COMSET BD902

SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are intended for use in output stages in audio equipment, general amplifiers,
and analogue switching application.
NPN complements are BD895 - BD897 - BD899 - BD901
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
Base Current
PT
Power Dissipation
TJ
Junction Temperature
Ts
Storage Temperature range
25/09/2012
Value
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
Tc = 25°
Ta = 25°
COMSET SEMICONDUCTORS
-45
-60
-80
-100
-45
-60
-80
-100
Unit
V
V
-5
V
-8
A
-300
mA
70
2
150
-65 to +150
Watts
°C
1|4
SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
Ratings
Collector Cutoff
Current
ICEO
Collector Cutoff
Current
IEBO
Emitter Cutoff
Current
Test Condition(s)
IE= 0
VCB = -45 V
IE= 0
VCB = -60 V
TC=25°C
IE= 0
VCB = -80 V
IE= 0
VCB = -100 V
IE= 0
VCB = -45 V
IE= 0
VCB = -60 V
TC=100°
C
IE= 0
VCB = -80 V
IE= 0
VCB = -100 V
IE= 0, VCE = - 30 V
IE= 0, VCE = - 30 V
IE= 0, VCE = - 40 V
IE= 0, VCE = - 50 V
VEB= -5 V, IC= 0
VCEO
Collector-Emitter
Breakdown Voltage
(*)
VCE(SAT)
Collector-Emitter
I = -3 A, IB= -12 mA
saturation Voltage (*) C
25/09/2012
IC= -100 mA, IB= 0
Min
Typ
Max
Unit
-
-
-0.2
mA
-
-
-2
mA
-
-
-0.5
mA
-
-
-2
mA
-45
-60
-80
-100
-
-
V
-
-
-2.5
V
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
COMSET SEMICONDUCTORS
2|4
SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VBE(on)
Base-Emitter Voltage
IC= -3 A, VCE= -3 V
(*)
hFE
DC Current Gain (*)
VCE= -3.0 V
IC= -3 A
VECF
C-E Diode Forward
Voltage
IE= -8 A
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
Min
Typ
Max
Unit
-
-
-2.5
V
750
-
-
-
-
-
-3.5
V
Min
Typ
Max
Unit
-
1
5
-
µs
SWITCHING TIMES
Symbol
Ratings
turn-on time
turn-off time
ton
toff
Test Condition(s)
IC= -3 A, VBE(off) = 3.5 V
IBon = -IBoff = -12 mA, RL = 10 Ω
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-C
Thermal Resistance Junction To Case
1.79
°C/W
RthJ-A
Thermal Resistance Junction To Free Air
62.5
°C/W
25/09/2012
COMSET SEMICONDUCTORS
3|4
SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
0,46
2,50
4,98
2.49
0,70
Pin 1 :
Pin 2 :
Pin 3 :
Package
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
25/09/2012
[email protected]
COMSET SEMICONDUCTORS
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