DT6$ www.din-tek.jp P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a, e 0.053 at VGS = - 10 V - 5.6 0.070 at VGS = - 4.5 V - 4.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 7 nC APPLICATIONS • Load Switch • Notebook Adaptor Switch • DC/DC Converter TO-236 (SOT-23) S G 1 S 2 3 D G Top View DTS3401A D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) - 4.7 ID TA = 25 °C - 4.2b, c - 3.3b, c TA = 70 °C Maximum Power Dissipation IDM TC = 25 °C - 25 - 1b, c TC = 25 °C 2.5 TC = 70 °C 1.6 PD TA = 25 °C A - 2.1 IS TA = 25 °C W 1.25b, c 0.8b, c TA = 70 °C Operating Junction and Storage Temperature Range V - 5.6 TC = 70 °C Pulsed Drain Current Continous Source-Drain Diode Current Unit TJ, Tstg °C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb, d t≤5s RthJA 75 100 Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 166 °C/W. e. Package Limited. 1 DT6$ www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V - 19 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 2.5 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≤ - 5 V, VGS = - 10 V 4.4 - 1.2 - 25 µA A VGS = - 10 V, ID = - 4.2 A 0.037 0.053 VGS = - 4.5 V, ID = - 3.2 A 0.062 0.070 VDS = - 15 V, ID = - 4.2 A 10 VDS = - 15 V, VGS = 0 V, f = 1 MHz 115 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 590 pF 93 VDS = - 15 V, VGS = - 10 V, ID = - 4.2 A 13.6 21 7 11 2.3 VDS = - 15 V, VGS = - 4.5 V, ID = - 4.2 A 3.2 5 10 30 45 25 38 16 24 tf 8 16 td(on) 8 16 10 20 18 27 8 16 f = 1 MHz td(on) tr td(off) tr td(off) nC VDD = - 15 V, RL = 4.5 Ω ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω VDD = - 15 V, RL = 4.5 Ω ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω tf 1 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 4.2 - 25 IS = - 3.3 A, VGS = 0 V IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 17 26 ns 9 18 nC 10 7 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DT6$ www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 3.0 VGS = 5 V VGS = 10 V thru 6 V 2.4 I D - Drain Current (A) I D - Drain Current (A) 20 15 VGS = 4 V 10 1.8 1.2 TC = 25 °C 5 0.6 VGS = 3 V TC = 125 °C TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 3 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1000 0.10 800 0.08 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 0.06 VGS = 10 V 0.04 Ciss 600 400 Coss 200 0.02 Crss 0 0.00 0 5 10 15 20 0 25 10 15 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.7 10 ID = 4.2 A ID = 4.2 A VDS = 15 V 1.5 VDS = 8 V 6 VDS = 24 V 4 VGS = 10 V (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 1.3 VGS = 4.5 V 1.1 0.9 2 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge 12 15 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 DT6$ www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 100 TJ = 25 °C 1 0.08 TJ = 125 °C 0.06 TJ = 25 °C 0.04 0.02 0.1 0.0 VGS(th) (V) R DS(on) - On-Resistance (Ω) TJ = 150 °C 10 0.3 0.6 0.9 1.2 2 1.5 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 10 2.0 8 1.8 ID = 250 µA 1.6 1.4 6 4 2 - 25 0 25 50 75 100 125 0 0.01 150 TA = 25 °C 0.1 1 TJ - Temperature (°C) 100 1000 Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* I D - Drain Current (A) 10 Time (s) Threshold Voltage 10 100 µs 1 ms 1 10 ms 0.1 100 ms TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 1 s, 10 s DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 6 Source-Drain Diode Forward Voltage 2.2 1.2 - 50 4 VSD - Source-to-Drain Voltage (V) Power (W) I S - Source Current (A) ID = 4.2 A DT6$ www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 I D - Drain Current (A) 6 Package Limited 4 2 0 25 0 50 75 100 125 150 TC - Case Temperature (°C) 2.5 1.0 2.0 0.8 1.5 0.6 Power (W) Power (W) Current Derating* 1.0 0.5 0.4 0.2 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DT6$ www.din-tek.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. . 6 Package Information www.din-tek.jp SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 1 Application Note www.din-tek.jp 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 1 Legal Disclaimer Notice www.din-tek.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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