DINTEK DTS3401_13

DTS3401
www.din-tek.jp
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) (Ω)
ID (A)a, b
0.088 at VGS = - 10 V
- 2.7
0.130 at VGS = - 4.5 V
- 2.2
Qg (Typ.)
• Halogen-free Option Available
• TrenchFET® Power MOSFET
RoHS
4.1 nC
APPLICATIONS
COMPLIANT
• Load Switch for Portable Devices
TO-236
(SOT-23)
S
G
1
3
S
G
D
2
Top View
D
DTS3401
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
TC = 25 °C
TC = 70 °C
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
- 2.8
ID
- 2.7a, b
- 2.2a, b
IDM
TC = 25 °C
Continuous Source-Drain Diode Currenta, b
TA = 25 °C
Maximum Power Dissipationa, b
- 1.5
IS
- 0.91a, b
1.8
TC = 70 °C
1.14
PD
Soldering Recommendations (Peak Temperature)
W
1.1a, b
0.7a, b
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 12
TC = 25 °C
TA = 25 °C
V
- 3.5
TA = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
Unit
- 55 to 150
c
°C
260
THERMAL RESISTANCE RATINGS
Symbol
Typical
Maximum
Maximum Junction-to-Ambienta, c
t≤5s
RthJA
90
115
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
55
70
Parameter
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
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DTS3401
www.din-tek.jp
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
mV/°C
4.5
-1
-3
V
- 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ 5 V, VGS = - 10 V
RDS(on)
V
- 32
-6
µA
A
VGS = - 10 V, ID = - 3.5 A
0.073
0.088
VGS = - 4.5 V, ID = - 2.5 A
0.110
0.138
VDS = - 10 V, ID = - 3.5 A
7
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
51
Total Gate Charge
Qg
4.1
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
340
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A
67
pF
6.2
nC
1.3
1.8
f = 1 MHz
td(on)
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
tr
td(off)
Ω
10
40
60
40
60
20
40
tf
17
30
td(on)
5.5
10
13
25
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω
tr
td(off)
tf
17
30
7.7
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 1.5
- 12
IS = - 0.75 A, VGS = 0 V
IF = - 2.5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
17
30
ns
11
20
nC
12
5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTS3401
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
2.0
VGS = 10 thru 6 V
VGS = 5 V
I D - Drain Current (A)
I D - Drain Current (A)
10
VGS = 4 V
8
6
4
1.0
TC = 25 °C
0.5
VGS = 3 V
2
1.5
TC = 125 °C
TC = - 55 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
0.0
1.0
2.0
1.5
VDS - Drain-to-Source Voltage (V)
2.0
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
600
0.15
450
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2.5
VGS = 4.5 V
0.10
VGS = 10 V
Ciss
300
0.05
150
0.00
0
Coss
Crss
0
3
6
9
0
12
6
12
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
ID = 2.5 A
ID = 3.2 A
VDS = 15 V
VGS = 10 V
1.6
VDS = 7.5 V
6
VDS = 22.5 V
4
2
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
18
1.4
VGS = 4.5 V
1.2
1.0
0.8
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
DTS3401
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.4
ID = 3.5 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
TJ = 25 °C
1
TJ = 150 °C
0.1
TJ = - 50 °C
0.01
0.3
0.2
TJ = 125 °C
0.1
TJ = 25 °C
0.001
0.0
0.0
0.3
0.6
0.9
1.2
1.5
0
2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
8
10
10
8
0.4
ID = 250 µA
Power (W)
ID = 1 mA
0.2
0.0
6
4
-0.2
-0.4
- 50
TA = 25 °C
2
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I D - Drain Current (A)
Limited by RDS(on)*
100 µs
10
1 ms
1
10 ms
0.1
100 ms
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
1 s, 10 s
100 s, DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
6
On-Resistance vs. Gate-to-Source Voltage
0.6
VGS(th) Variance (V)
4
VGS - Gate-to-Source Voltage (V)
1000
DTS3401
www.din-tek.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJF = 70 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
5
Package Information
www.din-tek.jp
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
INCHES
Min
Max
Min
Max
A
0.89
1.12
0.035
0.044
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.95 BSC
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
1
Application Note
www.din-tek.jp
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
1
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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