D56/ www.daysemi.jp N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0041 at VGS = 10 V 60g 0.0059 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 34 nC • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested RoHS COMPLIANT APPLICATIONS D TO-252 • Low-Side Switch for DC/DC Converters - Servers - POL - VRM • OR-ing G G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ID TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Unit V 60g 60g 36b, c 29b, c 80 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 30 ± 20 A 60g 4.9b, c 50 125 83 53 mJ 5.4b, c 3.4b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 18 1.0 Maximum 23 1.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. 1 D56/ www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V 28 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V - 6.6 1.2 30 µA A VGS = 10 V, ID = 20 A 0.0031 0.0041 VGS = 4.5 V, ID = 20 A 0.0043 0.0059 VDS = 10 V, ID = 20 A 100 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 4590 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A 74 110 34 51 VDS = 15 V, VGS = 4.5 V, ID = 20 A 12 tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time f = 1 MHz 1.6 19 35 5 10 85 5 10 td(on) 45 85 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf Fall Time 0.8 45 td(off) Turn-Off Delay Time VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 0.2 tf tr Rise Time nC 10 td(on) Turn-On Delay Time pF 810 320 18 45 60 110 30 60 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 60 80 IS = 4 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.72 1.1 V 33 50 ns 25 40 nC 16 17 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 5 VGS = 10 thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 64 48 32 VGS = 3 V 16 3 2 TC = 125 °C 1 TC = 25 °C TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 6000 0.0027 Ciss 4800 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2 VDS - Drain-to-Source Voltage (V) 0.0030 0.0024 0.0041 VGS = 10 V 3600 2400 0.003 1200 0.0015 Coss Crss 0 0 14 28 42 56 70 6 0 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.7 ID = 10 A ID = 20 A VDS = 15 V 8 VGS = 10 V VDS = 10 V VDS = 20 V 6 4 2 (Normalized) 1.5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1 1.3 VGS = 4.5 V 1.1 0.9 0 0 16 32 48 Qg - Total Gate Charge (nC) Gate Charge 64 80 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 D56/ www.daysemi.jp 100 0.010 10 0.008 R DS(on) - On-Resistance (Ω) I S - Source Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.006 0.004 TJ = 125 °C 0.002 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 3 5 6 7 8 9 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 200 0.2 160 - 0.1 ID = 5 mA - 0.4 ID = 250 µA - 0.7 10 120 80 40 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 DC BVDSS Limited TA = 25 °C Single Pulse 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 4 Source-Drain Diode Forward Voltage 0.5 - 1.0 - 50 1 VSD - Source-to-Drain Voltage (V) Power (W) V GS(th) Variance (V) 0.001 0.0 100 10 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 170 I D - Drain Current (A) 136 102 Package Limited 68 34 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 100 2.5 80 2.0 Power (W) Power (W) Current Derating* 60 40 20 1.5 1.0 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 1 Package Information TO-252AA CASE OUTLINE E C2 L3 H D b2 C A1 D1 e1 L gage plane height (0.5 mm) e L5 L4 b INCHES MILLIMETERS A b3 DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 E1 Note • Dimension L3 is for reference only. 1 Application Note RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 1 Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. 1