IXFK26N100P IXFX26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 26A Ω ≤ 390mΩ ≤ 300ns RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 26 65 A A IAR EAS TC = 25°C TC = 25°C 13 1 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 780 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque (IXFK) 1.13/10 Nm/lb.in. FC Mounting force (IXFX) 20..120 /4.5..27 N/lb. Weight TO-264 TO-247 10 6 g g G D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages Easy to mount z Space savings z High power density z Symbol Test Conditions BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION,All rights reserved Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. TJ = 125°C V 6.5 V ± 200 nA 25 2 μA mA 390 mΩ Applications: z z z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls DS99853A(4/08) IXFK26N100P IXFX26N100P Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 20V, ID = 0.5 • ID25, Note 1 13 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz TO-264 (IXFK) Outline 22 S 11.9 nF 690 pF 60 pF 1.50 Ω 45 ns Crss RGi Gate input resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 45 ns td(off) RG = 1Ω (External) 72 ns 50 ns 197 nC 76 nC 85 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.16 RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0V ISM °C/W Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 26 A Repetitive, pulse width limited by TJM 104 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 13A, -di/dt = 100A/μs VR = 100V, VGS = 0V 300 ns μC A 1.2 12 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK26N100P IXFX26N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 28 70 VGS = 10V 9V 24 60 50 ID - Amperes ID - Amperes 20 VGS = 10V 16 8V 12 8 9V 40 30 20 4 8V 10 7V 7V 0 0 0 1 2 3 4 5 6 7 8 9 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature 28 3.0 VGS = 10V 9V 24 2.8 VGS = 10V 2.6 RDS(on) - Normalized 2.4 ID - Amperes 20 16 12 8V 8 2.2 I D = 26A 2.0 1.8 I D = 13A 1.6 1.4 1.2 1.0 0.8 4 7V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 28 VGS = 10V 2.6 TJ = 125ºC 24 20 2.2 ID - Amperes RDS(on) - Normalized 2.4 2.0 1.8 1.6 1.4 16 12 8 1.2 TJ = 25ºC 4 1.0 0 0.8 0 5 10 15 20 25 30 35 40 ID - Amperes © 2008 IXYS CORPORATION,All rights reserved 45 50 55 60 65 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK26N100P IXFX26N100P Fig. 8. Transconductance Fig. 7. Input Admittance 50 40 45 35 40 25 g f s - Siemens ID - Amperes 30 TJ = 125ºC 25ºC - 40ºC 20 15 35 TJ = - 40ºC 25ºC 125ºC 30 25 20 15 10 10 5 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 15 VGS - Volts 25 30 35 40 Fig. 10. Gate Charge 80 16 70 14 60 12 50 10 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 TJ = 125ºC 30 20 ID - Amperes VDS = 500V I D = 13A I G = 10mA 8 6 TJ = 25ºC 20 4 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 40 VSD - Volts 80 120 160 200 240 280 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 f = 1 MHz Z(th)JC - ºC / W Capacitance - PicoFarads Ciss 10,000 Coss 1,000 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_32N100P(86)3-28-08-B