IXYS DSA30C200PB

DSA 30 C 200 PB
advanced
V RRM =
200 V
I FAV = 2x 15 A
V F = 0.78 V
Schottky Diode Gen ²
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
1
2
3
DSA 30 C 200 PB
Backside: cathode
Features / Advantages:
Applications:
Package:
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
● Housing: TO-220
Symbol
Definition
Conditions
VRRM
max. repetitive reverse voltage
IR
reverse current
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
VF
forward voltage
min.
Unit
200
V
VR = 200 V
0.25
mA
VR = 200 V
TVJ = 125 °C
2.5
mA
IF =
15 A
TVJ = 25 °C
0.94
V
IF =
30 A
1.10
V
IF =
15 A
0.78
V
IF =
30 A
0.95
V
TVJ = 125 °C
TC = 150°C
15
A
TVJ = 175°C
0.53
V
I FAV
average forward current
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
T VJ
virtual junction temperature
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms (50 Hz), sine
CJ
junction capacitance
VR = 24 V; f = 1 MHz
TVJ = 25 °C
© 2010 IXYS all rights reserved
max.
TVJ = 25 °C
TVJ = 25 °C
VF0
rectangular
d = 0.5
for power loss calculation only
IXYS reserves the right to change limits, conditions and dimensions.
typ.
10.8
mΩ
1.75
K/W
175
°C
TC = 25 °C
85
W
TVJ = 45°C
120
A
-55
Data according to IEC 60747and per diode unless otherwise specified
67
pF
20100628
DSA 30 C 200 PB
advanced
Ratings
Symbol
Definition
min.
Conditions
I RMS
RMS current
R thCH
thermal resistance case to heatsink
Tstg
storage temperature
per terminal
max.
35
0.50
-55
Weight
mounting torque
FC
mounting force with clip
Unit
A
K/W
150
2
MD
1)
typ.
1)
°C
g
0.4
0.6
Nm
20
60
N
IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) .
In case of (1) and a common cathode/anode configu ration with a non-isolated backside,
the current capability can be increased by connecting the backside.
Product Marking
Part number
Marking on product
Logo
DateCode
Assembly Code
Ordering
Standard
abcdef
YYWW
=
=
=
=
=
=
=
Diode
Schottky Diode
low VF
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-220AB (3)
XXXXXX
Part Name
DSA 30 C 200 PB
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
D
S
A
30
C
200
PB
Marking on Product
DSA30C200PB
Delivering Mode
Tube
Base Qty Code Key
50
507014
Data according to IEC 60747and per diode unless otherwise specified
20100628
DSA 30 C 200 PB
advanced
Outlines TO-220
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.32
1.14
2.29
4.82
1.39
2.79
0.170
0.045
0.090
0.190
0.055
0.110
b
b2
0.64
1.15
1.01
1.65
0.025
0.045
0.040
0.065
C
D
0.35
14.73
0.56
16.00
0.014
0.580
0.022
0.630
E
e
H1
9.91
2.54
5.85
10.66
BSC
6.85
0.390
0.100
0.230
0.420
BSC
0.270
L
L1
12.70
2.79
13.97
5.84
0.500
0.110
0.550
0.230
ØP
Q
3.54
2.54
4.08
3.18
0.139
0.100
0.161
0.125
A
A1
H1
Q
E
L
3x b2
L1
D
ØP
3x b
2x e
C
A2
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100628