DINTEK DTS2301

Din-Tek
Preliminary Datasheet
'76
DINDS0290EJ0400
(Previous: DIN03G1317-0300)
Rev.4.00
Mar 28, 2011
Silicon P Channel MOS FET
Power Switching
Features
 Low on-resistance
RDS(on) = m typ (VGS = –4.5 V, ID = –1.8 A)
 Low drive current
 High speed switching
 2.5 V gate drive
Outline
Package code: PLSP0003ZB-A
(Package name: SOT-23)
3
3
2
1
D
G
1. Source
2. Gate
3. Drain
2
1
Note:
S
Marking is “018K”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
Ratings
–20
+8 / –12
Unit
V
V
ID
ID(pulse) Note1
IDR
Pch(pulse) Note2
Tch
Tstg
–3.8
–11
–3.8
0.8
150
–55 to +150
A
A
A
W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
DINDS0290EJ0400 Rev.4.00
Mar 28, 2011
Page 1 of 6
'76
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
IGSS
IDSS
VGS(off)
Min
–20
+8
–12
—
—
—
–0.5
Typ
—
—
—
—
—
—
—
Max
—
—
—
+10
–10
–1
–1.5
Unit
V
V
V
A
A
A
V
Test conditions
ID = –10 mA, VGS = 0
IG = +100 A, VDS = 0
IG = –100 A, VDS = 0
VGS = +6 V, VDS = 0
VGS = –10 V, VDS = 0
VDS = –20 V, VGS = 0
VDS = –10 V, ID = –1 mA
RDS(on)
—
68
98
m
ID = –1.8 A, VGS = –4.5 V Note3
RDS(on)
—
95
115
m
ID = –1.8 A, VGS = –2.5 V Note3
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
4.5
—
—
—
—
—
—
6.5
597
149
93
18
43
37
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ID = –1.8 A, VDS = –10 VNote3
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
12
6.3
1.1
2.5
–0.85
—
—
—
—
–1.1
ns
nC
nC
nC
V
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
VDS = –10 V
VGS = 0
f = 1 MHz
ID = –1.8 A
VGS = –4.5 V
RL = 5.5 
Rg = 4.7 
VDD = –10 V
VGS = –4.5 V
ID = –3.8 A
IF = –3.8 A, VGS = 0 Note3
Notes: 3. Pulse test
DINDS0290EJ0400 Rev.4.00
Mar 28, 2011
Page 2 of 6
DTS2301
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
Channel Dissipation Pch (W)
1
–100
Drain Current ID (A)
0.8
0.6
0.4
0.2
0
Operation in this area
is limited by RDS(on)
–10
1
m
s
PW 10
m
s
=
10
DC
0
O
m
pe
s
ra
tio
n
–1
–0.1
Ta = 25°C
1 Shot Pulse
0
50
100
–0.01
–0.01
150
–100
Typical Transfer Characteristics (1)
–10
–2.6 V
–2.4 V
Pulse Test
Tc = 25°C
–6
–2.2 V
–2.0 V
–4
–1.8 V
–2
–1.6 V
Drain Current ID (A)
Drain Current ID (A)
–10
Typical Output Characteristics
–3 V
–6 V
–10 V
VGS = 0 V
0
–1
Drain to Source Voltage VDS (V)
–10
–8
–0.1
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
0
100 μs
–2
–4
–6
–8
–8
–6
–4
–2
0
–10
VDS = –10 V
Pulse Test
Tc = 75°C
0
Drain to Source Voltage VDS (V)
–1
–25°C
25°C
–2
–3
–4
Gate to Source Voltage VGS (V)
Drain Current ID (A)
–1
VDS = –10 V
Pulse Test
–0.1
–0.01 Tc = 75°C
25°C
–0.001
–25°C
–0.0001
0
–0.5
–1
–1.5
–2
–2.5
–3
Gate to Source Voltage VGS (V)
DINDS0290EJ0400 Rev.4.00
Mar 28, 2011
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs.
Typical Transfer Characteristics (2)
Case Temperature
–1.5
VDS = –10 V
Pulse Test
ID = –10 mA
–1
–1 mA
–0.5
0
–25
–0.1 mA
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Page 3 of 6
Preliminary
–400
Pulse Test
Tc = 25°C
–300
–200
ID = –3.4 A
–1.8 A
–100
–1 A
–0.5 A
0
0
–2
–4
–6
–8
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–10
1000
Pulse Test
Tc = 25°C
VGS = –2.5 V
100
–4.5 V
–10 V
10
–0.1
–1
–10
–100
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature
Static Drain to Source on State Resistance
vs. Case Temperature
130
130
ID = –3.4 A
110
–1.8 A
90
–1 A
70
–0.5 A
50
Pulse Test
VGS = –2.5 V
30
–25
25
50
75
100 125 150
Pulse Test
VGS = –4.5 V
110
90
–1.8 A
ID = –3.4 A
70
–1 A
50
–0.5 A
30
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
Zero Gate Voltage Drain current vs.
Case Temperature
–10000
Pulse Test
VDS = –10 V
10
–25°C
1
25°C
0.1
0.01
–0.01
IDSS (nA)
100
0
Drain to Source on State Resistance
RDS(on) (mΩ)
Gate to Source Voltage VGS (V)
Tc = 75°C
–0.1
–1
Drain Current ID (A)
DINDS0290EJ0400 Rev.4.00
Mar 28, 2011
–10
Zero Gate Voltage Drain current
Forward Transfer Admittance |yfs| (S)
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage VDS(on) (mV)
'76
Pulse Test
VGS = 0 V
–1000 VDS = –20 V
–100
–10
–1
–0.1
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Page 4 of 6
'76
Preliminary
Switching Characteristics
0
VDS
VDD = –20 V
–10 V
–5 V
–5 V
–10 V
–20
–4
–8
VDD = –20 V
VGS
–12
ID = –3.4 A
Tc = 25°C
–40
0
2
4
6
8
10
–16
16
12
1000
Switching Time t (ns)
0
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
100
VDD = –10 V
VGS = –4.5 V
Rg = 4.7 Ω
PW = 5 μs
Tc = 25°C
tr
td(on)
td(off)
tf
10
1
–0.1
–1
–10
Gate Charge Qg (nc)
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Input Capacitance vs.
Gate to Source Voltage
1100
1000
1050
Coss
100
Crss
Ciss (pF)
Ciss, Coss, Crss (pF)
Ciss
–5
–10
–15
800
–10 –8 –6 –4 –2
–20
0
2
4
6
8
10
Reverse Drain Current vs.
Source to Drain Voltage
Body-Drain Diode Forward Voltage vs.
Case Temperature
Pulse Test
Tc = 25°C
–8
–5V
–6
–4
–2
5, 10 V
VGS = 0 V
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage VSD (V)
DINDS0290EJ0400 Rev.4.00
Mar 28, 2011
Body-Drain Diode Forward Voltage VSDF (V)
Reverse Drain Current IDR (A)
VDS = 0 V
f = 1 MHz
Gate to Source Voltage VGS (V)
–10V
0
900
Drain to Source Voltage VDS (V)
–10
0
950
850
VGS = 0 V
f = 1 MHz
10
–0
1000
–0.6
VGS = 0
–0.5
ID = –10 mA
–0.4
–0.3
–1 mA
–0.2
25
50
75
100
125
150
Case Temperature Tc (°C)
Page 5 of 6
'76
Preliminary
Package Dimensions
JEITA Package Code
SC-59A
Package Name
SOT-23
DIN-TEK Code
PLSP0003ZB-A
D
Previous Code
SOT-23
A
e
E
Q
A
x M S
A
c
HE
L
A
MASS[Typ.]
0.011g
LP
L1
A3
b
Reference Dimension in Millimeters
Symbol
Min Nom Max
e
A2
A
e1
A1
S
b
I1
c
b2
A-A Section
Pattern of terminal position areas
A
A1
A2
A3
b
c
D
E
e
HE
L
L1
LP
x
b2
e1
I1
Q
1.0
0
1.0
0.35
0.1
2.7
1.35
2.2
0.35
0.15
0.25
1.1
0.25
0.4
0.16
1.5
0.95
2.8
1.95
0.3
1.3
0.1
1.2
0.5
0.26
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.55
1.05
Ordering Information
Orderable Part Number
DIN-TEKRQJDTS2301H
DINDS0290EJ0400 Rev.4.00
Mar 28, 2011
Quantity
3000 pcs.
Shipping Container
178 mm reel, 8 mm Emboss taping
Page 6 of 6
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Colophon 1.1