SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for use in output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD895 - BD897 - BD899 - BD901 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current PT Power Dissipation TJ Junction Temperature Ts Storage Temperature range 25/09/2012 Value BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 Tc = 25° Ta = 25° COMSET SEMICONDUCTORS -45 -60 -80 -100 -45 -60 -80 -100 Unit V V -5 V -8 A -300 mA 70 2 150 -65 to +150 Watts °C 1|4 SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO Ratings Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current Test Condition(s) IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=25°C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=100° C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0, VCE = - 30 V IE= 0, VCE = - 30 V IE= 0, VCE = - 40 V IE= 0, VCE = - 50 V VEB= -5 V, IC= 0 VCEO Collector-Emitter Breakdown Voltage (*) VCE(SAT) Collector-Emitter I = -3 A, IB= -12 mA saturation Voltage (*) C 25/09/2012 IC= -100 mA, IB= 0 Min Typ Max Unit - - -0.2 mA - - -2 mA - - -0.5 mA - - -2 mA -45 -60 -80 -100 - - V - - -2.5 V BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 COMSET SEMICONDUCTORS 2|4 SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VBE(on) Base-Emitter Voltage IC= -3 A, VCE= -3 V (*) hFE DC Current Gain (*) VCE= -3.0 V IC= -3 A VECF C-E Diode Forward Voltage IE= -8 A BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 Min Typ Max Unit - - -2.5 V 750 - - - - - -3.5 V Min Typ Max Unit - 1 5 - µs SWITCHING TIMES Symbol Ratings turn-on time turn-off time ton toff Test Condition(s) IC= -3 A, VBE(off) = 3.5 V IBon = -IBoff = -12 mA, RL = 10 Ω (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance Junction To Case 1.79 °C/W RthJ-A Thermal Resistance Junction To Free Air 62.5 °C/W 25/09/2012 COMSET SEMICONDUCTORS 3|4 SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Package Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Base Collector Emitter Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 25/09/2012 [email protected] COMSET SEMICONDUCTORS 4|4