SEMICONDUCTORS BUZ74 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in switched mode power supplies, motor control, welding, DC-DC & DC-AC converters, and in general purpose switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VDS IDS IDM IAR EAS EAR VGS RDS(on) PT tJ tstg Ratings Value Unit Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Single pulse ID = 2.4 A, VDD = 50 V, RGS = 25 Ω, L= 56.3 µH, Tj = 25°C Avalanche Energy, Periodic Limited by Tjmax Gate-Source Voltage Drain-Source on Resistance Power Dissipation at Case Temperature TC= 25°C Operating Temperature Storage Temperature range 500 2.4 9.5 2.4 V 180 5 20 3 40 -55 to +150 -55 to +150 A mJ V Ω W °C THERMAL CHARACTERISTICS Symbol Ratings Value RthJC Thermal Resistance, junction-case 3.1 RthJA Thermal Resistance, junction-ambient 75 01/10/2012 COMSET SEMICONDUCTORS Unit K/W 1/4 SEMICONDUCTORS BUZ74 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VDSS VGS(th) IDSS IGSS RDS(on) Ratings Test Condition(s) Drain-Source Breakdown Voltage Gate-threshold Voltage Zero Gate Voltage Drain Current Gate-Source leakage Current Drain-Source on Resistance Min Typ Max Unit ID= 250 µA, VGS= 0 V 500 - - V ID=1 mA, VGS= VDS VDS= 500 V, VGS= 0 V Tj= 25 °C VDS= 500 V, VGS= 0 V Tj= 125 °C VGS= 20 V, VDS= 0 V ID= 1.5 A, VGS= 10 V 2.1 3 4 V - - 1 µA - - 100 - 2.5 100 3 Min Typ Max Unit 1.8 2.1 - - 450 675 - 50 75 - 20 8 40 50 30 30 12 60 65 40 Min Typ Max TC = 25°C - - 2.4 TC = 25°C - - 9.5 VGS = 0 V, IF = 4.8 A - 1 300 1.3 - V ns - 2.5 - µC nA Ω DYNAMIC CHARACTERISTICS Symbol Ratings Test Condition(s) VDS = 2*ID*RDS(on)max ID= 1.5 A gfs Transconductance CISS Input Capacitance COSS Output Capacitance CRSS td(on) tr td(off) tf Reverse transfer Capacitance Turn-on Delay Time Rise time Turn-off Delay Time Fall Time VGS= 0 V, VDS= 25 V f= 1MHz VDD= 30 V, VGS= 10 V ID= 2.1 A, RGS= 50 Ω S pF ns REVERSE DIODE Symbol Ratings Test Condition(s) VSD Trr Inverse Diode Continuous Forward Current. Inverse diode direct current, pulsed. Inverse Diode Forward voltage Reverse Recovery Time Qrr Reverse Recovery Charge IS ISM 01/10/2012 Unit A VR = 100 V, IF = 2.4 A di/dt = 100 A/µs COMSET SEMICONDUCTORS 2/4 SEMICONDUCTORS BUZ74 MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Gate Drain Source Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 01/10/2012 [email protected] COMSET SEMICONDUCTORS 3/4 SEMICONDUCTORS BUZ74 01/10/2012 COMSET SEMICONDUCTORS 4/4