BDV67-A-B-C-D NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV66-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IB Base Current IC Collector Current ICM 26/09/2012 Value BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D COMSET SEMICONDUCTORS Unit 60 80 100 120 150 80 100 120 140 160 V V 5.0 V 0.5 A 16 A 20 1/5 BDV67-A-B-C-D ABSOLUTE MAXIMUM RATINGS Symbol Ratings PT Power Dissipation TJ Junction Temperature TS @ Tmb = 25° C Storage Temperature BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D Value Unit 200 W 150 °C -65 to +150 THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings Thermal Resistance, Junction to Mounting Base Value Unit 0.625 °C / W SWITCHING TIMES Symbol ton toff 26/09/2012 Ratings turn-on time turn-off time Test Condition(s) IC= 10 A , VCC= 12 V IB1 = -IB2 = 40 mA COMSET SEMICONDUCTORS Min Typ Max Unit - 1 3.5 - µs 2/5 BDV67-A-B-C-D ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICEO Collector Cutoff Current VCE= 30 V, IB= 0 VCE= 40 V, IB= 0 VCE= 50 V, IB= 0 VCE= 60 V, IB= 0 VCE= 75 V, IB= 0 IEBO Emitter Cutoff Current VBE= 5 V, Ic= 0 Collector-Base Cutoff Current VCB= 80 V VCB= 100 V IB= 0 VCB= 120 V Tj=25°C VCB= 140 V VCB= 160 V VCB= 40 V VCB= 50 V IB= 0 Tj=150° VCB= 60 V C VCB= 70 V VCB= 80 V ICBO VCEO Collector-emitter I = 30 mA, IB= 0 Breakdown Voltage (*) C VCE= 3 V, IC= 1 A hFE VCE= 3 V, IC= 10 A DC Current Gain (*) VCE= 3 V, IC= 16 A VCE(SAT) 26/09/2012 Collector-Emitter saturation Voltage (*) IC= 10 A, IB= 40 mA BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D COMSET SEMICONDUCTORS Min Typ - Mx Unit 1 mA 5.0 mA 60 80 100 120 150 - 3000 - 1000 - - - 1000 - - - 2 1 mA 4 V - V 3/5 BDV67-A-B-C-D ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VBE Base-Emitter Voltage (*) VCE= 3 V, IC= 10 A VF Diode forward voltage IF= 10 A Cc Collector capacitance IE= 0 A, VCB= 10 V f= 1 MHz BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D Min Typ Max Unit - - 2,5 V - - 3 V - 300 - pF (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 26/09/2012 COMSET SEMICONDUCTORS 4/5 BDV67-A-B-C-D MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package DIMENSIONS (mm) Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : Package Max. 15.20 1.90 4.60 3.10 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 0.35 5.35 20.00 19.60 0.95 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 4.80 Base Collector Emitter Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 26/09/2012 [email protected] COMSET SEMICONDUCTORS 5/5