STK830FC Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • • • • Low input capacitance. Improved gate charge. Low leakage current : 10uA (Max.) @ VDS=500V. Low RDS(ON) : 1.17Ω(Typ.) Ordering Information Type NO. Marking Package Code STK830FC STK830 TO-220F-3SL Outline Dimensions unit : mm PIN Connections 1. Gate 2. Drain 3. Source KST-H017-000 1 STK830FC Absolute maximum ratings Characteristic Symbol Rating Unit Drain-Source voltage VDSS 500 V Gate-Source voltage VGS ±30 V * A * Continuous Drain current (Tc=25℃) ID 4.5 Continuous Drain current (Tc=100℃) ID 2.9 A Drain Current-Pulsed IDM 18 PD 38 0.3 A W W/℃ ① Power Dissipation (Tc=25℃) Linear Derating Factor Single Pulsed Avalanche Energy ② EAS 270 mJ Avalanche current ① IAR 4.5 A EAR 7.3 mJ dv/dt 5.5 V/ns TJ , Tstg -55~150 °C TL 300 °C Repetitive Avalanche Energy ① Peak Diode Recovery dv/dt Operating Junction and Storage temperature range Maximum lead temp. for soldering Purpose, 1/8” from case for 5-seconds * Limited by Maximum junction Temperature Thermal Resistance Characteristic Symbol Junction-to-Case Rθ JC Case-to-Sink Rθ CS Junction-to-Ambient Rθ JA KST-H017-000 Typ. Max Units 3.31 0.5 ℃/W 62.5 2 STK830FC Electrical Characteristics (Tc=25°C unless otherwise specified) Characteristic Symbol Test Condition Min. Drain-Source breakdown voltage BVDSS ID=250µA, VGS=0 500 Gate-Threshold voltage VGS(th) ID=250µA, VDS=5V 2.0 Typ. Max. Unit V 4.0 V 10 µA Drain-source leakage current IDSS VDS=500V Gate-source leakage IGSS VDS=0V, VGS=±30V ±100 nA 1.5 Ω Drain-Source on-resistance ④ RDS(ON) VGS=10V, ID=2.25A Forward transconductance ④ gfs VDS=50V, ID=2.25A Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain(“Miller”)charge 3.87 VGS=0V, VDS=25V, f=1MHz VDD=250V,ID=4.5A RG=12Ω ④⑤ VDS=400V,VGS=10V, ID=4.5A 760 900 85 100 15 22 15 40 16 40 66 140 22 55 33 43 pF ns nC 4.4 ④⑤ Qgd S 16.6 Source-Drain Diode Ratings and Characteristics Characteristic Symbol Continuous source current IS Test Condition Min Pulsed-source current ① ISM Integral reverse pn-diode in the MOSFET Diode forward voltage ④ VSD TJ=25℃, VGS=0V, IS=4.5A Reverse recovery time Reverse recovery charge trr Qrr TJ=25℃,IF=4.5A diF/dt=100A/us ④ Typ Max 4.5 1.4 18 Units A V 285 ns 2.0 uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=30mH, IAS=4.5A, VDD=50V, RG=27Ω , starting TJ=25℃ ③ ISD ≤ 4.5A, di/dt≤ 130A/us, VDD≤ BVDSS, starting TJ=25℃ ④ Pulse Test : Pulse Width=250us, Duty cycle≤ 2% ⑤ Essentially independent of operating temperature KST-H017-000 3 STK830FC Electrical Characteristic Curves Fig. 1 ID - VDS : p o T V V 5 5 SV V . G5 0 V V V . V 4 V1187655 : m o t t u B Fig. 2 ID - VGS e s l C u P s5 u2 :0 =C e 5T t 2. o . N1 2 Test ° Fig. 4 IDR - VSD Fig. 3 RDS(on) - ID Fig. 5 Fig. 6 VGS - QG Capacitance - VDS = KST-H017-000 4 STK830FC Fig. 8 RDS(on) - TJ Fig. 7 BVDSS - TJ C C Fig. 9 ID - TC Fig. 10 Safe operating Area Fig. 11 Thermal Response C KST-H017-000 * Θ C 5 STK830FC Fig. 12 Gate Charge Test Circuit & Waveform Fig. 13 Resistive Switching Test Circuit & Waveform Fig. 14 Unclamped Inductive Switching Test Circuit & Waveform KST-H017-000 6 STK830FC Fig. 15 Peak Diode Recovery dv/dt Test Circuit & Waveform KST-H017-000 7 STK830FC These AUK products are intended for usage in general electronic equipments(Office and communication equipment, measuring equipment, domestic electrification, etc.). Please make sure that you consult with us before you use these AUK products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, traffic signal, combustion central, all types of safety device, etc.). AUK cannot accept liability to any damage which may occur in case these AUK products were used in the mentioned equipments without prior consultation with AUK. KST-H017-000 8