Datasheet

AON7784
30V N-Channel MOSFET
SRFET
General Description
TM
Product Summary
SRFETTM AON7784 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
VDS
30V
50A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 3.5mΩ
RDS(ON) (at VGS = 4.5V)
< 4mΩ
100% UIS Tested
100% Rg Tested
DFN 3.3x3.3
Top View
Bottom View
D
Top View
1
8
2
7
3
6
4
5
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 1 : Mar. 2011
IAS, IAR
34
A
EAS, EAR
58
mJ
83
Steady-State
Steady-State
W
33
6.2
RθJA
RθJC
www.aosmd.com
W
4
TJ, TSTG
Symbol
t ≤ 10s
A
25
PDSM
TA=70°C
A
31
PD
TC=100°C
V
265
IDSM
TA=70°C
±12
39
IDM
TA=25°C
Continuous Drain
Current
Units
V
50
ID
TC=100°C
Maximum
30
-55 to 150
Typ
16
45
1.1
°C
Max
20
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON7784
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=10mA, VGS=0V
0.5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
265
TJ=125°C
100
100
VGS=10V, ID=20A
5.5
VGS=4.5V, ID=20A
3.2
4
VDS=5V, ID=20A
110
S
0.4
V
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
V
A
4.3
gFS
Rg
2.1
nA
3.5
Static Drain-Source On-Resistance
Output Capacitance
1.6
mA
2.8
RDS(ON)
Reverse Transfer Capacitance
Units
V
VDS=30V, VGS=0V
Zero Gate Voltage Drain Current
Coss
Max
30
IDSS
Crss
Typ
mΩ
mΩ
50
A
3000
3800
4600
pF
280
400
520
pF
150
260
370
pF
0.3
0.6
0.9
Ω
22
28
34
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
nC
8
nC
9
nC
10
ns
6
ns
55
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
8
11
14
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
13
17
21
6
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Mar. 2011
www.aosmd.com
Page 2 of 7
AON7784
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
10V
80
80
4.5V
60
ID(A)
ID (A)
60
3V
40
40
125°C
VGS=2.5V
20
20
25°C
0
0
0
1
2
3
4
1.5
5
2.5
3
3.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4.0
Normalized On-Resistance
2
3.6
RDS(ON) (mΩ )
2
VGS=4.5V
3.2
2.8
VGS=10V
2.4
1.8
VGS=4.5V
ID=20A
1.6
1.4
VGS=10V
ID=20A
1.2
17
5
2
10
1
0.8
2.0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
9
1.0E+02
ID=20A
1.0E+01
40
125°C
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ )
6
3
1.0E-01
25°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Mar. 2011
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON7784
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
VDS=15V
ID=20A
4500
Ciss
4000
Capacitance (pF)
VGS (Volts)
8
6
4
2
3500
3000
2500
2000
1500
Crss
1000
Coss
500
0
0
0
10
20
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
70
0
1000.0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
400
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
10.0
1.0
350
10µs
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
300
Power (W)
100.0
ID (Amps)
5
250
17
5
2
10
200
150
100
0.1
50
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Mar. 2011
www.aosmd.com
Page 4 of 7
AON7784
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90
80
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
TA=100°C
100
TA=150°C
TA=125°C
70
60
50
40
30
20
10
10
0
1
10
100
1000
µs)
Time in avalanche, tA (µ
Figure 12: Single Pulse Avalanche capability (Note
C)
0
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
60
TA=25°C
50
1000
40
Power (W)
Current rating ID(A)
150
30
20
17
5
2
10
100
10
10
1
0.00001
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10
1000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
0.01
PD
Single Pulse
0.001
Ton
T
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: Mar. 2011
www.aosmd.com
Page 5 of 7
AON7784
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.7
0.6
1.0E-02
20A
10A
0.5
VDS=30V
0.4
VSD (V)
IR (A)
1.0E-03
VDS=15V
1.0E-04
5A
0.3
IS=1A
0.2
1.0E-05
0.1
0
0
50
100
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
30
12
3
di/dt=800A/µs
10
6
125ºC
10
trr (ns)
25ºC
Qrr
4
25ºC
0
0
5
10
15
20
25
2
0
0
30
25ºC
0
5
trr
trr (ns)
4
25ºC
2
0
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 1: Mar. 2011
25
Is=20A
30
4.5
4
125ºC
3.5
3
25ºC
2.5
9
2
25ºC
6
0
20
5
15
Irm (A)
Qrr (nC)
125ºC
Irm
15
12
6
Qrr
5
10
18
8
25ºC
10
0.5
IS (A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
10
15
1
S
0
Is=20A
125ºC
2
1.5
IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
20
25ºC
125ºC
2
25
2.5
6
4
Irm
5
trr
8
Irm (A)
Qrr (nC)
8
15
125ºC
10
125ºC
20
100
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
12
di/dt=800A/µs
25
50
1.5
1
S
3
S
0
S
1.0E-06
125º
0.5
0
0
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
www.aosmd.com
Page 6 of 7
AON7784
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: Mar. 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 7 of 7