DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module Replaces July 2002 version DS5548-2.0 FEATURES ■ 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5548- KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1200V 2.2V 800A 1600A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS ■ Inverters ■ Motor Controllers ■ Traction Drives The Powerline range of modules includes half bridge, dual, chopper, bi-directional and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM800DCM12-A000 is a 1200V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised for applications requiring high thermal cycling capability. 5(E1) 1(E1) 2(C2) 3(C1) 4(E2) 6(G1) 7(C1) Fig. 1 Chopper circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM800DCM12-A000 Note: When ordering, please use the whole part number. Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 DIM800DCM12-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1200 V ±20 V Continuous collector current Tcase = 85˚C 800 A IC(PK) Peak collector current 1ms, Tcase = 115˚C 1600 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 6940 W Diode I2t value (IGBT arm) VR = 0, tp = 10ms, Tvj = 125˚C 100 kA2s 225 kA2s 2500 V 10 PC IC I2t Diode I2t value (Diode arm) Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz QPD Partial discharge - per module IEC1287. V1 = 1800V, V2 = 1300V, 50Hz RMS 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DCM12-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Test Conditions Parameter Symbol Rth(j-c) AlN AlSiC 20mm 10mm 175 Thermal resistance - transistor (per arm) Continuous dissipation - Min. Typ. Max. Units - - 18 ˚C/kW junction to case Rth(j-c) Rth(c-h) Tj Tstg - Thermal resistance - diode (IGBT arm) Continuous dissipation - - - 40 ˚C/kW Thermal resistance - diode (Diode arm) junction to case - - 26.7 ˚C/kW Thermal resistance - case to heatsink Mounting torque 5Nm - - 8 ˚C/kW (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 DIM800DCM12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 25 mA Gate leakage current VGE = ±20V, VCE = 0V - - 4 µA VGE(TH) Gate threshold voltage IC = 40mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat)† Collector-emitter saturation voltage VGE = 15V, IC = 800A - 2.2 2.8 V VGE = 15V, IC = 800A, , Tcase = 125˚C - 2.6 3.2 V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - - 800 A IFM Diode maximum forward current tp = 1ms - - 1600 A VF† Diode forward voltage (IGBT arm) IF = 800A - 2.1 2.4 V - 1.8 2.1 V - 2.1 2.4 V - 1.7 2.0 V - 90 - nF Diode forward voltage (Diode arm) Diode forward voltage (IGBT arm) IF = 800A, Tcase = 125˚C Diode forward voltage (Diode arm) VCE = 25V, VGE = 0V, f = 1MHz Cies Input capacitance LM Module inductance - per arm - - 20 - nH Internal transistor resistance - per arm - - 0.27 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 900V, I1 5500 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 4500 - A IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals) * L is the circuit inductance + LM 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DCM12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 800A - 1250 - ns Fall time VGE = ±15V - 170 - ns EOFF Turn-off energy loss VCE = 600V - 130 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.7Ω - 250 - ns L ~ 100nH - 250 - ns Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss - 80 - mJ Qg Gate charge - 9 - µC Qrr Diode reverse recovery charge IF = 800A, VR = 600V, - 80 - µC Irr Diode reverse current dIF/dt = 4200A/µs - 380 - A - 30 - mJ Min. Typ. Max. Units IC = 800A - 1500 - ns Fall time VGE = ±15V - 200 - ns EOFF Turn-off energy loss VCE = 600V - 160 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.7Ω - 400 - ns L ~ 100nH - 220 - ns - 120 - mJ IF = 800A, VR = 600V, - 160 - µC dIF/dt = 4000A/µs - 450 - A - 60 - mJ EREC Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/10 DIM800DCM12-A000 TYPICAL CHARACTERISTICS 1600 1600 Common emitter Tcase = 125˚C Common emitter Tcase = 25˚C 1400 Vce is measured at power busbars 1400 Vce is measured at power busbars 1200 1200 and not the auxiliary terminals Collector current, IC - (A) Collector current, IC - (A) and not the auxiliary terminals 1000 1000 800 600 800 600 400 400 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 200 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 3.5 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 200 0 0 4.0 Fig. 3 Typical output characteristics 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-emitter voltage, Vce - (V) 4.5 5.0 Fig. 4 Typical output characteristics 350 180 Tc = 125˚C, Vce = 600V, 160 Rg = 2.7 Tc = 125˚C, Vce = 600V, IC = 800A 300 140 Switching energy, Esw - (mJ) 250 Switching energy, Esw - (mJ) 120 200 100 80 150 60 100 40 Eon Eoff Erec 20 0 Eon Eoff Erec 0 0 200 400 600 Collector current, IC - (A) 800 1000 Fig. 5 Typical switching energy vs collector current 6/10 50 2 4 8 6 10 Gate resistance, Rg - (ohms) 12 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DCM12-A000 1600 2000 Tj = 25˚C Tj = 125˚C 1400 Tcase = 125˚C Vge =15V 1800 R = 2.7Ohms g VF is measured at power busbars and not the auxiliary terminals 1600 1400 Collector current, IC - (A) Forward current, IF - (A) 1200 1000 800 600 1200 1000 800 600 400 400 200 200 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 3.5 Module IC Chip IC 200 Forward voltage, VF - (V) Fig. 7 Diode typical forward characteristics 400 600 800 1000 1200 Collector emitter voltage, Vce - (V) 1400 Fig. 8 Reverse bias safe operating area 1500 1000 Tj = 125˚C 900 1400 1300 Freewheel Diode 1200 800 1100 DC collector current, IC - (A) Reverse current, IR - (A) 700 1000 600 Antiparallel Diode 500 400 300 900 800 700 600 500 400 300 200 200 100 0 0 100 200 400 600 800 1000 Reverse voltage, VR - (V) 1200 Fig. 9 Diode reverse bias safe operating area 1400 0 0 20 40 60 80 120 140 160 Fig. 10 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 100 Case temperature, Tcase - (˚C) 7/10 DIM800DCM12-A000 Transient thermal impedance, Zth (j-c) - (°C/kW ) 100 Transistor Antiparallel Diode Freewheel Diode 10 1 0.1 0.001 IGBT 0.01 0.1 Pulse width, tp - (s) Ri (˚C/KW) ti (ms) Antiparallel Diode Ri (˚C/KW) ti (ms) Freewheel Diode Ri (˚C/KW) ti (ms) 1 0.56 0.12 1.23 0.11 0.82 0.11 2 4.00 3.89 9.26 4.24 6.17 4.24 1 3 5.64 47.15 12.96 48.75 8.64 48.75 10 4 7.81 257.21 16.53 256.75 11.02 256.75 Fig. 11 Transient thermal impedance 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DCM12-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1050g Module outine type code: D Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. 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