isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD649 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous -0.3 A B PC TJ Tstg Collector Power Dissipation @ Ta=25℃ 2 Collector Power Dissipation @ TC=25℃ 62.5 Junction Temperature 150 ℃ -65~150 ℃ Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 2 ℃/W 62.5 ℃/W BD650 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD650 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -50mA -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -50mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -3V -2.5 V VCB= -100V; IE= 0 -0.2 ICBO CONDITIONS MIN TYP. MAX -100 B B B UNIT V mA Collector Cutoff Current VCB= -60V; IE= 0; TC= 150℃ -2.0 ICEO Collector Cutoff Current VCE= -50V; IB= 0 -0.5 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE DC Current Gain IC= -3A ; VCE= -3V isc Website：www.iscsemi.cn B 2 750