D56/ www.daysemi.jp N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 21.7 APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Parameter Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 °C Operating Junction and Storage Temperature Range c ID V 50d 50d IDM 100 IAS 40 EAS 80 PD Unit 59.5 A mJ b 2.7 W TJ, Tstg - 55 to 150 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 46 RthJC 2.1 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. 1 D56/ www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. VDS VDS = 0 V, ID = 250 µA 30 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V ± 250 VDS = 30 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 2.5 VDS = 30 V, VGS = 0 V, TJ = 125 °C 50 VDS = 30 V, VGS = 0 V, TJ = 150 °C 250 ID(on) RDS(on) gfs VDS ≥ 10 V, VGS = 10 V 50 V nA µA A VGS = 10 V, ID = 22 A 0.0042 0.0051 VGS = 4.5 V, ID = 20 A 0.0052 0.0063 VDS = 15 V, ID = 20 A 110 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec td(off) 641 pF 260 VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A 44 66 21.7 32.6 7 nC 6.7 f = 1 MHz td(on) tr Timec 2780 VGS = 0 V, VDS = 15 V, f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf 0.4 2 4 8 16 9 18 35 53 9 18 Ω ns Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb IS 50 Pulsed Current Continuous Current ISM 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 10 A, VGS = 0 V trr IRM(REC) Qrr IF = 10 A, dI/dt = 100 A/µs A 0.75 1.5 V 34 51 ns 2 3 A 34 51 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.007 100 I D - Drain Current (A) V GS = 3 V 60 40 20 0.006 V GS = 4.5 V 0.005 V GS = 10 V 0.004 0.003 0 0.0 0.5 1.0 1.5 0 2.0 20 40 60 80 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) Drain to Source Voltage vs. ID On-Resistance vs. Drain Current 5 0.015 4 0.012 R DS(on) - On-Resistance (Ω) I D - Drain Current (A) R DS(on) - On-Resistance (Ω) V GS = 10 V thru 4 V 80 3 T C = 25 °C 2 1 100 0.009 T J = 150 °C 0.006 T J = 25 °C 0.003 T C = 125 °C 0 0.0 T C = - 55 °C 0.6 1.2 1.8 2.4 0.000 2 3.0 4 6 8 10 V GS - Gate-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 10 180 VGS - Gate-to-Source Voltage (V) g fs - Transconductance (S) ID = 20 A 135 T C = - 55 °C T C = 25 °C 90 T C = 125 °C 45 8 V DS = 15 V 6 V DS = 24 V V DS = 8 V 4 2 0 0 0 6 12 18 24 30 0 10 20 30 ID - Drain Current (A) Qg - Total Gate Charge (nC) Transconductance Gate Charge 40 50 3 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.1 100 1.7 I S - Source Current (A) T J = 150 °C ID = 250 μA VGS(th) (V) 10 T J = 25 °C 1.3 1 0.9 0.1 0.0 0.3 0.6 0.9 0.5 - 50 1.2 0 25 50 75 100 V SD - Source-to-Drain Voltage (V) T J - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 125 150 175 125 150 175 43 V DS - Drain-to-Source Voltage (V) 3750 Ciss 3000 C - Capacitance (pF) - 25 2250 1500 Coss 750 41 ID = 250 μA 39 37 35 Crss 33 - 50 0 0 5 10 15 20 25 30 - 25 0 25 50 75 100 V DS - Drain-to-Source Voltage (V) T J - Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 100 2.0 ID = 20 A 80 V GS = 10 V I D - Drain Current (A) (Normalized) R DS(on) - On-Resistance 1.7 1.4 V GS = 4.5 V 1.1 4 Package Limited 40 20 0.8 0.5 - 50 60 0 - 25 0 25 50 75 100 125 150 175 0 25 50 75 100 T J - Junction Temperature (°C) T C - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating 125 150 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 100 Limited by R DS(on)* TJ = 150 °C I D - Drain Current (A) I DAV (A) 100 TJ = 25 °C 10 100 μA 10 1 ms 10 ms 100 ms 1 s, 10 s, DC 1 0.1 1 10-6 10-5 10-4 10-3 10-2 10-1 T C = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Time (s) Single Pulse Avalanche Current Capability vs. Time Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5 Package Information TO-252AA CASE OUTLINE E C2 L3 H D b2 C A1 D1 e1 L gage plane height (0.5 mm) e L5 L4 b INCHES MILLIMETERS A b3 DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 E1 Note • Dimension L3 is for reference only. 1 Application Note RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 1 Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. 1