EXCELICS EFC480C

Excelics
EFC480C
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
•
•
•
•
•
•
•
+33.5dBm TYPICAL OUTPUT POWER
18.0dB TYPICAL POWER GAIN AT 2GHz
High BVgd FOR 10V BIAS
0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 80mA PER BIN RANGE
O
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
SYMBOLS
P1dB
G1dB
PAE
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
f= 4GHz
f= 2GHz
f= 4GHz
'
'
6
*
6
*
6
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
TYP
32.0
33.5
33.5
18.0
12.5
16.0
f= 2GHz
MAX
UNIT
dBm
dB
%
40
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
640
960
Gm
Transconductance
Vds=3V, Vgs=0V
200
560
Vp
Pinch-off Voltage
Vds=3V, Ids=10mA
BVgd
Drain Breakdown Voltage Igd=4.8mA
-15
-20
V
BVgs
Source Breakdown Voltage Igs=4.8mA
-10
-17
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
-2.5
1440
mS
-4.0
12
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE 1
mA
CONTINUOUS2
Drain-Source Voltage
14V
10V
Gate-Source Voltage
-8V
-4.5V
Drain Current
Idss
960mA
Forward Gate Current
120mA
20mA
Input Power
32dBm
@3dB Compression
Pin
o
Channel Temperature
175 C
150oC
Tch
o
Storage Temperature
-65/175 C
-65/150oC
Tstg
Total Power Dissipation
11.4 W
9.5 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Vds
Vgs
Ids
Igsf
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
V
o
C/W
EFC480C
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
Freq
GHz
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
8.500
9.000
9.500
10.000
Note:
10V, 1/2 Idss
---S11-----S21--Mag
Ang
Mag Ang
0.937 -106.2 10.161 120.8
0.897 -134.9 6.389 104.7
0.897 -151.8 4.443 93.5
0.897 -161.0 3.370 85.4
0.898 -167.2 2.695 79.2
0.895 -171.8 2.231 73.9
0.890 -175.4 1.894 69.4
0.850 -176.6 1.654 66.9
0.901 177.7 1.535 59.9
0.899 174.5 1.357 55.2
0.900 172.5 1.208 51.4
0.901 170.8 1.087 48.2
0.902 169.6 0.999 45.8
0.893 168.8 0.941 43.3
0.904 170.7 0.916 39.2
0.919 169.5 0.840 34.2
0.918 169.2 0.783 31.0
0.924 168.7 0.729 27.9
0.927 168.0 0.687 24.5
0.932 167.3 0.647 22.3
---S12--Mag Ang
0.022 35.8
0.028 26.4
0.028 21.5
0.029 19.0
0.030 20.2
0.030 19.5
0.030 20.9
0.026 27.6
0.032 23.1
0.031 25.8
0.031 28.1
0.031 30.4
0.032 32.0
0.033 37.1
0.037 34.8
0.036 35.0
0.038 36.6
0.037 37.6
0.038 39.8
0.040 42.4
---S22--Mag
Ang
0.518 -166.8
0.505 -168.3
0.524 -171.2
0.533 -173.0
0.539 -173.8
0.542 -174.2
0.542 -173.9
0.560 -172.2
0.607 -169.5
0.617 -170.8
0.620 -171.8
0.619 -172.8
0.616 -172.6
0.637 -171.2
0.669 -172.8
0.681 -175.0
0.693 -176.9
0.701 -178.6
0.706 -179.3
0.716 179.8
The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 20 mils each; 2 drain wires, 12 mils each; 6 source wires, 7 mils each.