ASF250 5-1000 MHz MMIC Amplifier Features Description ·16.9 dB Gain at 150 MHz The ASF250, a IF gain block amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 1 GHz. It has an active bias network for stable current over temperature and process variation. The amplifier is available in an SOT-89 package and passes through the stringent DC, RF, and reliability tests ·22 dBm P1dB at 150 MHz ·43.5 dBm Output IP3 at 150 MHz ·2.5 dB NF at 150 MHz ·MTTF > 100 Years ·Single Supply ·Minimal External Components Typical Performance Parameters Frequency Units Typical 900 150 ·50 ~ 1000 MHz (5 V) 16.6 16.1 16.8 ·50 ~ 1000 MHz (4.5 V, 90 mA) -20 -14.5 -20 -20 -19 -16 -20 43.51) 43.51) 40.51) 38.51) 41.52) 2.5 2.7 2.7 2.7 2.4 22 22 21 103 103 90 5 4.5 70 150 300 450 Gain dB 17.0 16.9 16.7 S11 dB -15 -20 -20 S22 dB -18 -20 dBm 40.01) Noise Figure dB 2.5 Output P1dB dBm 22 22 22 Current mA 103 103 103 V 5 5 5 5 Device Voltage Package Style: SOT-89 Application Circuit MHz Output IP3 ASF250 ·50 ~ 1000 MHz (6 V) 1) OIP3 is measured with two tones at an output power of +10dBm/tone separated by 1 MHz 2) OIP3 is measured with two tones at an output power of +9dBm/tone separated by 1 MHz. Product Specifications Parameters Units Testing Frequency Min Typ MHz 150 Gain dB 16.9 S11 dB -20 S22 dB -20 Output IP3 dBm 43.5 Noise Figure dB 2.5 Output P1dB dBm 22 Current mA 103 V 5 Device Voltage Max Pin Configuration Absolute Maximum Ratings Parameters Rating Operating Case Temperature -40 to +85°C Storage Temperature -40 to +150°C Device Voltage +6 V Operating Junction Temperature +150°C Input RF Power (Continuous) 20 dBm * Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/5 ASB Inc. · [email protected] · Tel: +82-42-528-7223 Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias October 2012 ASF250 5-1000 MHz MMIC Amplifier Outline Drawing Part No. Lot No. Symbols A L b b1 C D D1 E E1 e1 H S e ASF250 Pxxxx Dimensions (In mm) MIN NOM MAX 1.40 1.50 1.60 0.89 1.04 1.20 0.36 0.42 0.48 0.41 0.47 0.53 0.38 0.40 0.43 4.40 4.50 4.60 1.40 1.60 1.75 3.64 --4.25 2.40 2.50 2.60 2.90 3.00 3.10 0.35 0.40 0.45 0.65 0.75 0.85 1.40 1.50 1.60 Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias Mounting Recommendation (in mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1C Voltage Level:1900 V MM Class B Voltage Level: 225V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260°C reflow 2/5 ASB Inc. · [email protected] · Tel: +82-42-528-7223 October 2012 ASF250 5-1000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT 50 ~ 1000 +5 V 70 150 300 450 900 Magnitude S21 (dB) 17.0 16.9 16.7 16.6 16.1 Magnitude S11 (dB) -15 -20 -20 -20 -14.5 Magnitude S22 (dB) -18 -20 -20 -19 -16 Output P1dB (dBm) 22 22 22 22 22 Output IP31) (dBm) 40.0 43.5 43.5 40.5 38.5 Noise Figure (dB) 2.5 2.5 2.7 2.7 2.7 Device Voltage (V) Device Current (mA) 5 5 5 5 5 103 103 103 103 103 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Vs=5 V Schematic C4=1 mF C3=100 pF L1=330 nH C1=1 mF RF IN C2=1 mF RF OUT ASF250 S-parameters & K-factor 0 25 -5 20 S11 (dB) Gain (dB) -10 15 10 -15 -20 5 0 -25 -30 0 200 400 600 800 1000 0 200 400 600 800 1000 Frequency (MHz) Frequency (MHz) 0 -5 S22 (dB) -10 -15 -20 -25 0 200 400 600 800 1000 Frequency (MHz) 3/5 ASB Inc. · [email protected] · Tel: +82-42-528-7223 October 2012 ASF250 Frequency (MHz) APPLICATION CIRCUIT 50 ~ 1000 70 150 300 450 900 Magnitude S21 (dB) 17.0 16.8 16.7 16.5 16.0 Magnitude S11 (dB) -15 -20 -20 -20 -14.5 Magnitude S22 (dB) -17.5 -20 -20 -20 -15.5 Output P1dB (dBm) 21 21 21 21 21 Output IP3 (dBm) 39.0 41.5 42.0 39.0 36.5 Noise Figure (dB) 2.4 2.4 2.6 2.6 2.6 Device Voltage (V) 4.5 4.5 4.5 4.5 4.5 Device Current (mA) 90 90 90 90 90 1) +4.5 V, 90 mA 5-1000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vs=5 V R1=5.6 W C4=1 mF C3=100 pF L1=330 nH C1=1 mF RF IN C2=1 mF RF OUT ASF250 25 0 20 -5 15 -10 S11 (dB) Gain (dB) S-parameters & K-factor 10 -20 5 0 -15 -25 0 200 400 600 800 1000 0 200 400 600 800 1000 Frequency (MHz) Frequency (MHz) 0 -5 S22 (dB) -10 -15 -20 -25 -30 0 200 400 600 800 1000 Frequency (MHz) 4/5 ASB Inc. · [email protected] · Tel: +82-42-528-7223 October 2012 ASF250 Frequency (MHz) APPLICATION CIRCUIT 50 ~ 1000 150 300 450 900 Magnitude S21 (dB) 17.5 17.2 17.1 17.0 16.4 Magnitude S11 (dB) -15 -20 -20 -18 -10 Magnitude S22 (dB) -17 -20 -18 -15 -10 Output P1dB (dBm) 23.5 24 24 24 24 Output IP3 (dBm) 39.5 42.5 42.5 40.0 38.0 Noise Figure (dB) 2.6 2.6 2.8 2.8 2.8 Device Voltage (V) 6 6 6 6 6 115 115 115 115 115 1) +6 V 5-1000 MHz MMIC Amplifier 70 Device Current (mA) 1) OIP3 is measured with two tones at an output power of +9dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vs=6 V C4=1 mF C3=100 pF L1=330 nH C1=1 mF RF IN C2=1 mF RF OUT ASF250 S-parameters & K-factor 25 0 -5 -10 15 S11 (dB) Gain (dB) 20 10 -15 -20 5 0 -25 0 250 500 750 1000 -30 0 Frequency (MHz) 250 500 750 1000 Frequency (MHz) 0 -5 S22 (dB) -10 -15 -20 -25 0 250 500 750 1000 Frequency (MHz) 5/5 ASB Inc. · [email protected] · Tel: +82-42-528-7223 October 2012