EXCELICS EFA960B

Excelics
EFA960B
DATA SHEET
Low Distortion GaAs Power FET
•
•
•
•
•
•
+36.5dBm TYPICAL OUTPUT POWER
16.0dB TYPICAL POWER GAIN AT 2GHz
0.5 X 9600 MICRON RECESSED
“MUSHROOM” GATE
Si3N4 PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 160mA PER BIN RANGE
P1dB
G1dB
PAE
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'
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
'
'
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
6
*
6
*
6
*
6
*
6
Chip Thickness: 50 ± 10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
MIN
TYP
35.0
36.5
36.5
16.5
11.5
15.0
MAX
UNIT
dBm
dB
%
34
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
1600
2720
Gm
Transconductance
Vds=3V, Vgs=0V
1100
1450
Vp
Pinch-off Voltage
Vds=3V, Ids=25mA
BVgd
Drain Breakdown Voltage Igd=9.6mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=9.6mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
-2.0
3520
mS
-3.5
5
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE 1
mA
CONTINUOUS2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-4V
Vgs
Drain Current
Idss
2.8A
Ids
Forward Gate Current
240mA
40mA
Igsf
Input Power
35dBm
@3dB Compression
Pin
o
Channel Temperature
175 C
150oC
Tch
Storage Temperature
-65/175oC
-65/150oC
Tstg
Total Power Dissipation
27 W
23 W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
V
o
C/W
EFA960B
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
FREQ
(GHz)
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
8.500
9.000
9.500
10.000
Note:
--- S11 --MAG ANG
0.963 -150.4
0.962 -165.8
0.961 -171.5
0.961 -174.6
0.962 -176.7
0.962 -178.3
0.962 -179.6
0.962 179.2
0.963 178.2
0.963 177.3
0.964 176.4
0.964 175.6
0.965 174.8
0.965 174.1
0.966 173.3
0.966 172.6
0.967 171.9
0.968 171.2
0.968 170.5
0.969 169.8
8V, 1/2 Idss
--- S21 --MAG ANG
6.232 100.8
3.195
89.5
2.140
83.1
1.608
77.9
1.287
73.2
1.072
68.9
0.919
64.7
0.803
60.7
0.713
56.8
0.641
53.0
0.582
49.3
0.532
45.8
0.490
42.3
0.453
38.9
0.421
35.7
0.392
32.5
0.367
29.5
0.344
26.6
0.324
23.7
0.305
21.0
--- S12 --MAG
ANG
0.015
20.2
0.015
18.3
0.016
21.0
0.016
24.7
0.017
28.6
0.018
32.5
0.018
36.2
0.019
39.7
0.020
42.9
0.021
45.9
0.022
48.6
0.024
51.0
0.025
53.2
0.026
55.2
0.028
56.9
0.029
58.5
0.031
59.9
0.033
61.1
0.034
62.2
0.036
63.2
--- S22 --MAG ANG
0.741 -176.3
0.750 -177.8
0.753 -178.3
0.755 -178.5
0.758 -178.5
0.761 -178.5
0.764 -178.6
0.768 -178.6
0.772 -178.6
0.776 -178.6
0.781 -178.7
0.786 -178.8
0.791 -178.9
0.797 -179.0
0.802 -179.2
0.808 -179.4
0.814 -179.6
0.819 -179.8
0.825 179.9
0.831 179.6
The data included 0.7 mils diameter Au bonding wires:
4 gate wires, 20 mils each; 4 drain wires, 12 mils each; 10 source wires, 7 mils each.