DPG 20 C 200 PN V RRM = 200 V I FAV = 2x 10 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 20 C 200 PN Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-220FP Conditions ●rIndustry standard outline ●rPlastic overmolded tab for ●r electrical isolation ●rIsolation Voltage 2500 V ●rUL registered E 72873 ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved typ. max. Unit 200 V VR = 200 V 1 µA VR = 200 V TVJ = 150 °C 0.06 mA TVJ = 25 °C 1.27 V 1.45 V 0.98 V 1.17 V TC = 125°C 10 A TVJ = 175°C 0.74 V IF = 10 A IF = 20 A IF = 10 A IF = 20 A rectangular TVJ = 150 °C d = 0.5 for power loss calculation only RthJC t rr min. TVJ = 25 °C TVJ = 25 °C -55 17.7 mΩ 4.40 K/W 175 °C TC = 25 °C 35 W t = 10 ms (50 Hz), sine TVJ = 45°C 140 A TVJ = 25 °C 3 A IF = TVJ = 125°C 5.5 A 10 A; VR = 130 V -di F /dt = 200 A/µs VR = 150 V; f = 1 MHz TVJ = 25 °C 35 ns TVJ = 125°C 45 ns TVJ = 25 °C 15 pF Data according to IEC 60747and per diode unless otherwise specified 20090323a DPG 20 C 200 PN Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin typ. 1) max. Unit 35 0.50 -55 Weight A K/W 150 °C 2 MD mounting torque FC mounting force with clip VISOL isolation voltage g 0.4 0.6 Nm 20 60 N t = 1 second 2500 t = 1 minute V 2000 V dS creapage distance on surface 1.07 mm dA striking distance through air 1.07 mm 1) IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Marking on product Logo DateCode Assembly Code Ordering Standard abcdef YYWW = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-220ABFP (3) XXXXXX Part Name DPG 20 C 200 PN Similar Part DPG20C200PB IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved D P G 20 C 200 PN Marking on Product DPG20C200PN Package TO-220AB (3) Delivering Mode Tube Base Qty Code Key 50 503658 Voltage Class 200 Data according to IEC 60747and per diode unless otherwise specified 20090323a DPG 20 C 200 PN Outlines TO-220FP ØP A E A1 H Q D L1 A2 L b1 b c e IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20090323a DPG 20 C 200 PN 30 0.4 12 TVJ = 125°C VR = 130 V 25 IF 0.3 TVJ = 25°C 125°C 150°C 20 Qrr 15 [µC] [A] TVJ = 125°C 10 20 A 10 A 8 5A 10 A IRR 5A [A] 0.2 20 A VR = 130 V 10 6 4 0.1 5 2 0 0.0 0.0 0.4 0.8 1.2 VF [V] 1.6 0 2.0 0 Fig. 1 Forward current IF versus forward voltage drop VF 100 200 300 400 -diF/dt [A/µs] 500 0 200 300 400 500 -diF/dt [A/µs] Fig. 3 Typ. reverse recovery current IRR versus -diF /dt Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt 80 1.4 100 12 600 10 500 TVJ = 125°C 1.2 VR = 130 V 60 1.0 8 400 IF = 20 A 0.8 VFR trr 40 [ns] Kf 0.6 10 A IRR [V] IF = 10 A VR = 130 V 6 300 [ns] 200 4 5A 0.4 tfr TVJ = 125°C 20 Qrr 0.2 2 0.0 0 0 40 80 120 TVJ [°C] 160 VFR 0 0 100 200 300 400 500 0 -diF /dt [A/µs] Fig. 5 Typ. reverse recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qrr, IRR versus TVJ 10 tfr 100 200 300 400 -diF /dt [A/µs] 100 0 500 Fig. 6 Typ. forward recovery voltage VFR and tfr versus diF /dt 10 TVJ = 125°C VR = 130 V 8 IF = 5 A 6 Erec ZthJH 10 A 20 A [µJ] 1 [K/W] 4 Rthi [K/W] 0.3474 0.633 0.5473 2.162 0.7102 2 0 0 100 200 300 400 -diF/dt [A/µs] 500 0.1 0.001 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved 0.01 0.1 1 10 ti [s] 0.0003 0.0035 0.029 1.2 7.8 100 t [s] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per diode unless otherwise specified 20090323a