http://www.fujielectric.com/products/semiconductor/ 6MBP200VEA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 200A / IPM Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs • Low power loss and soft switching • High performance and high reliability IGBT with overheating protection • Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (TC =25°C, VCC =15V unless otherwise specified) Symbol Min. Max. Units Collector-Emitter Voltage (*1) Short Circuit Voltage VCES VSC IC ICP -IC PC IC ICP IF PC VCC Vin VALM IALM Tj Topr Tstg Tsol Viso 0 400 -0.5 -0.5 -0.5 -20 -40 - 1200 800 200 400 200 961 20 VCC+0.5 VCC 20 150 110 125 260 AC2500 V V A A A W A A A W V V V mA °C °C °C °C Vrms - 3.5 Nm Brake Inverter Items Collector Current Collector Power Dissipation Collector Current DC 1ms Duty=100% (*2) 1 device (*3) DC 1ms Forward Current of Diode Collector Power Dissipation 1 device (*3) Supply Voltage of Pre-Driver (*4) Input Signal Voltage (*5) Alarm Signal Voltage (*6) Alarm Signal Current (*7) Junction Temperature Operating Case Temperature Storage Temperature Solder Temperature (*8) Isolating Voltage (*9) Terminal (M5) Screw Torque Mounting (M5) - Note *1: VCES shall be applied to the input voltage between all Collector and Emitter. [ P1-(U,V,W,B) , P2-(U,V,W,B) , (U,V,W,B)-N1 , (U,V,W,B)-N2 ] Note *2: Duty=125°C/Rth(j-c)D/(I F×VF Max.)×100 Note *3: PC=125°C/Rth(j-c)Q (Inverter & Brake) Note *4: VCC shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 14 and 13. Note *5: Vin shall be applied to the input voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 15~18 and 13. Note *6: VALM shall be applied to the voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 19 and 13. Note *7: I ALM shall be applied to the input current to terminal No.4, 8, 12 and 19. Note *8: Immersion time 10±1sec. 1 time Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test. 1 6MBP200VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical Characteristics (Tj =25°C, VCC =15V unless otherwise specified) Items Brake Inverter Collector Current at off signal input Symbol Conditions ICES VCE=1200V Terminal Chip Terminal Chip Collector-Emitter saturation voltage (*10) VCE(sat) IC=200A Forward voltage of FWD (*10) VF IF=200A Collector Current at off signal input ICES - Collector-Emitter saturation voltage (*10) VCE(sat) - Forward voltage of FWD (*10) VF - ton toff VDC=600V, Tj=125°C, IC=200A trr VDC=600V, IF=200A Iccp Iccn Vinth(on) Vinth(off) Switching Frequency= 0-15kHz TC=-20~110°C IOC Tj=125°C tdOC tSC TjOH TjH VUV VH tALM(OC) tALM(UV) tALM(TjOH) RALM Tj=125°C Tj=125°C Surface of IGBT Chips Switching time Supply current of P-side pre-driver (per one unit) Supply current of N-side pre-driver Input signal threshold voltage Inverter Brake Over Current Protection Delay time Short Circuit Protection Delay time IGBT Chips Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Over Current Protection Level Alarm Signal Hold Time Resistance for current limit Vin-GND ALM-GND TC=-20~110°C ON OFF VCC 10V Min. Typ. Max. Units 1.1 - 1.70 2.10 - 1.0 2.30 2.75 2.1 mA V V V V mA V V V V µs µs - - 0.3 µs 1.2 1.5 300 150 11.0 0.2 1.0 2.5 5.0 960 1.4 1.7 5 2 20 0.5 2.0 4.0 8.0 1265 42 126 1.6 1.9 3 12.5 2.4 4.9 11.0 1570 mA mA V V A A µs µs °C °C V V ms ms ms Ω Note *10: The Max value is a case where it measures from P2-(U,V,W,B) , (U,V,W,B)-N2. Thermal Characteristics (TC = 25ºC) Items Inverter Junction to Case Thermal Resistance (*11) Brake Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)Q Rth(j-c)D Rth(c-f) IGBT FWD IGBT FWD Case to Fin Thermal Resistance with Compound Min. - Typ. 0.05 Max. 0.130 0.195 - Units °C/W °C/W °C/W °C/W °C/W Note *11: For 1device, the measurement point of the case is just under the chip. Noise Immunity (VDC =600V, VCC =15V) Items Conditions Min. Typ. Max. Units Common mode rectangular noise Pulse width 1μs, polarity ±10 min. Judge : no over-current, no miss operating ±2.0 - - kV Recommended Operating Conditions Items DC Bus Voltage Power Supply Voltage of Pre-Driver Switching frequency of IPM Arm shoot through blocking time for IPM's input signal Screw Torque (M5) Symbol VDC VCC fSW tdead - Min. 13.5 1.0 2.5 Typ. 15.0 - Max. 800 16.5 20 3.5 Units V V kHz µs Nm Symbol Wt Min. - Typ. 980 Max. - Units g Weight Items Weight 2 6MBP200VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Block Diagram VCCU ③ P1 VinU ② ALMU ④ P2 Pre-Driver RALM U GNDU ① VCCV ⑦ VinV ⑥ ALM V ⑧ Pre-Driver RALM GNDV ⑤ V VCCW ⑪ VinW ⑩ ALM W ⑫ Pre-Driver RALM W GNDW ⑨ VCC ⑭ VinX ⑯ Pre-Driver GND ⑬ VinY ⑰ Pre-Driver VinZ ⑱ Pre-Driver B ⑮ N1 ALM ⑲ N2 RALM Pre-drivers include following functions 1. Amplifier for driver 2. Short circuit protection 3. Under voltage lockout circuit 4. Over current protection 5. IGBT chip over heating protection 3 6MBP200VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Power supply current vs. Switching frequency Tj= 25°C(typ.) Input signal threshold voltage vs. Power supply voltage (typ.) 200 3.0 TC=25~125°C 2.5 Input signal threshold voltage : Vinth(on),Vinth(off) [ V ] Power supply current : ICC [ mA ] Low-side High-side VCC=17V VCC=15V VCC=13V 150 100 VCC=17V VCC=15V VCC=13V 50 2.0 Vinth(off) 1.5 Vinth(on) 1.0 0.5 0 0.0 0 5 10 15 20 Switchig frequency : fsw [ kHz ] 12 25 13 15 1 12 0.8 Under voltage hysterisis : VH [ V ] Under voltage : VUV [ V ] Under voltage vs. Junction temperature (typ.) 9 6 3 14 15 16 17 Power supply voltage : VCC [ V ] 18 Under voltage hysterisis vs. Junction temperature (typ.) 0.6 0.4 0.2 0 0 0 20 40 60 80 100 Junction temperature : Tj [ °C ] 120 0 140 20 40 60 80 100 120 140 Junction temperature : Tj [ °C ] Alarm hold time vs. Power supply voltage (typ.) 10 Over heating characteristics TjOH,TjH vs. VCC (typ.) 200 TjOH 8 Over heating protection : TjOH [°C] OH hysterisis : TjH [°C] Alarm hold time : tALM [ msec ] tALM(TjOH) 6 4 tALM(OC) 2 150 100 50 TjH 0 0 12 13 14 15 16 17 12 18 13 14 15 16 Power supply voltage : VCC [ V ] Power supply voltage : VCC [ V ] 4 17 18 6MBP200VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Inverter Collector current vs. Collector-Emitter voltage Tj=25°C[Chip] (typ.) 400 Collector current vs. Collector-Emitter voltage Tj=25°C[Terminal] (typ.) 400 VCC=17V VCC=15V VCC=13V Collector current : IC [ A ] Collector current : IC [ A ] VCC=15V 300 200 100 0 VCC=17V 300 VCC=13V 200 100 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 Collector-Emitter voltage : VCE [ V ] Collector-Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage Tj=125°C[Chip] (typ.) Collector current vs. Collector-Emitter voltage Tj=125°C[Terminal] (typ.) 400 300 VCC=17V VCC=13V Collector current : IC [ A ] Collector current : IC [ A ] 3.5 400 VCC=15V 200 100 0 0.0 VCC=15V 300 VCC=17V VCC=13V 200 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Collector-Emitter voltage : VCE [ V ] Collector-Emitter voltage : VCE [ V ] Forward current vs. Forward voltage [Chip] (typ.) Forward current vs. Forward voltage [Terminal] (typ.) 400 3.5 400 Tj=125°C 300 Tj=25°C Forward current : IF [ A ] Forward current : IF [ A ] 3.0 200 100 0 300 Tj=25°C Tj=125°C 200 100 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 Forward voltage : VF [ V ] 0.5 1.0 1.5 2.0 2.5 Forward voltage : VF [ V ] 5 3.0 3.5 6MBP200VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching Loss vs. Collector Current (typ.) VDC=600V,VCC=15V,Tj=125°C 60 60 50 50 Switching loss : Eon,Eoff,Err [mJ/cycle] Switching loss : Eon,Eoff,Err [mJ/cycle] Switching Loss vs. Collector Current (typ.) VDC=600V,VCC=15V,Tj=25°C Eon 40 30 20 Eoff 10 Eon 40 30 Eoff 20 10 Err Err 0 0 0 600 100 200 300 0 400 Reversed biased safe operating area VCC=15V,Tj≦125°C[Main Terminal] (min.) Transient thermal resistance (max.) Thermal resistance : Rth(j-c) [ °C/W ] Collector current : IC [ A ] 200 RBSOA (Repetitive pulse) 400 600 800 1000 1200 1 FWD 0.1 IGBT 0.01 0.001 0 200 400 10 300 100 1400 0.01 0.1 1 Collector-Emitter voltage : VCE [ V ] Pulse width : PW [ sec ] Power derating for IGBT (max.) [per device] Power derating for FWD (max.) [per device] 800 1000 Collector Power Dissipation : PC [ W ] Collector Power Dissipation : PC [ W ] 300 Collector current : IC [ A ] 400 1200 200 Collector current : IC [ A ] 500 0 100 800 600 400 200 0 10 600 400 200 0 0 50 100 150 0 Case Temperature : TC [ °C ] 50 100 Case Temperature : TC [ °C ] 6 150 6MBP200VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) VDC=600V,VCC=15V,Tj=25°C Switching time vs. Collector current (typ.) VDC=600V,VCC=15V,Tj=125°C 10000 Switching time : ton,toff,tf [ nsec ] Switching time : ton,toff,tf [ nsec ] 10000 ton toff 1000 100 tf 10 toff 1000 100 tf 10 1000 100 200 300 400 0 100 200 300 400 Collector current : IC [ A ] Collector current : IC [ A ] Reverse recovery characteristics (typ.) trr,Irr vs. If Over current protection vs. Junction temperature (typ.) VCC=15V 1000 Over current protection level : IOC [ A ] 0 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] ton trr Tj=125°C trr Tj=25°C Irr Tj=125°C Irr Tj=25°C 100 10 800 600 400 200 0 1 0 100 200 300 0 400 Forward current : IF [ A ] 20 40 60 80 100 Junction temperature : Tj [ °C ] Outline Drawings, mm 7 120 140 6MBP200VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2012. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. 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