FUJI 7MBP150VEA120-50

http://www.fujielectric.com/products/semiconductor/
7MBP150VEA120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 150A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC =25ºC, VCC =15V unless otherwise specified)
Symbol
Min.
Max.
Units
Collector-Emitter Voltage (*1)
Short Circuit Voltage
VCES
0
400
-0.5
-0.5
-0.5
-20
-40
-
1200
800
150
300
150
781
75
150
75
520
20
VCC+0.5
VCC
20
150
110
125
260
AC2500
V
V
A
A
A
W
A
A
A
W
V
V
V
mA
ºC
ºC
ºC
ºC
Vrms
-
3.5
Nm
Brake
Inverter
Items
Collector Current
Collector Power Dissipation
Collector Current
VSC
DC
1ms
Duty=100% (*2)
1 device (*3)
DC
1ms
Forward Current of Diode
Collector Power Dissipation 1 device (*3)
Supply Voltage of Pre-Driver (*4)
Input Signal Voltage (*5)
Alarm Signal Voltage (*6)
Alarm Signal Current (*7)
Junction Temperature
Operating Case Temperature
Storage Temperature
Solder Temperature (*8)
Isolating Voltage (*9)
Terminal (M5)
Screw Torque
Mounting (M5)
IC
Icp
-IC
PC
IC
Icp
IF
PC
VCC
Vin
VALM
IALM
Tj
Topr
Tstg
Tsol
Viso
-
Note *1: VCES shall be applied to the input voltage between all Collector and Emitter. [ P1- (U, V, W ,B), P2- (U, V, W, B), (U ,V ,W ,B)-N1, (U, V, W, B)-N2 ]
Note *2: Duty=125ºC/Rth(j-c)D /(I F×VF Max.)×100
Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake)
Note *4: VCC shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 15~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 19 and 13.
Note *7: I ALM shall be applied to the input current to terminal No.4, 8, 12 and 19.
Note *8: Immersion time 10±1 sec. 1 time.
Note *9: Terminal to base, 50/60Hz sine wave 1 min. All terminals should be connected together during the test.
1
7MBP150VEA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical Characteristics (Tj =25ºC, VCC =15V unless otherwise specified)
Items
Brake
Inverter
Collector Current at off signal input
Symbol
Conditions
ICES
VCE=1200V
Collector-Emitter saturation voltage (*10)
VCE(sat)
IC =150A
Forward voltage of FWD (*10)
VF
IF=150A
Collector Current at off signal input
ICES
VCE=1200V
Collector-Emitter saturation voltage (*10)
VCE(sat)
IC =75A
Forward voltage of FWD (*10)
VF
IF=75A
ton
Supply current of P-side pre-driver (per one unit)
Supply current of N-side pre-driver
Switching Frequency= 0-15kHz
TC =-20~110ºC
Vin -GND
Tj =125ºC
tdOC
Tj =125ºC
tSC
Tj =125ºC
TjOH
Surface of IGBT Chips
TjH
VUV
VH
tALM(UV)
tALM(TjOH)
Resistance for current limit
ON
OFF
IOC
tALM(OC)
Alarm Signal Hold Time
Terminal
Chip
Iccp
Vinth(off)
Inverter
Brake
Over Current Protection Delay time
Short Circuit Protection Delay time
IGBT Chips Over Heating Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Terminal
Chip
VDC =600V, IF=150A
Vinth(on)
Over Current Protection
Level
Terminal
Chip
trr
Iccn
Input signal threshold voltage
Chip
VDC =600V, Tj =125ºC, IC =150A
toff
Switching time
Terminal
ALM-GND
TC =-20~110ºC
VCC 10V
RALM
Min.
Typ.
Max.
Units
1.1
-
1.70
2.10
1.70
2.45
-
1.0
2.20
2.70
1.0
2.15
3.00
2.1
mA
V
V
V
V
mA
V
V
V
V
µs
µs
-
-
0.3
µs
1.2
1.5
225
113
150
11.0
0.2
1.0
2.5
5.0
960
1.4
1.7
5
2
20
0.5
2.0
4.0
8.0
1265
35
124
1.6
1.9
3
12.5
2.4
4.9
11.0
1570
mA
mA
V
V
A
A
µs
µs
ºC
ºC
V
V
ms
ms
ms
Ω
Note *10: The Max value is a case where it measures from P2- (U, V, W, B), (U, V, W, B)-N2.
Thermal Characteristics (TC = 25ºC)
Items
Symbol
Inverter
Junction to Case Thermal Resistance (*11)
Brake
IGBT
FWD
IGBT
FWD
Min.
-
Rth(j-c)Q
Rth(j-c)D
Rth(j-c)Q
Rth(j-c)D
Case to Fin Thermal Resistance with Compound
Rth(c-f)
Typ.
0.05
Max.
0.160
0.235
0.240
0.500
-
Units
°C/W
°C/W
°C/W
°C/W
°C/W
Note *11: For 1device, the measurement point of the case is just under the chip.
Noise Immunity (VDC =600V, VCC =15V)
Items
Conditions
Min.
Typ.
Max.
Units
Common mode rectangular noise
Pulse width 1μs, polarity ±, 10 min.
Judge : no over-current, no miss operating
±2.0
-
-
kV
Recommended Operating Conditions
Items
DC Bus Voltage
Power Supply Voltage of Pre-Driver
Switching frequency of IPM
Arm shoot through blocking time for IPM's input signal
Screw Torque (M5)
Symbol
VDC
VCC
fSW
tdead
-
Min.
13.5
1.0
2.5
Typ.
15.0
-
Max.
800
16.5
20
3.5
Units
V
V
kHz
µs
Nm
Symbol
Wt
Min.
-
Typ.
980
Max.
-
Units
g
Weight
Items
Weight
2
7MBP150VEA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Block Diagram
P1
VCCU ③
VinU ②
ALMU ④
P2
Pre-Driver
RALM
U
GNDU ①
VCCV ⑦
VinV ⑥
ALM V ⑧
Pre-Driver
RALM
V
GNDV ⑤
VCCW ⑪
VinW ⑩
ALM W ⑫
Pre-Driver
RALM
W
GNDW ⑨
VCC ⑭
VinX ⑯
Pre-Driver
GND ⑬
VinY ⑰
Pre-Driver
VinZ ⑱
Pre-Driver
B
VinDB ⑮
Pre-Driver
N1
ALM ⑲
N2
RALM
Pre-drivers include following functions
1. Amplifier for driver
2. Short circuit protection
3. Under voltage lockout circuit
4. Over current protection
5. IGBT chip over heating protection
3
7MBP150VEA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Power supply current vs. Switching frequency
T j = 25℃ (typ.)
Input signal threshold voltage
vs. Power supply voltage (typ.)
3.0
200
TC =25~125℃
2.5
150
Input signal threshold voltage :
Vinth(on) ,V inth(off) [ V ]
Power supply current : I CC [ mA ]
Low-side
High-side
VCC =17V
VCC =15V
VCC =13V
100
50
VCC =17V
VCC =15V
VCC =13V
0
2.0
Vinth(off)
1.5
Vinth(on)
1.0
0.5
0.0
0
5
10
15
20
12
25
13
Switchig frequency : fsw [ kHz ]
15
16
17
18
Under voltage hysterisis
vs. Junction temperature (typ.)
Under voltage vs. Junction temperature (typ.)
15
1
12
0.8
Under voltage hysterisis : V H [ V ]
Under voltage : VUV [ V ]
14
Power supply voltage : V CC [ V ]
9
6
3
0
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
0
20
Junction temperature : Tj [ ℃ ]
40
60
80
100
120
140
Junction temperature : Tj [ ℃ ]
Over heating characteristics
TjOH , TjH vs. VCC (typ.)
Alarm hold time vs. Power supply voltage (typ.)
10
200
T jOH
t ALM(TjOH)
Over heating protection : TjOH [℃]
OH hysterisis : T jH [℃]
Alarm hold time : t ALM [ msec ]
8
6
4
tALM(OC)
2
0
150
100
50
T jH
0
12
13
14
15
16
17
18
12
Power supply voltage : V CC [ V ]
13
14
15
16
Power supply voltage : VCC [ V ]
4
17
18
7MBP150VEA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Inverter
Collector current vs. Collector-Emitter voltage
T j =25℃ [Chip] (typ.)
Collector current vs. Collector-Emitter voltage
T j =25℃ [Terminal] (typ.)
300
300
250
VCC =15V
VCC =17V
200
VCC =15V
VCC =17V
VCC =13V
Collector current : I C [ A ]
Collector current : I C [ A ]
250
150
100
50
200
150
100
50
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
Collector-Emitter voltage : V CE [ V ]
2.0
250
VCC =13V
Collector current : I C [ A ]
Collector current : I C [ A ]
VCC =17V
1.5
2.5
3.0
3.5
Collector current vs. Collector-Emitter voltage
T j =125℃ [Terminal] (typ.)
300
VCC =15V
250
1.0
Collector-Emitter voltage : V CE [ V ]
Collector current vs. Collector-Emitter voltage
T j =125℃ [Chip] (typ.)
300
200
150
100
50
VCC =15V
VCC =17V
200
VCC =13V
150
100
50
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
Collector-Emitter voltage : VCE [ V ]
1.0
1.5
2.0
2.5
3.5
Forward current vs. Forward voltage
[Terminal] (typ.)
300
250
250
Tj =25℃
3.0
Collector-Emitter voltage : VCE [ V ]
Forward current vs. Forward voltage
[Chip] (typ.)
300
Tj =125℃
Forward current : IF [ A ]
Forward current : IF [ A ]
VCC =13V
200
150
100
50
Tj =125℃
Tj =25℃
200
150
100
50
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
Forward voltage : VF [ V ]
0.5
1.0
1.5
2.0
2.5
Forward voltage : VF [ V ]
5
3.0
3.5
7MBP150VEA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching Loss vs. Collector Current (typ.)
VDC =600V, V CC =15V, Tj =25℃
Switching Loss vs. Collector Current (typ.)
VDC =600V, VCC =15V, Tj =125℃
50
Switching loss : Eon , Eoff, Err [mJ/cycle]
Switching loss : E on, Eoff, E rr [mJ/cycle]
50
40
30
E on
20
E off
10
40
E on
30
20
10
E rr
E rr
0
0
600
50
100
150
200
250
E off
0
300
0
50
100
150
200
250
Collector current : I C [ A ]
Collector current : I C [ A ]
Reversed biased safe operating area
VCC =15V, T j≦125℃ [Main Terminal] (min.)
Transient thermal resistance (max.)
300
10
Thermal resistance : R th(j-c) [ ℃/W ]
Collector current : I C [ A ]
500
400
300
200
RBSOA
(Repetitive pulse)
100
0
0
200
400
600
800
1000
1200
1
FWD
IGBT
0.1
0.01
0.001
1400
Collector-Emitter voltage : V CE [ V ]
1
10
Power derating for FWD (max.)
[per device]
600
Collector Power Dissipation : PC [ W ]
Collector Power Dissipation : P C [ W ]
0.1
Pulse width : P W [ sec ]
Power derating for IGBT (max.)
[per device]
1000
0.01
800
600
400
200
0
500
400
300
200
100
0
0
50
100
0
150
Case Temperature : TC [ ℃ ]
50
100
Case Temperature : TC [ ℃ ]
6
150
7MBP150VEA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
VDC =600V, VCC =15V, T j =25℃
Switching time vs. Collector current (typ.)
VDC =600V, VCC =15V, Tj =125℃
10000
Switching time : t on ,t off ,t f [ nsec ]
Switching time : t on, toff , t f [ nsec ]
10000
t on
t off
1000
100
tf
10
ton
toff
1000
100
tf
10
0
50
100
150
200
250
300
0
50
100
Collector current : I C [ A ]
Reverse recovery characteristics (typ.)
trr, Irr vs. If
t rr Tj=125℃
t rr Tj=25℃
100
200
250
300
Over current protection vs. Junction temperature (typ.)
VCC =15V
1000
Over current protection level : IOC [ A ]
Reverse recovery current : I rr [ A ]
Reverse recovery time : t rr [ nsec ]
1000
150
Collector current : I C [ A ]
I rr Tj=125℃
I rr Tj=25℃
10
1
800
600
400
200
0
0
50
100
150
200
250
0
300
Forward current : I F [ A ]
20
40
60
80
100
Junction temperature : Tj [ ℃ ]
7
120
140
7MBP150VEA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Brake
Collector current vs. Collector-Emitter voltage
T j =25℃ [Chip] (typ.)
Collector current vs. Collector-Emitter voltage
T j =25℃ [Terminal] (typ.)
150
150
125
V CC =15V
V CC =13V
V CC =17V
100
Collector current : I C [ A ]
Collector current : I C [ A ]
125
75
50
25
VCC =15V
75
50
25
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
Collector-Emitter voltage : V CE [ V ]
2.0
2.5
3.0
3.5
V CC =15V
125
V CC =17V
VCC =13V
Collector current : I C [ A ]
Collector current : IC [ A ]
VCC =17V
1.5
Collector current vs. Collector-Emitter voltage
T j =125℃ [Terminal] (typ.)
150
VCC =15V
125
1.0
Collector-Emitter voltage : V CE [ V ]
Collector current vs. Collector-Emitter voltage
T j =125℃ [Chip] (typ.)
150
100
75
50
25
V CC =13V
100
75
50
25
0
0
0.0
0.5
150
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Collector-Emitter voltage : V CE [ V ]
Collector-Emitter voltage : VCE [ V ]
Forward current vs. Forward voltage
[Chip] (typ.)
Forward current vs. Forward voltage
[Terminal] (typ.)
125
150
3.5
125
T j =25℃
100
Forward current : IF [ A ]
Forward current : IF [ A ]
VCC =13V
VCC =17V
100
T j =125℃
75
50
25
T j =25℃
100
T j =125℃
75
50
25
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
Forward voltage : VF [ V ]
0.5
1.0
1.5
2.0
2.5
3.0
Forward voltage : VF [ V ]
8
3.5
4.0
7MBP150VEA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching Loss vs. Collector Current (typ.)
VDC=600V, VCC =15V
10
300
T j =125℃
250
Collector current : IC [ A ]
Switching loss : E off [mJ/cycle]
8
T j =25℃
6
Reversed biased safe operating area
VCC =15V, Tj≦ 125℃ [Main Terminal] (min.)
4
2
200
150
100
RBSOA
(Repetitive pulse)
50
0
0
0
25
50
75
100
125
150
0
Power derating for IGBT (max.)
[per device]
500
400
300
200
100
0
600
800
1000
1200
1400
250
200
150
100
50
0
0
50
100
150
0
Case Temperature : TC [ ℃ ]
10
1
FWD
IGBT
0.1
0.01
0.001
0.01
0.1
1
50
100
Case Temperature : TC [ ℃ ]
Transient thermal resistance (max.)
Thermal resistance : R th(j-c) [ ℃/W ]
400
Power derating for FWD (max.)
[per device]
300
Collector Power Dissipation : PC [ W ]
Collector Power Dissipation : PC [ W ]
600
200
Collector-Emitter voltage : V CE [ V ]
Collector current : I C [ A ]
10
Pulse width : P W [ sec ]
9
150
7MBP150VEA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
10
7MBP150VEA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2012.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment • Electrical home appliances
• Personal equipment • Industrial robots etc.
5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Safety devices
• Medical equipment
6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7.Copyright ©1996-2012 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.
11