AOT280L/AOB280L

AOT280L/AOB280L
80V N-Channel MOSFET
General Description
Product Summary
The AOT280L/AOB280L uses Trench MOSFET
VDS
technology that is uniquely optimized to provide the most
ID (at VGS=10V)
80V
140A
efficient high frequency switching performance. Both
RDS(ON) (at VGS=10V)
< 2.7mΩ (< 2.2mΩ∗)
conduction and switching power losses are minimized
RDS(ON) (at VGS=6V)
< 3.5mΩ (< 3.1mΩ∗)
due to an extremely low combination of RDS(ON), Ciss and
Coss. This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
100% UIS Tested
100% Rg Tested
AOT280L
AOB280L
D
TO-263
TO220
Top View
Bottom View
Top View
D
Bottom View
D
D
D
G
G
D
S
D
S
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.3mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
V
A
A
IAS
70
A
EAS
735
mJ
333
W
166.5
2.1
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
±20
16
PDSM
TA=70°C
Units
V
20.5
PD
TC=100°C
Maximum
80
560
IDSM
TA=70°C
S
110
IDM
TA=25°C
Continuous Drain
Current
S
G
140
ID
TC=100°C
S
-55 to 175
Typ
12
48
0.35
°C
Max
15
60
0.45
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
Rev.2.0: June 2013
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Page 1 of 6
AOT280L/AOB280L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
IGSS
VGS(th)
ID(ON)
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
VDS=0V, VGS=±20V
VDS=VGS，ID=250µA
2.4
VGS=10V, VDS=5V
560
±100
2.5
3.5
mΩ
VGS=10V, ID=20A
TO263
1.8
2.2
mΩ
VGS=6V, ID=20A
TO263
2.2
3.1
mΩ
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
mΩ
76
0.67
G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
V
A
4.2
Forward Transconductance
Rg
nA
3.4
3.4
gFS
Reverse Transfer Capacitance
2.75
2.7
VSD
Crss
µA
2.2
TO220
VGS=6V, ID=20A
TO220
Output Capacitance
V
5
Gate Threshold Voltage
On state drain current
Coss
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
80
VDS=80V, VGS=0V
VGS=10V, ID=20A
RDS(ON)
Typ
S
1
V
140
A
11135
VGS=0V, VDS=40V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
VGS=10V, VDS=40V, ID=20A
Qgs
Qgd
Gate Source Charge
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
0.4
pF
1315
pF
80
pF
0.75
1.2
160
224
Ω
nC
nC
38
28
30
nC
ns
23
ns
75
ns
27
ns
IF=20A, dI/dt=500A/µs
44
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
348
ns
nC
VGS=10V, VDS=40V, RL=2Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: June 2013
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Page 2 of 6
AOT280L/AOB280L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
10V
80
80
6V
4.5V
60
ID(A)
ID (A)
60
40
40
125°C
20
VGS=4V
20
25°C
0
0
0
1
2
3
4
1
5
5
3
4
5
Normalized On-Resistance
2
4
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=6V
3
2
VGS=10V
1
1.8
VGS=10V
ID=20A
1.6
17
5
2
VGS=6V
I =20A10
1.4
1.2
D
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
6
1.0E+02
ID=20A
1.0E+01
5
40
125°C
1.0E+00
IS (A)
RDS(ON) (mΩ
Ω)
4
3
2
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
25°C
1
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: June 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT280L/AOB280L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15000
VDS=40V
ID=20A
Ciss
12000
Capacitance (pF)
VGS (Volts)
8
6
4
2
9000
6000
3000
Coss
Crss
0
0
0
30
60
90
120
150
180
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
20
30
40
50
60
70
VDS (Volts)
Figure 8: Capacitance Characteristics
1200
1000.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
1000
10µs
100µs
DC
1ms
10ms
10.0
Power (W)
ID (Amps)
100.0
80
1.0
TJ(Max)=175°C
TC=25°C
0.1
800
17
5
2
10
600
400
200
0.0
0.01
0.1
1
10
100
0
0.0001
1000
0.001
0.01
0.1
1
10
0
VDS (Volts)
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
VGS > or equal to 6V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=0.45°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: June 2013
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Page 4 of 6
AOT280L/AOB280L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
350
300
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
TA=150°C
100
TA=125°C
250
200
150
100
50
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
1000
TA=25°C
100
Power (W)
Current rating ID(A)
120
90
60
17
5
2
10
10
30
0
0
25
50
75
100
125
150
1
0.001
175
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
1
0.01
0.1
1
10
0100
1000
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: June 2013
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Page 5 of 6
AOT280L/AOB280L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.2.0: June 2013
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6