AP9992AGP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Lower Gate Charge
▼ RoHS Compliant & Halogen-Free
BVDSS
60V
RDS(ON)
3.5mΩ
ID
G
161A
S
Description
AP9992A
seriesPower
are from
Advanced
Power
design and silicon
The Advanced
MOSFETs
from
APECinnovated
provide the
process
technology
to
achieve
the
lowest
possible
on-resistance
and fast
designer with the best combination of fast switching,
switching
performance.
It
provides
the
designer
with
an
extreme
efficient
ruggedized device design, low on-resistance and cost-effectiveness.
device for use in a wide range of power applications
The TO-220 package is widely preferred for all commercial-industrial G
D
through hole applications. The low thermal resistance and low package
S
cost contribute to the worldwide popular package.
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current (Chip)
161
A
120
A
102
A
300
A
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
166
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.75
℃/W
62
℃/W
1
201205111
AP9992AGP-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=40A
-
-
3.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
80
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
92
147
nC
Qgs
Gate-Source Charge
VDS=48V
-
20
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
39
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
23
-
ns
tr
Rise Time
ID=40A
-
82
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
47
-
ns
tf
Fall Time
VGS=10V
-
83
-
ns
Ciss
Input Capacitance
VGS=0V
-
5500 8800
pF
Coss
Output Capacitance
VDS=25V
-
870
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
350
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
4
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
60
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
120
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9992AGP-HF
300
160
ID , Drain Current (A)
250
ID , Drain Current (A)
T C =150 o C
10V
8.0V
7.0V
o
T C =25 C
6.0V
200
150
V G = 5.0V
100
10V
8.0V
7.0V
6.0V
V G =5.0V
120
80
40
50
0
0
0
4
8
12
16
20
24
0
2
Fig 1. Typical Output Characteristics
6
8
10
12
Fig 2. Typical Output Characteristics
2.0
1.2
I D =40A
V G =10V
Normalized RDS(ON)
I D =1mA
Normalized BVDSS (V)
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1.1
1
1.6
1.2
0.8
0.9
0.4
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Temperature
2.0
40
I D =250uA
1.6
T j =150 o C
Normalized VGS(th)
IS(A)
30
T j =25 o C
20
1.2
0.8
10
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9992AGP-HF
f=1.0MHz
12
8000
I D =40A
V DS =48V
6000
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
4000
4
2000
C oss
C rss
2
0
0
0
40
80
1
120
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Operation in this area
limited by RDS(ON)
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100us
ID (A)
100
1ms
10
10ms
100m
s
DC
T C =25 o C
Single Pulse
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.01
0.1
1
10
100
0.00001
1000
0.0001
0.001
V DS ,Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
200
180
V DS =5V
150
ID , Drain Current (A)
ID , Drain Current (A)
160
120
80
T j =150 o C
T j =25 o C
Limited by package
120
90
60
40
30
T j =-40 o C
0
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
10
25
50
75
100
125
150
T C , Case Temperature ( o C )
Fig 12. Maximum Continuous Drain
Current v.s. Case Temperature
4