DINTEK DTU50N03

D56/
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N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.0051 at VGS = 10 V
50d
0.0063 at VGS = 4.5 V
50d
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
21.7
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• DC/DC Converter
D
TO-252
G
G
D
S
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Parameter
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
Pulsed Drain Current
Avalanche Current
a
L = 0.1 mH
Single Avalanche Energy
TC = 25 °C
Maximum Power Dissipationa
TA = 25 °C
Operating Junction and Storage Temperature Range
c
ID
V
50d
50d
IDM
100
IAS
40
EAS
80
PD
Unit
59.5
A
mJ
b
2.7
W
TJ, Tstg
- 55 to 150
°C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
RthJA
46
RthJC
2.1
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
VDS
VDS = 0 V, ID = 250 µA
30
VGS(th)
VDS = VGS, ID = 250 µA
1
IGSS
VDS = 0 V, VGS = ± 20 V
± 250
VDS = 30 V, VGS = 0 V
1
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
2.5
VDS = 30 V, VGS = 0 V, TJ = 125 °C
50
VDS = 30 V, VGS = 0 V, TJ = 150 °C
250
ID(on)
RDS(on)
gfs
VDS ≥ 10 V, VGS = 10 V
50
V
nA
µA
A
VGS = 10 V, ID = 22 A
0.0042
0.0051
VGS = 4.5 V, ID = 20 A
0.0052
0.0063
VDS = 15 V, ID = 20 A
110
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay
Fall Timec
td(off)
641
pF
260
VDS = 15 V, VGS = 10 V, ID = 20 A
VDS = 15 V, VGS = 4.5 V, ID = 20 A
44
66
21.7
32.6
7
nC
6.7
f = 1 MHz
td(on)
tr
Timec
2780
VGS = 0 V, VDS = 15 V, f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
0.4
2
4
8
16
9
18
35
53
9
18
Ω
ns
Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb
IS
50
Pulsed Current
Continuous Current
ISM
100
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 10 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 10 A, dI/dt = 100 A/µs
A
0.75
1.5
V
34
51
ns
2
3
A
34
51
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.007
100
I D - Drain Current (A)
V GS = 3 V
60
40
20
0.006
V GS = 4.5 V
0.005
V GS = 10 V
0.004
0.003
0
0.0
0.5
1.0
1.5
0
2.0
20
40
60
80
V DS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Drain to Source Voltage vs. ID
On-Resistance vs. Drain Current
5
0.015
4
0.012
R DS(on) - On-Resistance (Ω)
I D - Drain Current (A)
R DS(on) - On-Resistance (Ω)
V GS = 10 V thru 4 V
80
3
T C = 25 °C
2
1
100
0.009
T J = 150 °C
0.006
T J = 25 °C
0.003
T C = 125 °C
0
0.0
T C = - 55 °C
0.6
1.2
1.8
2.4
0.000
2
3.0
4
6
8
10
V GS - Gate-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
10
180
VGS - Gate-to-Source Voltage (V)
g fs - Transconductance (S)
ID = 20 A
135
T C = - 55 °C
T C = 25 °C
90
T C = 125 °C
45
8
V DS = 15 V
6
V DS = 24 V
V DS = 8 V
4
2
0
0
0
6
12
18
24
30
0
10
20
30
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
Transconductance
Gate Charge
40
50
3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.1
100
1.7
I S - Source Current (A)
T J = 150 °C
ID = 250 μA
VGS(th) (V)
10
T J = 25 °C
1.3
1
0.9
0.1
0.0
0.3
0.6
0.9
0.5
- 50
1.2
0
25
50
75
100
V SD - Source-to-Drain Voltage (V)
T J - Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
125
150
175
125
150
175
43
V DS - Drain-to-Source Voltage (V)
3750
Ciss
3000
C - Capacitance (pF)
- 25
2250
1500
Coss
750
41
ID = 250 μA
39
37
35
Crss
33
- 50
0
0
5
10
15
20
25
30
- 25
0
25
50
75
100
V DS - Drain-to-Source Voltage (V)
T J - Temperature (°C)
Capacitance
Drain Source Breakdown vs. Junction Temperature
100
2.0
ID = 20 A
80
V GS = 10 V
I D - Drain Current (A)
(Normalized)
R DS(on) - On-Resistance
1.7
1.4
V GS = 4.5 V
1.1
4
Package Limited
40
20
0.8
0.5
- 50
60
0
- 25
0
25
50
75
100
125
150
175
0
25
50
75
100
T J - Junction Temperature (°C)
T C - Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
125
150
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
100
Limited by R DS(on)*
TJ = 150 °C
I D - Drain Current (A)
I DAV (A)
100
TJ = 25 °C
10
100 μA
10
1 ms
10 ms
100 ms
1 s, 10 s, DC
1
0.1
1
10-6
10-5
10-4
10-3
10-2
10-1
T C = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Time (s)
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
10 -4
Single Pulse
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
5
Package Information
TO-252AA CASE OUTLINE
E
C2
L3
H
D
b2
C
A1
D1
e1
L
gage plane height (0.5 mm)
e
L5
L4
b
INCHES
MILLIMETERS
A
b3
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
5.21
-
0.205
0.265
E
6.35
6.73
0.250
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
0.090 BSC
e1
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
• Dimension L3 is for reference only.
1
Application Note
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
1
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including but not limited to the warranty expressed therein.
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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