AP2344GEN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive D ▼ Lower Gate Charge ▼ Fast Switching Performance BVDSS 20V RDS(ON) 23mΩ ID 6.2A S ▼ RoHS Compliant & Halogen-Free SOT-23 G D Description AP2344 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G S Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V +8 V 3 6.2 A 3 5 A 20 A 1.38 W Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 ℃/W 1 201209241 AP2344GEN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 20 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A - 18.4 23 mΩ VGS=2.5V, ID=4A - 20.7 27 mΩ VGS=1.8V, ID=2A - 25.3 36 mΩ 0.3 0.5 1 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=6A - 24 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +30 uA Qg Total Gate Charge ID=6A - 15 24 nC Qgs Gate-Source Charge VDS=10V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC td(on) Turn-on Delay Time VDS=10V - 5 - ns tr Rise Time ID=1A - 21 - ns td(off) Turn-off Delay Time RG=3.3Ω - 28 - ns tf Fall Time VGS=5V - 19 - ns Ciss Input Capacitance VGS=0V - 1060 1700 pF Coss Output Capacitance VDS=10V - 130 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF Rg Gate Resistance f=1.0MHz - 1.5 3 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=6A, VGS=0V, - 11 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 4 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10sec ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2344GEN-HF 30 30 20 ID , Drain Current (A) ID , Drain Current (A) T A = 150 o C 5.0V 4.5V 3.5V 2.5V V G =1.8V T A = 25 o C 10 0 5.0V 4.5V 3.5V 2.5V V G =1.8V 20 10 0 0 1 2 0 3 1 2 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 26 2 I D =6A V G =4.5V I D =2A T A =25 o C 1.8 24 Normalized RDS(ON) RDSON (mΩ) 1.6 22 20 1.4 1.2 1 0.8 18 0.6 0.4 16 1 2 3 4 5 -50 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 2 I D =250uA IS(A) Normalized VGS(th) 6 4 T j =150 o C T j =25 o C 2 1.5 1 0.5 0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2344GEN-HF f=1.0MHz 2000 I D =6A V DS =10V 5 1600 4 C (pF) VGS , Gate to Source Voltage (V) 6 3 1200 C iss 800 2 400 1 C oss C rss 0 0 0 4 8 12 16 1 20 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 ID (A) 10 Operation in this area limited by RDS(ON) Normalized Thermal Response (Rthja) Duty factor=0.5 100us 1ms 1 10ms 100ms 0.1 o T A =25 C Single Pulse 1s DC 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 270℃/W 0.001 0.01 0.01 0.1 1 10 0.0001 100 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 10 V DS =5V 8 ID , Drain Current (A) ID , Drain Current (A) 16 12 8 o T j =150 C T j =25 o C 4 6 4 2 T j = -40 o C 0 0 0 0.4 0.8 1.2 1.6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 2 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 4