IXYS IXFP12N50P

PolarTM Power MOSFET
HiperFETTM
IXFA12N50P
IXFP12N50P
VDSS
ID25
RDS(on)
= 500V
= 12A
≤ 500mΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
500
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
12
A
IDM
TC = 25°C, pulse width limited by TJM
30
A
IA
EAS
TC = 25°C
TC = 25°C
12
600
A
mJ
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
200
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ
TJM
Tstg
TO-263 (IXFA)
TL
1.6mm (0.062) from case for 10s
300
°C
TSOLD
Plastic body for 10s
260
°C
Md
Mounting torque
1.13 / 10
Nm/lb.in.
Weight
TO-263
TO-220
2.5
3.0
g
g
(TO-220)
G
S
(TAB)
TO-220 (IXFP)
G
(TAB)
D S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
z
z
International standard packages
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
Advantages
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
500
VGS(th)
VDS = VGS, ID = 1mA
3.0
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
z
z
Easy to mount
Space savings
High power density
V
5.5
V
±100 nA
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
5
250
μA
μA
500 mΩ
DS99436F(04/08)
IXFA12N50P
IXFP12N50P
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
13
S
1830
182
16
pF
pF
pF
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 50Ω (External)
22
27
65
20
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
29
11
10
nC
nC
nC
RthJC
RthCS
(TO-220)
0.50
0.62 °C/W
°C/W
td(on)
tr
td(off)
tf
7.5
TO-220 (IXFP) Outline
Source-Drain Diode
Pins:
1 - Gate
2 - Drain
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0V
12 A
ISM
Repetitive, pulse width limited by TJM
48 A
VSD
IF = IS, VGS = 0V, Note 1
1.5 V
trr
QRM
IRM
IF = 6A, -di/dt = 150A/μs,
VR = 100V, VGS = 0V
2.8
18.2
300 ns
μC
A
TO-263 (IXFA) Outline
Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFA12N50P
IXFP12N50P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25ºC
12
30
VGS = 10V
8V
24
21
8
7V
I D - Amperes
I D - Amperes
VGS = 10V
27
10
6
4
18
15
7V
12
9
6
2
6V
6V
3
0
0
0
1
2
3
4
5
6
7
0
3
6
9
V D S - Volts
18
21
24
27
30
Fig. 4. RDS(on) Normalized to I D = 6A Value
vs. Junction Temperature
@ 125ºC
12
2.6
VGS = 10V
2.4
7V
8
6
6V
4
VGS = 10V
2.2
R D S ( o n ) - Normalized
10
I D - Amperes
15
V D S - Volts
Fig. 3. Output Characteristics
2.0
1.8
1.6
ID = 12A
1.4
ID = 6A
1.2
1.0
0.8
2
5V
0.6
0
0.4
0
2
4
6
8
10
12
-50
-25
VD S - Volts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to I D = 6A Value
vs. Drain Current
Fig. 6. Drain Curre nt v s. Case
Te mpe rature
14
3.4
12
VGS = 10V
3.0
TJ = 125 ºC
10
2.6
I D - Amperes
R D S ( o n ) - Normalized
12
2.2
1.8
TJ = 25 ºC
1.4
8
6
4
1.0
2
0.6
0
0
3
6
9
12
I
D
15
18
- Amperes
© 2008 IXYS CORPORATION, All rights reserved
21
24
27
30
-50
-25
0
25
50
75
100
T C - Degrees Centigrade
125
150
IXFA12N50P
IXFP12N50P
Fig. 8. Transconductance
20
27
18
24
16
21
14
g f s - Siemens
I D - Amperes
Fig. 7. Input Admittance
12
TJ = 125 ºC
10
25ºC
- 40ºC
8
18
TJ = - 40ºC
15
25ºC
125ºC
12
9
6
6
4
3
2
0
0
4.5
5.0
5.5
6.0
VG
S
6.5
7.0
0
7.5
2
4
8
I
Fig. 9. Source Current vs. Source-To-Drain
Voltage
D
10
12
16
18
20
24
27
30
10
30
VG S - Volts
25
20
15
TJ = 125 ºC
9
VDS = 250V
8
ID = 6A
7
IG = 10m A
6
5
4
3
10
2
TJ = 25ºC
5
1
0
0
0.4
0.5
0.6
0.7
VS
D
0.8
0.9
0
1.0
- Volts
3
6
9
12
Q
- nanoCoulombs
G
15
18
21
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
100
f = 1MHz
TJ = 150ºC
Ciss
RDS(on) Limit
I D - Amperes
Capacitance - picoFarads
14
- Amperes
Fig. 10. Gate Charge
35
I S - Amperes
6
- Volts
1000
Coss
TC = 25ºC
25µs
10
100
100µs
1m s
Crss
DC
10
1
0
5
10
15
20
25
30
35
40
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - Volts
10ms
1000
IXFA12N50P
IXFP12N50P
Fig. 13. Maximum Transient Thermal Impedance
Z ( t h ) J C - ºC / W
1.00
0.10
0.01
0.01
0.1
1
10
100
1000
Pulse Width - milliseconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_12N50P(4J)4-14-08-D