IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS(on) = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 60 A IDM TC = 25°C, Pulse Width Limited by TJM 150 A IA TC = 25°C 30 A EAS TC = 25°C 700 mJ PD TC = 25°C 500 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Md Mounting Torque (TO-220 &TO-3P) Weight TO-263 TO-220 TO-3P 1.13 / 10 Nm/lb.in. 2.5 3.0 5.5 g g g G DS D (Tab) TO-3P (IXTQ) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z High Current Handling Capability 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V VGS = 10V, ID = 0.5 • ID25, Note 1 z V 5.0 V 32 z z 1 μA z 40 mΩ z z z z z © 2010 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density Applications ±200 nA 250 μA TJ = 150°C RDS(on) z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS99359B(7/10) IXTA60N20T IXTP60N20T IXTQ60N20T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 10V, ID = 0.5 • ID25, Note 1 TO-220 (IXTP) Outline 62 S 4530 pF 490 pF 72 pF 22 ns 13 ns 33 ns tf 22 ns Qg(on) 73 nC 22 nC 22 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Qgs Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS RthCS Pins: 1 - Gate 3 - Source 2 - Drain 0.30 °C/W TO-220 TO-3P 0.50 0.25 °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 60 A Repetitive, Pulse Width Limited by TJM 240 A VSD IF = 60A, VGS = 0V, Note 1 1.3 V trr IF = 0.5 • ID25, VGS = 0V IRM QRM Note -di/dt = 100A/μs VR = 85V 118 ns 9.3 A 550 nC TO-3P (IXTQ) Outline 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 (IXTA) Outline 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA60N20T IXTP60N20T IXTQ60N20T Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 60 200 VGS = 15V 10V 8V 50 160 7V ID - Amperes 30 8V 140 40 ID - Amperes VGS = 15V 10V 180 6V 20 120 7V 100 80 60 6V 40 10 20 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2 4 6 8 12 14 16 18 20 Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 60 3.4 VGS = 15V 10V 7V VGS = 10V 3.0 R DS(on) - Normalized 50 40 ID - Amperes 10 VDS - Volts VDS - Volts 6V 30 20 5V 2.6 I D = 60A 2.2 I D = 30A 1.8 1.4 1.0 10 0.6 4V 0 0.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 70 5.0 VGS = 10V 4.5 TJ = 175ºC 60 50 3.5 ID - Amperes R DS(on) - Normalized 4.0 3.0 2.5 TJ = 25ºC 2.0 40 30 20 1.5 10 1.0 0.5 0 0 20 40 60 80 100 120 140 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 160 180 200 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 IXTA60N20T IXTP60N20T IXTQ60N20T Fig. 7. Input Admittance Fig. 8. Transconductance 120 120 100 100 g f s - Siemens ID - Amperes 80 TJ = 150ºC 25ºC - 40ºC 60 TJ = - 40ºC 80 25ºC 60 150ºC 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 Fig. 9. Forward Voltage Drop of Intrinsic Diode 80 100 120 140 Fig. 10. Gate Charge 180 10 160 9 VDS = 100V I D = 30A 8 140 I G = 10mA 7 VGS - Volts 120 IS - Amperes 60 ID - Amperes VGS - Volts 100 80 6 5 4 TJ = 150ºC 60 3 40 TJ = 25ºC 2 20 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 10 20 VSD - Volts 30 40 50 60 70 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 0.10 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_60N20T(5G)02-10-10