DTS7001 www.din-tek.jp P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 5 at VGS = - 10 V - 1 to - 3 - 130 TO-236 (SOT-23) G S 1 3 S • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 5 • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • 1200 V ESD Protection • Compliant to RoHS Directive 2002/95/EC D APPLICATIONS G • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. • Battery Operated Systems • Power Supply Converter Circuits • Solid-State Relays 2 Top View DTS01 D P-Channel MOSFET BENEFITS • • • • • Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Easily Driven without Buffer ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol Parameter Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 TA = 25 °C Continuous Drain Currenta TA = 100 °C Pulsed Drain Currentb ID IDM TA = 25 °C Power Dissipationa TA = 100 °C Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. 1 PD Unit V - 130 - 105 mA - 800 350 140 mW RthJA 350 °C/W TJ, Tstg - 55 to 150 °C DTS7001 www.din-tek.jp SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 10 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea IGSS IDSS ID(on) RDS(on) -3 VDS = 0 V, VGS = ± 20 V ± 10 VDS = 0 V, VGS = ± 10 V ± 200 VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 500 VDS = 0 V, VGS = ± 5 V ± 100 VDS = - 60 V, VGS = 0 V - 25 VDS = - 60 V, VGS = 0 V, TJ = 85 °C - 50 VGS = - 10 V, VDS = - 10 V - 600 VGS = - 4.5 V, ID = - 25 mA 10 5 Diode Forward Voltage VDS = - 10 V, ID = - 100 mA VSD IS = - 200 mA, VGS = 0 V nA mA VGS = - 10 V, ID = - 500 mA gfs µA - 250 VGS = - 10 V, VDS = - 4.5 V VGS = - 10 V, ID = - 500 mA, TJ =125 °C Forward Transconductancea V 9 80 mS - 1.4 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1.7 VDS = - 30 V, VGS = - 15 V ID - 500 mA 0.26 VDS = - 25 V, VGS = 0 V f = 1 MHz 10 nC 0.46 23 pF 5 Switchingb Turn-On Time td(on) Turn-Off Time td(off) VDD = - 25 V, RL = 150 ID - 200 mA, VGEN = - 10 V, Rg = 10 20 35 ns Notes: a. Pulse test: PW 300 µs duty cycle 2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTS7001 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 1200 VGS = 10 V TJ = - 55 °C 7V 0.8 I D - Drain Current (mA) ID - Drain Current (A) 8V 0.6 6V 0.4 5V 900 25 °C 125 °C 600 300 0.2 4V 0.0 0 0 1 2 3 4 5 0 2 VDS - Drain-to-Source Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 40 20 VGS = 0 V VGS = 4.5 V 32 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 16 12 VGS = 5 V 8 VGS = 10 V 4 Ciss 24 16 Coss 8 Crss 0 0 0 200 400 600 800 0 1000 5 ID - Drain Current (mA) 10 25 Capacitance 15 1.8 ID = 500 mA 1.5 12 VDS = 30 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 20 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current VDS = 48 V 9 6 3 0 0.0 15 VGS = 10 V at 500 mA 1.2 VGS = 4.5 V at 25 mA 0.9 0.6 0.3 0.3 0.6 0.9 1.2 1.5 0.0 - 50 1.8 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge 3 150 DTS7001 www.din-tek.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 10 1000 RDS(on) - On-Resistance (Ω) I S - Source Current (A) VGS = 0 V 100 TJ = 125 °C 10 TJ = 25 °C 8 ID = 500 mA 6 4 ID = 200 mA 2 TJ = - 55 °C 0 1 0.00 0.3 0.6 0.9 1.2 V SD - Source-to-Drain Voltage (V) 0 1.5 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 0.5 3 0.4 2.5 ID = 250 µA 0.3 2 0.2 Power (W) VGS(th) Variance (V) 2 0.1 1.5 - 0.0 1 TA = 25 °C - 0.1 0.5 - 0.2 - 0.3 - 50 0 - 25 0 25 50 75 100 125 150 0.1 0.01 100 10 1 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient 600 Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 350 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 Normalized Thermal Transient Impedance, Junction-to-Ambient . 4 100 600 Package Information www.din-tek.jp SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.95 BSC 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 1 Application Note www.din-tek.jp 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 1 Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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