DTM9425 www.din-tek.jp P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = - 10 V - 6.6 0.045 at VGS = - 6 V - 5.0 0.050 at VGS = - 4.5 V - 4.4 - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D G 4 G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Steady State 10 s Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 4.1 - 4.6 - 3.2 - 30 - 2.3 A - 1.1 2.5 1.3 1.6 0.8 TJ, Tstg Operating Junction and Storage Temperature Range V - 6.6 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 40 50 70 95 24 30 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. 1 DTM9425 www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 1.0 Typ.a Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Gate Threshold Voltage Drain-Source On-State Forward Resistanceb Transconductanceb Diode Forward Voltageb - 3.0 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 70 °C -5 RDS(on) VDS ≤ - 10 V, VGS = - 10 V - 20 VDS ≤ - 5 V, VGS = - 4.5 V -5 µA A VGS = - 10 V, ID = - 5.8 A 0.033 0.040 VGS = - 6 V, ID = - 5 A 0.043 0.045 0.050 VGS = - 4.5 V, ID = - 4.4 A 0.056 gfs VDS = - 15 V, ID = - 5.8 A 13 VSD IS = - 2.3 A, VGS = 0 V - 0.8 - 1.1 16 24 VDS = - 15 V, VGS = - 10 V, ID = - 3.5 A 2.3 Ω S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.5 Gate Resistance Rg 8.8 td(on) 14 25 14 25 Turn-On Delay Time Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω IF = - 1.2 A, dI/dt = 100 A/µs nC Ω 42 70 30 50 30 60 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTM9425 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 V thru 6 V 5V 25 ID - Drain Current (A) ID - Drain Current (A) 25 20 15 4V 10 20 15 10 TC = 125 °C 5 5 25 °C 3V - 55 °C 0 0 0 1 2 3 4 0 5 1 4 5 Transfer Characteristics Output Characteristics 1100 0.15 880 C - Capacitance (pF) 0.12 0.09 VGS = 4.5 V 0.06 VGS = 6 V Ciss 660 440 Coss 220 0.03 VGS = 10 V Crss 0 0.00 0 4 8 12 16 0 20 5 20 25 30 Capacitance On-Resistance vs. Drain Current 1.6 10 VGS = 10 V ID = 5.7 A VDS = 15 V ID = 3.5 A 1.4 R DS(on) - On-Resistance (Normalized) 8 6 4 1.2 1.0 0.8 2 0 0.0 15 10 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) 2 3.2 6.4 9.6 Qg - Total Gate Charge (nC) Gate Charge 12.8 16.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 DTM9425 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 50 1 0.0 TJ = 25 °C TJ = 150 °C 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.16 ID = 5.8 A 0.12 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 10 150 0.4 120 ID = 250 µA 0.2 Power (W) V GS(th) Variance (V) 8 On-Resistance vs. Gate-to-Source Voltage 0.6 0.0 - 0.2 90 60 30 - 25 0 25 50 75 100 125 0 10- 3 150 10- 2 10-1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 1 0.1 10 ms 100 ms 1s 10 s TC = 25 °C Single Pulse DC 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Foot 4 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage - 0.4 - 50 4 100 10 DTM9425 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 5 Package Information www.din-tek.jp SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 1 Application Note www.din-tek.jp RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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