Excelics EFC240D PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 18.5dB TYPICAL POWER GAIN AT 2GHz HIGH BVgd FOR 10V BIAS 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 40mA PER BIN RANGE 410 104 D 620 155 75 S 100 ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS G S 94 Chip Thickness: 75 ± 13 microns All Dimensions In Microns MIN TYP Output Power at 1dB Compression f= 2GHz Vds=10V, Ids=50% Idss f= 4 GHz Gain at 1dB Compression f= 2GHz Vds=10V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=10V, Ids=50% Idss f=2GHz 29.0 31.0 31.0 18.5 13.5 Idss Saturated Drain Current Vds=3V, Vgs=0V 320 480 Gm Transconductance Vds=3V, Vgs=0V 200 280 Vp Pinch-off Voltage Vds=3V, Ids=6mA BVgd Drain Breakdown Voltage Igd=2.4mA -15 -20 V BVgs Source Breakdown Voltage Igs=2.4mA -10 -17 V Rth Thermal Resistance (Au-Sn Eutectic Attach) P1dB G1dB PAE PARAMETERS/TEST CONDITIONS 72 16.0 MAX dBm dB 45 -2.5 % 720 -4.0 23 MAXIMUM RATINGS AT 25 C PARAMETERS ABSOLUTE1 mA mS O SYMBOLS UNIT CONTINUOUS2 Drain-Source Voltage 14V 10V Vds Gate-Source Voltage -8V -4.5V Vgs Drain Current Idss 500mA Ids Forward Gate Current 60mA 10mA Igsf Input Power 29dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch o Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 6.0W 5.0W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com V o C/W EFC240D PRELIMINARY DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS 10V, 1/2 Idss Freq GHz 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 Note: S11 Mag 0.962 0.933 0.859 0.860 0.849 0.848 0.846 0.846 0.849 0.856 0.853 0.855 0.857 0.861 0.861 0.865 0.869 0.873 0.877 0.876 S11 S21 Ang Mag -66.3 11.912 -106.1 8.577 -121.0 6.591 -136.6 5.272 -147.5 4.344 -155.8 3.689 -162.2 3.195 -167.3 2.809 -172.0 2.472 -176.1 2.229 -179.3 2.024 177.4 1.852 174.4 1.708 171.7 1.577 169.3 1.466 167.0 1.375 165.2 1.288 163.5 1.213 161.9 1.146 160.4 1.085 S21 Ang 141.2 117.9 108.2 97.9 89.7 82.9 76.9 71.5 66.5 61.8 57.2 52.9 48.7 44.8 41.0 37.2 33.7 30.1 26.8 23.3 S12 Mag 0.025 0.036 0.042 0.044 0.046 0.047 0.047 0.048 0.047 0.048 0.048 0.048 0.048 0.049 0.049 0.049 0.050 0.050 0.052 0.053 S12 Ang 55.9 36.9 32.6 26.7 22.6 20.8 19.4 18.7 18.7 18.6 18.8 20.4 19.7 20.7 20.7 21.7 22.1 24.0 24.7 25.4 S22 Mag 0.239 0.337 0.303 0.330 0.343 0.354 0.365 0.373 0.389 0.399 0.411 0.422 0.434 0.444 0.457 0.468 0.477 0.487 0.500 0.509 The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 20 mils each; 2 drain wires, 12 mils each; 4 source wires, 7 mils each. S22 Ang -129.1 -144.0 -146.3 -151.9 -155.1 -157.6 -159.4 -160.6 -162.9 -163.5 -164.5 -165.6 -165.8 -166.5 -167.7 -168.4 -169.7 -171.2 -172.4 -174.2