
mJ
52
W
25
2.5
RθJA
RθJC
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
V
5
PDSM
TA=70°C
±20
6.5
PD
TC=100°C
Units
V
74
IDSM
TA=70°C
Maximum
60
20
IDM
TA=25°C
S
D
30
ID
TC=100°C
G
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Continuous Drain
Current
G
S
S
G
D
Bottom View
-55 to 175
Typ
12.4
34
2.4
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°C
Max
20
50
2.9
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD4130/AOI4130
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Max
60
1
TJ=55°C
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=5V, ID=250µA
1.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
74
Units
V
VDS=60V, VGS=0V
VGS(th)
100
nA
2.2
2.8
V
19.5
24
37.5
45
VGS=4.5V, ID=20A
24
30
mΩ
55
1
V
46
A
VGS=10V, ID=20A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
A
0.76
mΩ
S
1265
1582
1900
pF
VGS=0V, VDS=30V, f=1MHz
70
100
130
pF
40
67
95
pF
VGS=0V, VDS=0V, f=1MHz
1.8
3.6
5.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
23
28.3
34
nC
Qg(4.5V) Total Gate Charge
11
13.4
16
nC
3.6
4.5
5.4
nC
4.3
7.2
10
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=30V, ID=20A
7.5
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
ns
6.5
ns
33
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
15
7.5
22
30
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
53
76
100
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: June 2011
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Page 2 of 6
AOD4130/AOI4130
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
10V
VDS=5V
6V
40
60
ID(A)
60
ID (A)
4.5V
4V
40
125°C
20
20
25°C
VGS=3.5V
0
0
0
1
2
3
4
0
5
1
30
Normalized On-Resistance
VGS=4.5V
RDS(ON) (mΩ )
3
4
5
6
2.8
25
20
VGS=10V
15
10
2.4
VGS=10V
ID=20A
2
17
5
2
10
1.6
VGS=4.5V
ID=20A
1.2
0.8
0
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
60
1.0E+02
ID=20A
1.0E+01
50
40
125°C
1.0E+00
40
IS (A)
RDS(ON) (mΩ )
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
30
20
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
25°C
1.0E-04
10
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: June 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD4130/AOI4130
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
VDS=30V
ID=20A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1500
1000
Coss
500
2
Crss
0
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
30
10
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
60
500
1000.0
10µs
100.0
TJ(Max)=175°C
TC=25°C
400
RDS(ON)
limited
10.0
100µs
1ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
Power (W)
ID (Amps)
10µs
17
5
2
10
300
200
100
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=2.9°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: June 2011
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Page 4 of 6
AOD4130/AOI4130
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
IAR (A) Peak Avalanche Current
TA=25°C
Power Dissipation (W)
50
TA=100°C
TA=150°C
TA=125°C
40
30
20
10
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
25
50
75
100
150
175
10000
35
TA=25°C
30
1000
25
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
20
15
17
5
2
10
100
10
10
5
1
0.00001
0
0
25
50
75
100
125
150
0.001
0.1
10
1000
0
18
175
TCASE (°C)
Figure 14: Current De-rating (Note F)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: June 2011
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Page 5 of 6
AOD4130/AOI4130
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: June 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6