ISC MJE2801T

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJE2801T
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO = 60V(Min)
·High DC Current Gain: hFE= [email protected]= 3A
·Complement to Type MJE2901T
APPLICATIONS
·Designed for use as an output device in complementary
audio amplifiers up to 35 watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation
@ TC=25℃
75
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.67
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJE2801T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 200mA; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
1.1
V
VBE(on)
Base-Emitter On Voltage
IC= 3A ; VCE= 2V
1.4
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
VCB= 60V; IE= 0;TC= 150℃
0.1
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 4V; IC=0
1.0
mA
hFE
DC Current Gain
IC= 3A ; VCE= 2V
isc Website:www.iscsemi.cn
CONDITIONS
MIN
MAX
60
B
2
TYP.
25
UNIT
V
100