D5& www.daysemi.jp P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TO-226AA (TO-92) S 1 G 2 D 3 D Top View P-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 4.0 - 3.2 - 3.9 - 20 - 1.35 - 0.95 1.5 1.05 1.0 0.67 TJ, Tstg Operating Junction and Storage Temperature Range V - 4.8 IDM Pulsed Drain Current (10 µs Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Symbol Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 65 83 100 120 43 52 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. 1 D5& www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a V nA VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 70 °C - 25 VDS = - 5 V, VGS = - 4.5 V RDS(on) - 1.5 ± 100 µA - 20 A VGS = - 4.5 V, ID = - 4.8 A 0.032 0.040 VGS = - 2.5 V, ID = - 3.6 A 0.053 0.070 gfs VDS = - 5 V, ID = - 4.8 A 14 VSD IS = - 1.35 A, VGS = 0 V - 0.77 - 1.1 10 15 Ω S V b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = - 6 V, VGS = - 4.5 V, ID = - 4.8 A 1.8 f = 1 MHz td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr 70 45 tr Rise Time Ω 7.7 td(on) Turn-On Delay Time nC 3 VDD = - 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω 60 90 70 110 35 55 IF = - 1.35 A, di/dt = 100 A/µs 65 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 4.5 thru 3 V 16 2.5 V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 2V 4 12 8 TC = 125 °C 4 25 °C - 55 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics 2 5 0 0.0 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 2.5 3.0 D5& www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1500 0.08 1200 C - Capacitance (pF) 0.10 V GS = 2.5 V RDS(on) - 0.06 0.04 VGS = 4.5 V Ciss 900 600 Coss 300 0.02 Crss 0 0.00 0 4 8 12 16 20 2 0 ID - Drain Current (A) 4 8 10 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 6 VGS = 4.5 V ID = 4.8 A VDS = 6 V ID = 4.8 A 5 1.4 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 6 4 3 2 1.2 1.0 0.8 1 0.6 - 50 0 3 0 6 9 12 15 - 25 Gate Charge 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.15 R DS(on) - On-Resistance (Ω) 10 I S - Source Current (A) 25 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) TJ = 150 °C TJ = 25 °C 1 0.1 0.0 0 0.12 ID = 4.8 A 0.09 0.06 0.03 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.2 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 3 D5& www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 50 40 0.2 ID = 250 µA 30 Power (W) V GS(th) Variance (V) 0.3 0.1 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10-2 10-1 TJ - Temperature (°C) 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 ID - Drain Current (A) 10 Limited by R DS(on)* 1 ms 10 ms 1 100 ms 0.1 1s 10 s DC TC = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 1 10-1 Square Wave Pulse Duration (s) 10 Normalized Thermal Transient Impedance, Junction-to-Ambient 4 100 600 D5& www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 5 Package Information Mechanical Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters www.GD\VHPLMS 1 Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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