COMSET BUZ31

SEMICONDUCTORS
BUZ31
POWER MOS TRANSISTORS
FEATURE
•
•
•
•
•
Nchannel
Enhancement mode
Avalanche-rated
TO-220 envelope
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
IDS
IDM
IAR
EAR
EAS
VGS
RDS(on)
PT
tJ
tstg
Ratings
Drain-Source Voltage
Continuous Drain Current TC= 37°C
Pulsed Drain Current TC= 25°C
Avalanche Current, Limited by Tjmax
Avalanche Energy, Periodic Limited by Tjmax
Avalanche Energy, Single pulse
ID = 14.5 A, VDD = 50 V, RGS = 25 Ω
L = 1.42 mH, Tj = 25°C
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature TC= 25°C
Operating Temperature
Storage Temperature range
Value
Unit
200
14.5
58
14.5
9
V
200
20
0.2
95
-55 to +150
-55 to +150
A
mJ
V
Ω
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
Thermal Resistance, chip case
RthJA
Thermal Resistance, chip to ambient
01/10/2012
COMSET SEMICONDUCTORS
Value
<1.32
<75
Unit
K/W
1/3
SEMICONDUCTORS
BUZ31
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VDSS
VGS(th)
IDSS
IGSS
RDS(on)
Ratings
Test Condition(s)
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
Zero Gate Voltage Drain
Current
Gate-Source leakage Current
Drain-Source on Resistance
Min
Typ
Max
Unit
ID= 250 µA, VGS= 0 V
200
-
-
V
ID=1 mA, VGS= VDS
VDS= 200 V, VGS= 0 V
Tj= 25 °C
VDS= 200 V, VGS= 0 V
Tj= 125 °C
VGS= 20 V, VDS= 0 V
ID= 9 A, VGS= 10 V
2.1
3
4
V
-
0.1
1
µA
-
1
100
-
10
0.16
100
0.2
nA
Ω
Test Condition(s)
Min
Typ
Max
Unit
VDS >2 * ID * RDS(on)max
ID= 9 A
3
4.2
-
S
-
840
1120
-
180
270
-
95
12
50
150
60
150
20
75
200
80
Min
Typ
Max
TC = 25°C
-
-
14.5
TC = 25°C
-
-
58
VGS = 0 V, IF = 29 A
VR = 100 V, IF = IS
diF/dt = 100 A/µs
-
1.1
170
1.1
1.6
-
DYNAMIC CHARACTERISTICS
Symbol
Ratings
gfs
Transconductance
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
td(on)
tr
td(off)
tf
Reverse transfer Capacitance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
VGS= 0 V, VDS= 25 V
f= 1MHz
VDD= 30 V, VGS= 10 V
ID= 3 A, RGS= 50 Ω
pF
ns
REVERSE DIODE
Symbol
IS
ISM
VSD
Trr
Qrr
01/10/2012
Ratings
Test Condition(s)
Inverse Diode Continuous
Forward Current.
Inverse diode direct current,
pulsed.
Inverse Diode Forward voltage
Reverse Recovery Time
Reverse Recovery Charge
COMSET SEMICONDUCTORS
Unit
A
V
ns
µC
2/3
SEMICONDUCTORS
BUZ31
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
0,46
2,50
4,98
2.49
0,70
Pin 1 :
Pin 2 :
Pin 3 :
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Gate
Drain
Source
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
01/10/2012
[email protected]
COMSET SEMICONDUCTORS
3/3