BTA04 T/D/S/A

BTA04 T/D/S/A
BTB04 T/D/S/A
SENSITIVE GATE TRIACS
TO-220AB
FEATURES
Very low IGT = 10mA max
Low IH = 15mA max
BTA Family:
Insulating voltage = 2500V(RMS)
(UL recognized: E81734)
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DESCRIPTION
The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices.
These parts are suitables for general purpose applications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
A2
G
A1
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
RMS on-state current (360° conduction angle)
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
BTA
Tc = 90°C
BTB
Tc = 95°C
Unit
4
A
A
Non repetitive surge peak on-state current
(Tj initial = 25°C)
tp = 8.3ms
42
tp = 10ms
40
I2t value
tp = 10ms
8
A2s
Critical rate of rise of on-state current
Gate supply: IG = 50mA dIG/dt = 0.1A/µs
Repetitive
F = 50Hz
10
A/µs
Non repetitive
50
Storage and operating junction temperature range
Tl
Value
Maximum lead soldering temperature during 10s at 4.5mm from case
-40 to +150
-40 to +110
°C
260
°C
BTA / BTB04Symbol
VDRM
VRRM
Parameter
Unit
Repetitive peak off-state voltage Tj = 110°C
2014-6-9
1
400 T/D/S/A
600 T/D/S/A
700 T/D/S/A
400
600
700
V
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BTA04 T/D/S/A
BTB04 T/D/S/A
THERMAL RESISTANCE
Symbol
Parameter
Rth (j-a)
Value
Unit
60
°C/W
BTA
4.4
°C/W
BTB
3.2
BTA
3.3
BTB
2.4
Junction to ambient
Rth (j-c) DC
Rth (j-c) AC
Junction to case for DC
Junction to case for 360° conduction angle (F = 50Hz)
GATE CHARACTERISTICS (maximum values)
PG(AV) = 1W PGM = 40W (tp = 20µs) IGM = 4A (tp = 20µs)
°C/W
VGM = 16V (tp = 20µs)
ELECTRICAL CHARACTERISTICS
BTA / BTB04
Symbol
IGT
Test conditions
VD = 12V (DC)
RL = 33Ω
Quadrant
Tj = 25°C
Unit
T
D
S
A
I - II - III
MAX.
5
5
10
10
IV
MAX.
5
10
10
25
mA
VGT
VD = 12V (DC)
RL = 33Ω
Tj = 25°C
I - II - III - IV
MAX.
1.5
V
VGD
VD = VDRM
RL = 3.3kΩ
Tj =110°C
I - II - III - IV
MIN.
0.2
V
2
µs
tgt
VD = VDRM IG = 40mA
dIG/dt = 0.5A/µs
Tj = 25°C
I - II - III - IV
TYP.
IL
IG = 1.2IGT
Tj = 25°C
I - III - IV
TYP.
II
IH*
10
10
20
20
20
20
40
40
15
15
25
25
mA
IT = 100mA Gate open
Tj = 25°C
MAX.
VTM *
ITM = 5.5A
Tj = 25°C
MAX.
1.65
V
IDRM
IRRM
VDRM rated
VRRM rated
Tj = 25°C
MAX.
0.01
mA
Tj = 110°C
MAX.
0.75
Tj = 110°C
TYP.
10
10
-
-
MIN.
-
-
10
10
TYP.
1
1
5
5
dV/dt *
(dI/dt)c*
tp = 380µs
Linear slope up to
VD = 67% VDRM gate open
(dI/dt)c = 1.8A/ms
Tj = 110°C
mA
V/µs
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1
2014-6-9
2
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BTA04 T/D/S/A
BTB04 T/D/S/A
PRODUCT INFORMATION
IT(RMS)
VDRM / VRRM
A
V
T
4
400
X
600
X
700
X
400
X
600
X
Sensitivity Specification
Package
BTA
(Insulated)
BTB
(Uninsulated)
D
S
A
X
X
X
X
X
ORDERING INFORMATION
BT
A
04
-
Triac
Series
T
Sensitivity
Insulation:
A: insulated
B: non insulated
Voltage:
400: 400V
600: 600V
700: 700V
Current: 04A
2014-6-9
400
3
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BTA04 T/D/S/A
BTB04 T/D/S/A
Fig. 1: Maximum RMS power dissipation versus
RMS on-state current (F = 50Hz).(Curves are cut
off by (dI/dt)c limitation)
Fig. 2: Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTA).
Fig. 3: Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTB).
Fig. 4: RMS on-state current versus case temperature.
Fig. 5: Relative variation of thermal impedance
versus pulse duration.
Fig. 6: Relative variation of gate trigger current
and holding current versus junction temperature.
Zth/Rth
1
Zth(j-c)
0.1
Zth(j-a)
tp(s)
0.01
1E-3
1E-2
2014-6-9
1E-1
1E+0
1E+1
1E+2 5E+2
4
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BTA04 T/D/S/A
Fig. 7: Non repetitive surge peak on-state current
versus number of cycles.
BTB04 T/D/S/A
Fig. 8: Non repetitive surge peak on-state current
for a sinusoidal pulse with width: t ≤ 10ms, and corresponding value of I2t.
Fig. 9: On-state characteristics (maximum values).
2014-6-9
5
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