http://www.fujielectric.com/products/semiconductor/ 7MBP150VEA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 150A / IPM Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs • Low power loss and soft switching • High performance and high reliability IGBT with overheating protection • Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (TC =25ºC, VCC =15V unless otherwise specified) Symbol Min. Max. Units Collector-Emitter Voltage (*1) Short Circuit Voltage VCES 0 400 -0.5 -0.5 -0.5 -20 -40 - 1200 800 150 300 150 781 75 150 75 520 20 VCC+0.5 VCC 20 150 110 125 260 AC2500 V V A A A W A A A W V V V mA ºC ºC ºC ºC Vrms - 3.5 Nm Brake Inverter Items Collector Current Collector Power Dissipation Collector Current VSC DC 1ms Duty=100% (*2) 1 device (*3) DC 1ms Forward Current of Diode Collector Power Dissipation 1 device (*3) Supply Voltage of Pre-Driver (*4) Input Signal Voltage (*5) Alarm Signal Voltage (*6) Alarm Signal Current (*7) Junction Temperature Operating Case Temperature Storage Temperature Solder Temperature (*8) Isolating Voltage (*9) Terminal (M5) Screw Torque Mounting (M5) IC Icp -IC PC IC Icp IF PC VCC Vin VALM IALM Tj Topr Tstg Tsol Viso - Note *1: VCES shall be applied to the input voltage between all Collector and Emitter. [ P1- (U, V, W ,B), P2- (U, V, W, B), (U ,V ,W ,B)-N1, (U, V, W, B)-N2 ] Note *2: Duty=125ºC/Rth(j-c)D /(I F×VF Max.)×100 Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake) Note *4: VCC shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 14 and 13. Note *5: Vin shall be applied to the input voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 15~18 and 13. Note *6: VALM shall be applied to the voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 19 and 13. Note *7: I ALM shall be applied to the input current to terminal No.4, 8, 12 and 19. Note *8: Immersion time 10±1 sec. 1 time. Note *9: Terminal to base, 50/60Hz sine wave 1 min. All terminals should be connected together during the test. 1 7MBP150VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical Characteristics (Tj =25ºC, VCC =15V unless otherwise specified) Items Brake Inverter Collector Current at off signal input Symbol Conditions ICES VCE=1200V Collector-Emitter saturation voltage (*10) VCE(sat) IC =150A Forward voltage of FWD (*10) VF IF=150A Collector Current at off signal input ICES VCE=1200V Collector-Emitter saturation voltage (*10) VCE(sat) IC =75A Forward voltage of FWD (*10) VF IF=75A ton Supply current of P-side pre-driver (per one unit) Supply current of N-side pre-driver Switching Frequency= 0-15kHz TC =-20~110ºC Vin -GND Tj =125ºC tdOC Tj =125ºC tSC Tj =125ºC TjOH Surface of IGBT Chips TjH VUV VH tALM(UV) tALM(TjOH) Resistance for current limit ON OFF IOC tALM(OC) Alarm Signal Hold Time Terminal Chip Iccp Vinth(off) Inverter Brake Over Current Protection Delay time Short Circuit Protection Delay time IGBT Chips Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Terminal Chip VDC =600V, IF=150A Vinth(on) Over Current Protection Level Terminal Chip trr Iccn Input signal threshold voltage Chip VDC =600V, Tj =125ºC, IC =150A toff Switching time Terminal ALM-GND TC =-20~110ºC VCC 10V RALM Min. Typ. Max. Units 1.1 - 1.70 2.10 1.70 2.45 - 1.0 2.20 2.70 1.0 2.15 3.00 2.1 mA V V V V mA V V V V µs µs - - 0.3 µs 1.2 1.5 225 113 150 11.0 0.2 1.0 2.5 5.0 960 1.4 1.7 5 2 20 0.5 2.0 4.0 8.0 1265 35 124 1.6 1.9 3 12.5 2.4 4.9 11.0 1570 mA mA V V A A µs µs ºC ºC V V ms ms ms Ω Note *10: The Max value is a case where it measures from P2- (U, V, W, B), (U, V, W, B)-N2. Thermal Characteristics (TC = 25ºC) Items Symbol Inverter Junction to Case Thermal Resistance (*11) Brake IGBT FWD IGBT FWD Min. - Rth(j-c)Q Rth(j-c)D Rth(j-c)Q Rth(j-c)D Case to Fin Thermal Resistance with Compound Rth(c-f) Typ. 0.05 Max. 0.160 0.235 0.240 0.500 - Units °C/W °C/W °C/W °C/W °C/W Note *11: For 1device, the measurement point of the case is just under the chip. Noise Immunity (VDC =600V, VCC =15V) Items Conditions Min. Typ. Max. Units Common mode rectangular noise Pulse width 1μs, polarity ±, 10 min. Judge : no over-current, no miss operating ±2.0 - - kV Recommended Operating Conditions Items DC Bus Voltage Power Supply Voltage of Pre-Driver Switching frequency of IPM Arm shoot through blocking time for IPM's input signal Screw Torque (M5) Symbol VDC VCC fSW tdead - Min. 13.5 1.0 2.5 Typ. 15.0 - Max. 800 16.5 20 3.5 Units V V kHz µs Nm Symbol Wt Min. - Typ. 980 Max. - Units g Weight Items Weight 2 7MBP150VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Block Diagram P1 VCCU ③ VinU ② ALMU ④ P2 Pre-Driver RALM U GNDU ① VCCV ⑦ VinV ⑥ ALM V ⑧ Pre-Driver RALM V GNDV ⑤ VCCW ⑪ VinW ⑩ ALM W ⑫ Pre-Driver RALM W GNDW ⑨ VCC ⑭ VinX ⑯ Pre-Driver GND ⑬ VinY ⑰ Pre-Driver VinZ ⑱ Pre-Driver B VinDB ⑮ Pre-Driver N1 ALM ⑲ N2 RALM Pre-drivers include following functions 1. Amplifier for driver 2. Short circuit protection 3. Under voltage lockout circuit 4. Over current protection 5. IGBT chip over heating protection 3 7MBP150VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Power supply current vs. Switching frequency T j = 25℃ (typ.) Input signal threshold voltage vs. Power supply voltage (typ.) 3.0 200 TC =25~125℃ 2.5 150 Input signal threshold voltage : Vinth(on) ,V inth(off) [ V ] Power supply current : I CC [ mA ] Low-side High-side VCC =17V VCC =15V VCC =13V 100 50 VCC =17V VCC =15V VCC =13V 0 2.0 Vinth(off) 1.5 Vinth(on) 1.0 0.5 0.0 0 5 10 15 20 12 25 13 Switchig frequency : fsw [ kHz ] 15 16 17 18 Under voltage hysterisis vs. Junction temperature (typ.) Under voltage vs. Junction temperature (typ.) 15 1 12 0.8 Under voltage hysterisis : V H [ V ] Under voltage : VUV [ V ] 14 Power supply voltage : V CC [ V ] 9 6 3 0 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 0 20 Junction temperature : Tj [ ℃ ] 40 60 80 100 120 140 Junction temperature : Tj [ ℃ ] Over heating characteristics TjOH , TjH vs. VCC (typ.) Alarm hold time vs. Power supply voltage (typ.) 10 200 T jOH t ALM(TjOH) Over heating protection : TjOH [℃] OH hysterisis : T jH [℃] Alarm hold time : t ALM [ msec ] 8 6 4 tALM(OC) 2 0 150 100 50 T jH 0 12 13 14 15 16 17 18 12 Power supply voltage : V CC [ V ] 13 14 15 16 Power supply voltage : VCC [ V ] 4 17 18 7MBP150VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Inverter Collector current vs. Collector-Emitter voltage T j =25℃ [Chip] (typ.) Collector current vs. Collector-Emitter voltage T j =25℃ [Terminal] (typ.) 300 300 250 VCC =15V VCC =17V 200 VCC =15V VCC =17V VCC =13V Collector current : I C [ A ] Collector current : I C [ A ] 250 150 100 50 200 150 100 50 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 Collector-Emitter voltage : V CE [ V ] 2.0 250 VCC =13V Collector current : I C [ A ] Collector current : I C [ A ] VCC =17V 1.5 2.5 3.0 3.5 Collector current vs. Collector-Emitter voltage T j =125℃ [Terminal] (typ.) 300 VCC =15V 250 1.0 Collector-Emitter voltage : V CE [ V ] Collector current vs. Collector-Emitter voltage T j =125℃ [Chip] (typ.) 300 200 150 100 50 VCC =15V VCC =17V 200 VCC =13V 150 100 50 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 Collector-Emitter voltage : VCE [ V ] 1.0 1.5 2.0 2.5 3.5 Forward current vs. Forward voltage [Terminal] (typ.) 300 250 250 Tj =25℃ 3.0 Collector-Emitter voltage : VCE [ V ] Forward current vs. Forward voltage [Chip] (typ.) 300 Tj =125℃ Forward current : IF [ A ] Forward current : IF [ A ] VCC =13V 200 150 100 50 Tj =125℃ Tj =25℃ 200 150 100 50 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 Forward voltage : VF [ V ] 0.5 1.0 1.5 2.0 2.5 Forward voltage : VF [ V ] 5 3.0 3.5 7MBP150VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching Loss vs. Collector Current (typ.) VDC =600V, V CC =15V, Tj =25℃ Switching Loss vs. Collector Current (typ.) VDC =600V, VCC =15V, Tj =125℃ 50 Switching loss : Eon , Eoff, Err [mJ/cycle] Switching loss : E on, Eoff, E rr [mJ/cycle] 50 40 30 E on 20 E off 10 40 E on 30 20 10 E rr E rr 0 0 600 50 100 150 200 250 E off 0 300 0 50 100 150 200 250 Collector current : I C [ A ] Collector current : I C [ A ] Reversed biased safe operating area VCC =15V, T j≦125℃ [Main Terminal] (min.) Transient thermal resistance (max.) 300 10 Thermal resistance : R th(j-c) [ ℃/W ] Collector current : I C [ A ] 500 400 300 200 RBSOA (Repetitive pulse) 100 0 0 200 400 600 800 1000 1200 1 FWD IGBT 0.1 0.01 0.001 1400 Collector-Emitter voltage : V CE [ V ] 1 10 Power derating for FWD (max.) [per device] 600 Collector Power Dissipation : PC [ W ] Collector Power Dissipation : P C [ W ] 0.1 Pulse width : P W [ sec ] Power derating for IGBT (max.) [per device] 1000 0.01 800 600 400 200 0 500 400 300 200 100 0 0 50 100 0 150 Case Temperature : TC [ ℃ ] 50 100 Case Temperature : TC [ ℃ ] 6 150 7MBP150VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) VDC =600V, VCC =15V, T j =25℃ Switching time vs. Collector current (typ.) VDC =600V, VCC =15V, Tj =125℃ 10000 Switching time : t on ,t off ,t f [ nsec ] Switching time : t on, toff , t f [ nsec ] 10000 t on t off 1000 100 tf 10 ton toff 1000 100 tf 10 0 50 100 150 200 250 300 0 50 100 Collector current : I C [ A ] Reverse recovery characteristics (typ.) trr, Irr vs. If t rr Tj=125℃ t rr Tj=25℃ 100 200 250 300 Over current protection vs. Junction temperature (typ.) VCC =15V 1000 Over current protection level : IOC [ A ] Reverse recovery current : I rr [ A ] Reverse recovery time : t rr [ nsec ] 1000 150 Collector current : I C [ A ] I rr Tj=125℃ I rr Tj=25℃ 10 1 800 600 400 200 0 0 50 100 150 200 250 0 300 Forward current : I F [ A ] 20 40 60 80 100 Junction temperature : Tj [ ℃ ] 7 120 140 7MBP150VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Brake Collector current vs. Collector-Emitter voltage T j =25℃ [Chip] (typ.) Collector current vs. Collector-Emitter voltage T j =25℃ [Terminal] (typ.) 150 150 125 V CC =15V V CC =13V V CC =17V 100 Collector current : I C [ A ] Collector current : I C [ A ] 125 75 50 25 VCC =15V 75 50 25 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 Collector-Emitter voltage : V CE [ V ] 2.0 2.5 3.0 3.5 V CC =15V 125 V CC =17V VCC =13V Collector current : I C [ A ] Collector current : IC [ A ] VCC =17V 1.5 Collector current vs. Collector-Emitter voltage T j =125℃ [Terminal] (typ.) 150 VCC =15V 125 1.0 Collector-Emitter voltage : V CE [ V ] Collector current vs. Collector-Emitter voltage T j =125℃ [Chip] (typ.) 150 100 75 50 25 V CC =13V 100 75 50 25 0 0 0.0 0.5 150 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Collector-Emitter voltage : V CE [ V ] Collector-Emitter voltage : VCE [ V ] Forward current vs. Forward voltage [Chip] (typ.) Forward current vs. Forward voltage [Terminal] (typ.) 125 150 3.5 125 T j =25℃ 100 Forward current : IF [ A ] Forward current : IF [ A ] VCC =13V VCC =17V 100 T j =125℃ 75 50 25 T j =25℃ 100 T j =125℃ 75 50 25 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 Forward voltage : VF [ V ] 0.5 1.0 1.5 2.0 2.5 3.0 Forward voltage : VF [ V ] 8 3.5 4.0 7MBP150VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching Loss vs. Collector Current (typ.) VDC=600V, VCC =15V 10 300 T j =125℃ 250 Collector current : IC [ A ] Switching loss : E off [mJ/cycle] 8 T j =25℃ 6 Reversed biased safe operating area VCC =15V, Tj≦ 125℃ [Main Terminal] (min.) 4 2 200 150 100 RBSOA (Repetitive pulse) 50 0 0 0 25 50 75 100 125 150 0 Power derating for IGBT (max.) [per device] 500 400 300 200 100 0 600 800 1000 1200 1400 250 200 150 100 50 0 0 50 100 150 0 Case Temperature : TC [ ℃ ] 10 1 FWD IGBT 0.1 0.01 0.001 0.01 0.1 1 50 100 Case Temperature : TC [ ℃ ] Transient thermal resistance (max.) Thermal resistance : R th(j-c) [ ℃/W ] 400 Power derating for FWD (max.) [per device] 300 Collector Power Dissipation : PC [ W ] Collector Power Dissipation : PC [ W ] 600 200 Collector-Emitter voltage : V CE [ V ] Collector current : I C [ A ] 10 Pulse width : P W [ sec ] 9 150 7MBP150VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm 10 7MBP150VEA120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2012. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2012 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 11