isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2248 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 40 W Tj Junction Temperature 175 ℃ -65~175 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2248 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 400 UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V hFE DC Current Gain IC= 3A; VCE= 5V ICBO Collector Cutoff Current VCB= 450V; IE= 0 TC=125℃ 1.0 4.0 mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA 1.0 μs 2.0 μs 1.0 μs 10 Switching Times tr tstg tf Rise Time Storage Time Fall Time isc Website：www.iscsemi.cn IC=3A; IB1=- IB2= 0.6A