http://www.fujielectric.com/products/semiconductor/ 6MBP50VBA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 50A / IPM Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs • Low power loss and soft switching • Compatible with existing IPM-N series packages • High performance and high reliability IGBT with overheating protection • Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (TC =25ºC, VCC =15V unless otherwise specified) Items Symbol Min. Max. Units Collector-Emitter Voltage (*1) Short Circuit Voltage VCES VSC Ic Ic pulse -Ic Pc VCC Vin VALM IALM Tj Topr Tstg Tsol Viso - 0 200 -0.5 -0.5 -0.5 -20 -40 - 1200 800 50 100 50 255 20 VCC+0.5 VCC 20 150 110 125 260 AC2500 1.7 V V A A A W V V V mA ºC ºC ºC ºC Vrms Nm Collector Current DC 1ms Duty=100% (*2) 1 device (*3) Collector Power Dissipation Supply Voltage of Pre-Driver (*4) Input Signal Voltage (*5) Alarm Signal Voltage (*6) Alarm Signal Current (*7) Junction Temperature Operating Case Temperature Storage Temperature Solder Temperature (*8) Isolating Voltage (*9) Screw Torque Mounting (M4) Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W)-N. Note *2: Duty=125ºC/Rth(j-c)D /(I F×VF Max.)×100 Note *3: PC=125ºC/Rth(j-c)Q Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13. Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16~18 and 13. Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13. Note *7: I ALM shall be applied to the input current to terminal No.2,6,10 and 19. Note *8: Immersion time 10±1sec. 1time. Note *9: Terminal to base, 50/60Hz sine wave 1minute. 1 6MBP50VBA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical Characteristics (Tj=25ºC, VCC=15V unless otherwise specified) Items Inverter Collector Current at off signal input Symbol Conditions ICES VCE=1200V Terminal Chip Terminal Chip Collector-Emitter saturation voltage VCE(sat) IC=50A Forward voltage of FWD VF IF=50A ton toff VDC=600V, Tj=125ºC Ic=50A trr VDC=600V IF=50A Switching time Supply current of P-side pre-driver (per one unit) Supply current of N-side pre-driver Iccp Iccn Vinth(on) Input signal threshold voltage Vinth(off) Over Current Protection Level IOC Over Current Protection Delay time tdOC Short Circuit Protection Delay time tSC IGBT Chips Over Heating Protection Temperature Level TjOH Over Heating Protection Hysteresis TjH Under Voltage Protection Level VUV Under Voltage Protection Hysteresis VH tALM(OC) tALM(UV) Alarm Signal Hold Time tALM(TjOH) Resistance for current limit RALM Switching Frequency= 0-15kHz Tc=-20~110ºC Vin-GND ON OFF Tj=125ºC Tj=125ºC Tj=125ºC Surface of IGBT Chips ALM-GND Tc=-20~110ºC VCC 10V Min. Typ. Max. Units 1.1 - 1.70 2.10 - 1.0 2.30 2.60 2.1 mA V V V V µs µs - - 0.3 µs 1.2 1.5 75 150 11.0 0.2 1.0 2.5 5.0 960 1.4 1.7 5 2 20 0.5 2.0 4.0 8.0 1265 15 47 1.6 1.9 3 12.5 2.4 4.9 11.0 1570 mA mA V V A µs µs ºC ºC V V ms ms ms Ω Thermal Characteristics (TC = 25ºC) Items Junction to Case Thermal Resistance (*10) Inverter Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) IGBT FWD Case to Fin Thermal Resistance with Compound Min. - Typ. 0.05 Max. 0.49 0.75 - Units °C/W °C/W °C/W Note *10: For 1device, the measurement point of the case is just under the chip. Noise Immunity (VDC=300V, VCC=15V) Items Conditions Min. Typ. Max. Units Common mode rectangular noise Pulse width 1μs, polarity ±, 10 minute Judge : no over-current, no miss operating ±2.0 - - kV Recommended Operating Conditions Items DC Bus Voltage Power Supply Voltage of Pre-Driver Arm shoot through blocking time for IPM's input signal Screw Torque (M4) Symbol VDC VCC tdead - Min. 13.5 1.0 1.3 2 Typ. 15.0 - Max. 800 16.5 1.7 Units V V µs Nm 6MBP50VBA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Block Diagram P VccU VinU ALMU Pre-Driver R ALM U GNDU VccV VinV ALM V Pre-Driver R ALM GNDV V VccW VinW ALM W Pre-Driver R ALM GNDW W Vcc VinX Pre-Driver GND VinY Pre-Driver VinZ ALM Pre-Driver N R ALM Pre-drivers include following functions 1. Amplifier for driver 2. Short circuit protection 3. Under voltage lockout circuit 4. Over current protection 5. IGBT chip over heating protection 3 6MBP50VBA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Power supply current vs. Switching frequency Tj=25ºC (typ.) 3 N-side P-side Vcc=17V Vcc=15V Vcc=13V Input signal threshold voltage : Vinth (on), Vinth (off) [V] 40 Tc=25~125ºC 2.5 30 20 Vcc=17V Vcc=15V Vcc=13V 10 0 0 5 10 15 20 Vinth (off) 1.5 Vinth (on) 1 0 25 12 13 14 15 16 17 Switchig frequency : fsw [kHz] Power supply voltage : Vcc [V] Under voltage vs. Junction temperature (typ.) Under voltage hysterisis vs. Junction temperature (typ.) 15 1 12 0.8 9 6 3 0 18 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 0 20 40 60 80 100 Junction temperature : Tj [ºC] Junction temperature : Tj [ºC] Alarm hold time vs. Power supply voltage (typ.) Over heating characteristics TjoH, TjH vs. Vcc (typ.) 10 200 Over heating protection : TjoH [ºC] OH hysterisis : TjH [ºC] 6 4 tALM(OC) 2 120 140 TjoH tALM(TjOH) 8 Alarm hold time : TALM [msec] 2 0.5 Under voltage hysterisis : VH [V] Power supply current : Icc [mA] 50 Under voltage : VUV [V] Input signal threshold voltage vs. Power supply boltage (typ.) 150 100 50 TjH 0 0 12 13 14 15 16 17 12 18 Power supply voltage : Vcc [V] 13 14 15 16 Power supply voltage : Vcc [V] 4 17 18 6MBP50VBA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Collector current vs. collector-Emitter voltage Tj=25ºC [Chip] (typ.) Collector current vs. collector-Emitter voltage Tj=25ºC [Terminal] (typ.) 100 100 Vcc=13V Vcc=17V 60 40 20 0 0 0.5 1 1.5 2 Vcc=13V 40 2.5 0 3 0 0.5 1 1.5 2 2.5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector current vs. collector-Emitter voltage Tj=125ºC [Chip] (typ.) Collector current vs. collector-Emitter voltage Tj=125ºC [Terminal] (typ.) 3 100 80 80 Vcc=15V Collector current : Ic [A] Collector current : Ic [A] Vcc=17V 60 20 100 Vcc=17V Vcc=13V 60 40 Vcc=15V Vcc=17V 60 Vcc=13V 40 20 20 0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Forward current vs. Forward voltage [Chip] (typ.) Forward current vs. Forward voltage [Terminal] (typ.) 100 100 80 80 Forward current : IF [A] Forward current : IF [A] Vcc=15V 80 Vcc=15V Collector current : Ic [A] Collector current : Ic [A] 80 Tj=25ºC Tj=125ºC 60 40 20 3 Tj=25ºC 60 Tj=125ºC 40 20 0 0 0 0.5 1 1.5 2 2.5 3 0 Forward voltage : VF [V] 0.5 1 1.5 2 Forward voltage : VF [V] 5 2.5 3 6MBP50VBA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching Loss vs. Collector Current (typ.) VDC=300V, Vcc=15V, Tj=25ºC Switching Loss vs. Collector Current (typ.) VDC=300V, Vcc=15V, Tj=125ºC 12 Switching loss : Eon, Eoff, Err [mJ/cycle] Switching loss : Eon, Eoff, Err [mJ/cycle] 12 10 Eon 8 6 4 Eoff 2 Err 0 20 40 60 6 Eoff 4 Err 2 80 0 20 40 60 Collector Current : Ic [A] Collector Current : Ic [A] Reversed biased safe operating area Vcc=15V, Tj 125ºC [Main Terminal] (min.) Transient thermal resistance (max.) 150 100 RBSOA (Repetitive pulse) 50 80 10 Thermal resistance : Rth(j-c) [ºC/W] 200 Collector current : IC [A] 8 0 0 1 FWD IGBT 0.1 0.01 0 0 300 600 900 1200 1500 0.001 0.01 0.1 1 Collector-Emitter voltage : VCE [V] Pulse width : Pw [sec] Power derating for IGBT (max.) [per device] Power derating for FWD(max.) [per device] 10 300 Collector Power Dissipation : Pc [W] 300 Collector Power Dissipation : Pc [W] Eon 10 200 100 0 200 100 0 0 50 100 150 0 Case Temperature : Tc [ºC] 50 100 Case Temperature : Tc [ºC] 6 150 6MBP50VBA120-50 Switching time vs. Collector current (typ.) VDC=300V, Vcc=15V, Tj=25ºC 10000 ton toff 1000 100 tf 10 0 20 40 60 Switching time vs. Collector current (typ.) VDC=300V, Vcc=15V, Tj=125ºC 10000 Switching time : ton, toff, tr [nsec] Switching time : ton, toff, tr [nsec] IGBT Modules http://www.fujielectric.com/products/semiconductor/ ton 1000 toff 100 tf 10 0 80 20 Collector current : Ic [A] Reverse recovery characteristics (typ.) trr, Irr vs. If trr Tj=125ºC trr Tj=25ºC 100 Irr Tj=125ºC Irr Tj=25ºC 10 1 0 20 40 60 80 60 Over current protection vs. Junction temperature (typ.) Vcc=15V 200 Over current protection level : Ioc [A] Reverse recovery current : Irr [A] Reverse recovery time : trr [nsec] 1000 40 Collector current : Ic [A] 150 100 50 0 80 0 20 40 60 80 100 Junction temperature : Tj [ºC] Forward current : IF [A] Outline Drawings, mm 7 120 140 6MBP50VBA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. 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