Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 60mA PER BIN RANGE 104 D 72 620 155 75 S 100 ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS G S 94 Chip Thickness: 75 ± 13 microns All Dimensions In Microns MIN TYP Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz 31.0 33.0 33.0 20.0 15.0 Idss Saturated Drain Current Vds=3V, Vgs=0V 440 720 Gm Transconductance Vds=3V, Vgs=0V 480 760 Vp Pinch-off Voltage Vds=3V, Ids=6mA BVgd Drain Breakdown Voltage Igd=2.4mA -11 -15 V BVgs Source Breakdown Voltage Igs=2.4mA -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) P1dB G1dB PAE PARAMETERS/TEST CONDITIONS 18.5 MAX dBm dB % 55 -1.0 940 PARAMETERS ABSOLUTE1 mA mS -2.5 23 MAXIMUM RATINGS AT 25OC SYMBOLS UNIT CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -3V Vgs Drain Current Idss 620mA Ids Forward Gate Current 120mA 20mA Igsf Input Power 30dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 6.0 W 5.0W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com V o C/W EPA240D DATA SHEET High Efficiency Heterojunction Power FET S-PARAMETERS FREQ (GHz) 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 Note: 8V, 1/2 Idss --- S11 ----- S21 --MAG ANG MAG ANG 0.932 -84.1 15.622 132.6 0.885 -124.4 10.061 109.7 0.868 -144.6 7.154 97.1 0.861 -156.7 5.496 88.3 0.859 -165.1 4.443 81.3 0.858 -171.6 3.720 75.2 0.859 -176.9 3.194 69.7 0.860 178.6 2.794 64.5 0.862 174.6 2.478 59.5 0.864 171.0 2.223 54.7 0.867 167.6 2.012 50.0 0.870 164.4 1.833 45.4 0.873 161.4 1.680 40.9 0.877 158.5 1.546 36.5 0.880 155.8 1.428 32.2 0.884 153.1 1.323 27.9 0.888 150.5 1.229 23.8 0.892 147.9 1.143 19.7 0.896 145.4 1.064 15.7 0.900 143.0 0.993 11.8 --- S12 --MAG ANG 0.023 49.4 0.029 33.4 0.031 27.8 0.032 26.3 0.033 26.8 0.034 28.5 0.034 30.9 0.035 33.8 0.037 36.8 0.039 39.7 0.041 42.4 0.044 44.7 0.048 46.5 0.051 47.8 0.055 48.5 0.060 48.7 0.065 48.5 0.069 47.8 0.074 46.8 0.079 45.5 --- S22 --MAG ANG 0.267 -50.6 0.194 -76.5 0.165 -92.0 0.156 -103.5 0.158 -113.0 0.166 -121.5 0.179 -129.2 0.194 -136.4 0.212 -143.3 0.232 -149.8 0.255 -156.0 0.279 -162.0 0.304 -167.8 0.331 -173.5 0.359 -178.9 0.388 175.8 0.417 170.6 0.447 165.6 0.477 160.7 0.506 155.9 The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 20 mils each; 1 drain wires, 12 mils each; 4 source wires, 7 mils each.