DINTEK DTL15N03

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N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)a, g
0.0135 at VGS = 10 V
16
0.0165 at VGS = 4.5 V
16
• Halogen-free
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
Qg (Typ.)
7.3 nC
RoHS
COMPLIANT
APPLICATIONS
TO-251
• DC/DC Conversion
- System Power
D
G
S
G D S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Limit
30
± 20
16
16
12b, c
9.5b, c
32
15
11.25
16
2.9b, c
27.7
17.7
3.5b, c
2.2b, c
- 55 to 150
260
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
29
3.6
Maximum
36
4.5
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
V
33
ID = 250 µA
mV/°C
-5
VGS(th)
VDS = VGS , ID = 250 µA
2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≥ 5 V, VGS = 10 V
1.2
µA
A
20
VGS = 10 V, ID = 10 A
0.0105
0.0135
VGS = 4.5 V, ID = 7 A
0.0135
0.0165
VDS = 15 V, ID = 10 A
24
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
846
VDS = 15 V, VGS = 0 V, f = 1 MHz
72
VDS = 15 V, VGS = 10 V, ID = 10 A
td(off)
15.4
23
7.3
11
2.3
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
0.2
0.8
1.6
15
30
12
24
13
26
tf
10
20
td(on)
9
18
tr
td(off)
nC
2.2
td(on)
tr
pF
187
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
9
18
14
28
8
16
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
16
32
IS = 3 A, VGS = 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.78
1.2
V
17
34
ns
9.5
19
nC
10
7
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
8
VGS = 10 thru 5 V
VGS = 4 V
30
20
VGS = 3 V
I D - Drain Current (A)
I D - Drain Current (A)
40
6
4
TC = 25 °C
2
10
TC = 125 °C
TC = - 55 °C
0
0.0
0
0.5
1.0
1.5
2.0
0
2.5
2
1
VDS - Drain-to-Source Voltage (V)
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.025
1100
0.020
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
880
VGS = 4.5 V
0.015
VGS = 10 V
660
440
Coss
0.010
220
Crss
0.005
0
10
0
20
30
40
50
0
10
15
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
30
1.8
10
ID = 10 A
ID = 10 A
1.6
8
VGS = 10 V
VDS = 15 V
VDS = 20 V
4
2
0
0.0
1.4
(Normalized)
VDS = 10 V
6
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
5
1.2
VGS = 4.5 V
1.0
0.8
3.2
6.4
9.6
Qg - Total Gate Charge (nC)
Gate Charge
12.8
16.0
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.06
100
ID = 10 A
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
0.05
TJ = 25 °C
1
0.1
0.01
0.04
0.03
TJ = 125 °C
0.02
0.01
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
3
4
5
6
7
8
9
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
120
0.4
0.2
96
0.0
Power (W)
VGS(th) Variance (V)
1
- 0.2
ID = 5 mA
72
48
- 0.4
ID = 250 µA
24
- 0.6
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
100
Limited by RDS(on)*
I D - Drain Current (A)
1
10
Single Pulse Power (Junction-to-Ambient)
Threshold Voltage
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
0.01
0.01
BVDSS
Limited
DC
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
0.1
Time (s)
TJ - Temperature (°C)
100
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
I D - Drain Current (A)
32
24
Package Limited
16
8
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
35
2.0
28
1.6
Power (W)
Power (W)
Current Derating*
21
14
1.2
0.8
0.4
7
0.0
0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
150
TA - Case Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 81 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
6
1
10
Package Information
TOĆ251AA (DPAK)
E
A
L2
b2
Dim
A
A1
b
b1
b2
c
c1
D
E
e
L
L1
L2
L3
D
L3
L1
b1
L
b
MILLIMETERS
c1
e
c
A1
INCHES
Min
Max
Min
Max
2.21
2.38
0.087
0.094
0.89
1.14
0.035
0.045
0.71
0.89
0.028
0.035
0.76
1.14
0.030
0.045
5.23
5.43
0.206
0.214
0.46
0.58
0.018
0.023
0.46
0.58
0.018
0.023
5.97
6.22
0.235
0.245
6.48
6.73
0.255
0.265
2.28 BSC
0.090 BSC
8.89
9.53
0.350
0.375
1.91
2.28
0.075
0.090
0.89
1.27
0.035
0.050
1.15
1.52
0.045
0.060
ECN: S-03946—Rev. E, 09-Jul-01
DWG: 5346
Note: Dimension L3 is for reference only.
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
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