isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE2801T DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 60V(Min) ·High DC Current Gain: hFE= 25-100@IC= 3A ·Complement to Type MJE2901T APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers up to 35 watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE2801T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.1 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 2V 1.4 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 VCB= 60V; IE= 0;TC= 150℃ 0.1 2.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC=0 1.0 mA hFE DC Current Gain IC= 3A ; VCE= 2V isc Website：www.iscsemi.cn CONDITIONS MIN MAX 60 B 2 TYP. 25 UNIT V 100