DSB 60 C 45HB advanced V RRM = 45 V I FAV = 2x 30 A V F = 0.58 V Schottky High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode 1 Part number 2 3 DSB 60 C 45HB Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses ● Low Irm-values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Low losses ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● Epoxy meets UL 94V-0 ● RoHS compliant TO-247AD Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF Conditions forward voltage min. TVJ = 25 °C Unit 45 V TVJ = 25 °C 10 mA VR = 45 V TVJ = 100 °C 100 mA I F = 30 A I F = 60 A TVJ = 25 °C 0.62 0.88 V V I F = 30 A I F = 60 A T VJ = 125 °C 0.58 0.86 V V rectangular, d = 0.5 T C = 125 °C 30 A T VJ = 150 °C 0.31 8.7 V mΩ 0.95 K/W 150 °C TC = 25 °C 130 W 320 A average forward current VF0 rF threshold voltage slope resistance R thJC thermal resistance junction to case TVJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current t p = 10 ms (50 Hz), sine TVJ = 45 °C CJ junction capacitance VR = tbd V; f = 1 MHz TVJ = EAS non-repetitive avalanche energy I AS = tbd A; L = 100 µH T VJ = 25 °C I AR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz for power loss calculation only -55 25 °C Data according to IEC 60747and per diode unless otherwise specified tbd pF tbd mJ tbd A 0629 © 2006 IXYS all rights reserved max. VR = 45 V I FAV IXYS reserves the right to change limits, conditions and dimensi typ. DSB 60 C 45HB advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* RthCH thermal resistance case to heatsink MD mounting torque FC mounting force with clip T stg storage temperature min. typ. max. Unit 50 A 0.25 K/W 0.8 1.2 Nm 20 120 N -55 150 °C Weight 6 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-247AD L B E F C A H D G J K © 2006 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.216 0.212 0.244 G H 1.65 - 2.13 4.5 0.065 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 N Data according to IEC 60747and per diode unless otherwise specified 0629 IXYS reserves the right to change limits, conditions and dimensi M Dim.