DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue PDS5692-2.0 FEATURES ■ 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5692-3.0 June 2004 KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 600A 1200A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS ■ Inverters ■ Motor Controllers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. 1(C) 2(E) 5(E1) 3(G1) 4(C1) The DIM600BSS12-A000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Fig. 1 Single switch circuit diagram ORDERING INFORMATION Order As: DIM600BSS12-A000 Note: When ordering, please use the whole part number. Outline type code: B (See package details for further information) Fig. 2 Module outline Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/9 DIM600BSS12-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1200 V ±20 V Continuous collector current Tcase = 80˚C 600 A IC(PK) Peak collector current 1ms, Tcase = 115˚C 1200 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 4166 W Diode I2t value VR = 0, tp = 10ms, Tvj = 125˚C 56 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V QPD Partial discharge - per module IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS 10 PC IC I2t 2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600BSS12-A000 THERMAL AND MECHANICAL RATINGS Internal insulation: Baseplate material: Creepage distance: Al2O3 Cu 20mm Thermal resistance - transistor 425 Test Conditions Parameter Symbol Rth(j-c) Clearance: 11mm CTI (Critical Tracking Index): Continuous dissipation - Min. Typ. Max. Units - - 30 ˚C/kW - - 67 ˚C/kW - - 15 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C 3 - 5 Nm Electrical connections - M6 2.5 - 5 Nm Electrical connections - M4 1.1 - 2 Nm - Storage temperature range Screw torque Mounting - M6 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/9 DIM600BSS12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 12 mA Gate leakage current VGE = ±20V, VCE = 0V - - 2 µA VGE(TH) Gate threshold voltage IC = 30mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat)† Collector-emitter saturation voltage VGE = 15V, IC = 600A - 2.2 2.7 V VGE = 15V, IC = 600A, , Tcase = 125˚C - 2.6 3.1 V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - - 600 A IFM Diode maximum forward current tp = 1ms - - 1200 A VF† Diode forward voltage IF = 600A - 2.2 2.5 V IF = 600A, Tcase = 125˚C - 2.3 2.6 V VCE = 25V, VGE = 0V, f = 1MHz - 100 - nF Cies Input capacitance LM Module inductance - - 20 - nH Internal transistor resistance - - 0.23 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 900V, I1 - 4100 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 3400 - A IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals L* is the circuit inductance + LM 4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600BSS12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 600A - 710 - ns Fall time VGE = ±15V - 70 - ns EOFF Turn-off energy loss VCE = 600V - 70 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.2Ω - 190 - ns L ~ 70nH - 70 - ns Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss - 60 - mJ Qg Gate charge - 6 - µC Qrr Diode reverse recovery charge IF = 500A, VR = 600V, - 80 - µC Irr Diode reverse current dIF/dt = 4800A/µs - 370 - A - 25 - mJ Min. Typ. Max. Units IC = 600A - 890 - ns Fall time VGE = ±15V - 100 - ns EOFF Turn-off energy loss VCE = 600V - 90 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.2Ω - 440 - ns L ~ 70nH - 85 - ns - 90 - mJ IF = 500A, VR = 600V, - 125 - µC dIF/dt = 4600A/µs - 390 - A - 48 - mJ EREC Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/9 DIM600BSS12-A000 TYPICAL CHARACTERISTICS 1200 1200 Common emitter Tcase = 25˚C Vce is measured at power busbars and not the auxiliary terminals 1000 800 Collector current, IC - (A) Collector current, IC - (A) 1000 Common emitter Tcase = 125˚C 600 400 200 0 0 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 3.5 800 600 400 200 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 0.5 0 0 4.0 Fig. 3 Typical output characteristics VGE = 10V VGE = 12V VGE = 15V VGE = 20V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-emitter voltage, Vce - (V) 70 105 Switching energy, Esw - (mJ) Tc = 125˚C, Vcc = 600V, 120 IC = 300A 60 50 40 30 20 90 75 60 45 30 Eon Eoff Erec 10 100 200 300 400 500 600 Collector current, IC - (A) Fig. 5 Typical switching energy vs collector current 6/9 5.0 135 Tc = 125˚C, Vcc = 600V, 80 Rg = 2.2 Ohms 0 0 4.5 Fig. 4 Typical output characteristics 90 Switching energy, Esw - (mJ) Vce is measured at power busbars and not the auxiliary terminals Eon Eoff Erec 15 0 1.3 2.6 3.3 4.0 Gate resistance, Rg - (Ohms) 4.6 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600BSS12-A000 1200 1800 Tj = 25˚C Tj = 125˚C VF is measured at power busbars and not the auxiliary terminals 1000 1600 800 Collector current, Ic - (A) Forward current, IF - (A) 1400 1200 1000 600 400 800 600 400 T case = 125˚C Vge =15V 200 Rg = 2.2 Ohms 200 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0 4.0 Module IC Chip IC 200 Forward voltage, VF - (V) Fig. 7 Diode typical forward characteristics 400 600 800 1000 1200 Collector-emitter voltage, Vce - (V) Fig. 8 Reverse bias safe operating area 700 100 Tcase =125˚C Diode Transient thermal impedance, Zth (j-c) - (°C/kW ) Reverse recovery current, Irr - (A) 600 500 400 300 200 100 Transistor 10 1 IGBT Diode 0 0 200 1400 400 600 800 1000 1200 Reverse voltage, VR - (V) Fig. 9 Diode reverse bias safe operating area 1400 0.1 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 0.7 0.11 1.49 0.10 0.1 Pulse width, tp - (s) 3 14.61 45.60 24.74 38.58 1 4 9.84 143.02 30.01 113.97 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 2 3.87 3.14 8.42 3.21 7/9 DIM600BSS12-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 1(C) 2(E) 5(E1) 3(G1) 4(C1) Nominal weight: 475g Module outline type code: B Fig. 11 Package details 8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97 Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. 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