NN30312A VIN = 4.5 V to 30 V, 10 A Synchronous DC-DC Step down Regulator comprising of Controller IC and Power MOSFET FEATURES DESCRIPTION z High-Speed Response DC-DC Step Down Regulator Circuit that employs Hysteretic Control System z Two 11 mΩ (Typ.) MOSFETs for High Efficiency at 10 A z SKIP (discontinuous) Mode for Light Load Efficiency z Up to 10 A Output Current z Input VoltageRange : AVIN : 4.5 V to 30 V, PVIN : 4.5 V to 30 V, Output Voltage Range : 0.75 V to 5.5 V Selectable Switching Frequency 250 kHz , 750 kHz , 1250 kHz z Adjustable Soft Start z Low Operating and Standby Quiescent Current z Open Drain Power Good Indication for Output Over , Under Voltage z Built-in Under Voltage Lockout (UVLO), Thermal Shut Down (TSD), Over Voltage Detection (OVD), Under Voltage Detection (UVD), Over Current Protection (OCP), Short Circuit Protection (SCP) z HQFN040-A3-0606B ( Size : 6 mm X 6 mm, 0.5 mm pitch ), 40pin Plastic Quad Flat Non-leaded Package Heat Slug Down (QFN Type) NN30312A is a synchronous DC-DC Step down Regulator (1-ch) comprising of a Controller IC and two power MOSFETs and employs the hysteretic control system. By this system, when load current changes suddenly, it responds at high speed and minimizes the changes of output voltage. Since it is possible to use capacitors with small capacitance and it is unnecessary to add external parts for system phase compensation, this IC realizes downsizing of set and reducing in the number of external parts. Output voltage is adjustable by user. Maximum current is 10 A. APPLICATIONS High Current Distributed Power Systems such as ・HDDs (Hard Disk Drives) ・SSDs (Solid State Drives) ・PCs ・Game consoles ・Servers ・Security Cameras ・Network TVs ・Home Appliances ・OA Equipment etc. SIMPLIFIED APPLICATION EFFICIENCY CURVE VREG Frequency = 250 kHz 100 90 VOUT BST 0.1μF 4.7μH DCDCOUT 1.05 V 1.5k Ω 1k Ω AGND PGND 20 10 0 10nF 0.001 1μF 22μF x 3 SS 40 30 LX VFB VREG FCCM/ Vo= 1.05V FCCM/ Vo= 1.2V FCCM/ Vo= 1.8V FCCM/ Vo= 3.3V FCCM/ Vo= 5.0V SKIP/ Vo= 1.05V SKIP/ Vo= 1.2V SKIP/ Vo= 1.8V SKIP/ Vo= 3.3V SKIP/ Vo= 5.0V 50 Notes) This application circuit is an example. The operation of mass production set is not guaranteed. You should perform enough evaluation and verification on the design of mass production set. You are fully responsible for the incorporation of the above application circuit and information in the design of your equipment. Publication date: October 2012 1 10.000 NN30312A 1.000 AVIN 60 0.100 22μF 70 PGOOD AVIN 0.1μF 80 100k Ω 0.010 EN PVIN Efficiency (%) 22μF 0.1μF PVIN IOUT (A) Condition ) VIN = 12 V, Vout = 1.05 V , 1.2 V , 1.8V , 3.3V , 5.0 V, L = 4.7 µH, Cout = 66 µF ( 22 µF x 3 ), Frequency = 250 kHz Ver. CEB NN30312A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Notes Supply voltage VIN 33 V *1 Operating free-air temperature Topr – 40 to + 85 °C *2 Operating junction temperature Tj – 40 to + 150 °C *2 Tstg – 55 to + 150 °C *2 MODE,FSEL,VOUT,VFB, – 0.3 to (VREG + 0.3) V *1 *3 EN -0.3 to 6.0 V *1 PGOOD – 0.3 to (VREG + 0.3) V *1 *3 LX – 0.3 to ( VIN + 0.3 ) V *1 *4 HBM (Human Body Model) 2 kV — Storage temperature Input Voltage Range Output Voltage Range ESD Notes) Do not apply external currents and voltages to any pin not specifically mentioned. This product may sustain permanent damage if subjected to conditions higher than the above stated absolute maximum rating. This rating is the maximum rating and device operating at this range is not guaranteeable as it is higher than our stated recommended operating range. When subjected under the absolute maximum rating for a long time, the reliability of the product may be affected. VIN is voltage for AVIN, PVIN. AVIN = PVIN. *1:The values under the condition not exceeding the above absolute maximum ratings and the power dissipation. *2:Except for the power dissipation, operating ambient temperature, and storage temperature, all ratings are for Ta = 25 °C. *3:(VREG + 0.3) V must not be exceeded 6 V. *4:(VIN + 0.3) V must not be exceeded 33 V. POWER DISSIPATION RATING PACKAGE 40pin Plastic Quad Flat Non-leaded Package Heat Slug Down (QFN Type) θJA PD ( Ta = 25 °C) PD ( Ta = 85 °C ) Notes 44.2 °C / W 2.82 W 1.47 W *1 Note). For the actual usage, please refer to the PD-Ta characteristics diagram in the package specification, follow the power supply voltage, load and ambient temperature conditions to ensure that there is enough margin and the thermal design does not exceed the allowable value. *1:Glass Epoxy Substrate ( 4 Layers ) [ Glass-Epoxy: 50 X 50 X 0.8 t ( mm ) ] Die Pad Exposed , Soldered. CAUTION Although this has limited built-in ESD protection circuit, but permanent damage may occur on it. Therefore, proper ESD precautions are recommended to avoid electrostatic damage to the MOS gates 2 Ver. CEB NN30312A RECOMMENDED OPERATING CONDITIONS Parameter Pin Name Min. Typ. Max. Unit Notes AVIN 4.5 12 30 V — PVIN 4.5 12 30 V — MODE – 0.3 — VREG + 0.3 V *1 FSEL – 0.3 — VREG + 0.3 V *1 EN – 0.3 — 6.0 V — PGOOD – 0.3 — VREG + 0.3 V *1 LX – 0.3 — VIN + 0.3 V *2 Supply voltage range Input Voltage Range Output Voltage Range Note) Do not apply external currents and voltages to any pin not specifically mentioned. Voltage values, unless otherwise specified, are with respect to GND. GND is voltage for AGND, PGND. AGND = PGND VIN is voltage for AVIN, PVIN. AVIN = PVIN. The values under the condition not exceeding the above absolute maximum ratings and the power dissipation. *1 : (VREG + 0.3) V must not be exceeded 6 V. *2 : (VIN + 0.3) V must not be exceeded 33 V. 3 Ver. CEB NN30312A ELECRTRICAL CHARACTERISTICS Co = 22 μF X 3 (Murata), Lo= 1 μH (TDK), VOUT Setting = 3.3 V, VIN = AVIN = PVIN = 12 V, Switching Frequency = 750 kHz, MODE = VREG (FCCM), Ta = 25 °C ± 2 °C unless otherwise noted. Parameter Symbol Condition Min Limits Typ Max — 650 1000 μA — — — 2 μA — Unit Note Current Consumption Consumption current at active IVDDACT EN= 5 V, IOUT = 0 A RFB1 = 4.5 kΩ RFB2 = 1.0 kΩ MODE=GND (Skip MODE) Consumption current at standby IVDDSTB EN = 0 V Logic Pin EN pin Low-level input voltage VENL — — — 0.3 V — EN pin High-level input voltage VENH — 1.5 — 5.0 V — — 6.25 12.5 μA — EN pin leak current ILEAKEN MODE pin Low-level input voltage VMODEL — — — VREG X 0.3 V — MODE pin High-level input voltage VMODEH — VREG X 0.7 — VREG V — — 6.25 12.5 μA — MODE pin leak current ILEAKMODE EN = 5 V MODE = 5 V FSEL pin Low-level input voltage VMODEL — — — 0.3 V — FSEL pin High-level input voltage VMODEH — VREG – 0.3 — VREG V — FSEL pin leak current ILEAKMD FSEL = 5 V — 15.0 25.0 μA — VREG output voltage VREGOUT IVREG = – 20 mA 5.1 5.5 5.9 V — VREG line regulation VREGLINE VIN = 12 V to 6 V IVREG = – 20 mA — — 200 mV — VREG drop out voltage VREGDO VIN = 4.5 V IVREG = – 20 mA 4.11 — — V — VREG 4 Ver. CEB NN30312A ELECRTRICAL CHARACTERISTICS ( Continued ) Co = 22 μF X 3 (Murata), Lo= 1 μH (TDK), VOUT Setting = 3.3 V, VIN = AVIN = PVIN = 12 V, Switching Frequency = 750 kHz, MODE = VREG (FCCM), Ta = 25 °C ± 2 °C unless otherwise noted. Parameter Symbol Condition VFBTS — Min Limits Typ Max 0.594 0.600 0.606 V — Unit Note VFB Characteristics VFB comparator threshold Under Voltage Lock Out UVLO start voltage 1 VUVLODET VIN = 5 V to 0 V 3.5 3.8 4.1 V — UVLO recover voltage 1 VUVLORMV VIN = 0 V to 5 V 3.9 4.2 4.5 V — VTHPG1 PGOOD : High to Low 77 85 93 % — VHYSPG1 PGOOD : Low to High 3.5 5.0 6.5 % — VTHPG2 PGOOD : High to Low 107 115 123 % — VHYSPG2 PGOOD : Low to High 3.5 5.0 6.5 % — — 10 15 Ω — PGOOD PGOOD Threshold 1 (VFB ratio for UVD detect) PGOOD Hysteresis 1 (VFB ratio for UVD release) PGOOD Threshold 2 (VFB ratio for OVD detect) PGOOD Hysteresis 2 (VFB ratio for OVD release) PGOOD ON resistance RPG — 5 Ver. CEB NN30312A ELECRTRICAL CHARACTERISTICS ( Continued ) Co = 22 μF X 3 (Murata), Lo= 1 μH (TDK), VOUT Setting = 3.3 V, VIN = AVIN = PVIN = 12 V, Switching Frequency = 750 kHz, MODE = VREG (FCCM), Ta = 25 °C ± 2 °C unless otherwise noted. Min Limits Typ Max PVIN = 6V to 30 V IOUT = – 0.5 A — 0.25 0.75 %/V — IOUT = – 10 mA to – 10 A — 3.5 — % *1 Parameter Symbol Condition DC-DC line regulation DDREGIN DC-DC load regulation DDREGLD Unit Note DC-DC DC-DC efficiency 1 DDEFF1 IOUT = – 10 mA MODE=GND (Skip MODE) — 65 — % *1 DC-DC efficiency 2 DDEFF2 IOUT = – 5A — 88 — % *1 DC-DC output ripple voltage 1 DDVRPL1 IOUT = – 10 mA — 20 — mV [p-p] *1 DC-DC output ripple voltage 2 DDVRPL2 IOUT = – 5A — 20 — mV [p-p] *1 DC-DC load transient response DDDVAC IOUT = – 100 mA ↔ – 1.5 A Vout = 1 V Δt = 0.5 A / μs — 20 — mV *1 DC-DC High Side MOS ON resistance DDRONH VGS = 5.5 V — 11 22 mΩ — DC-DC Low Side MOS ON resistance DDRONL VGS = 5.5 V — 11 22 mΩ — DV = PVIN – VOUT — 2.5 — V *1 MIN Input and output voltage difference DV VFB Characteristics VFB pin leak current 1 ILEAKFB1 VFB = 0 V –1 — 1 μA — VFB pin leak current 2 ILEAKFB2 VFB = 6 V –1 — 1 μA — *1 ：Typical Value checked by design. 6 Ver. CEB NN30312A ELECRTRICAL CHARACTERISTICS ( Continued ) Co = 22 μF X 3 (Murata), Lo= 1 μH (TDK), VOUT Setting = 3.3 V, VIN = AVIN = PVIN = 12 V, Switching Frequency = 750 kHz, MODE = VREG (FCCM), Ta = 25 °C ± 2 °C unless otherwise noted. Parameter Min Limits Typ Max — 15.0 — A *1 FB = 0.6 V to 0.0 V 50 60 70 % — Symbol Condition DC-DC output current limit DDILMT — DC-DC Output GND Short Protection Threshold DDSHPTH Unit Note PROTECTION Soft-Start Timing SS Charge Current ISSCHG VSS = 0.3 V –4 –2 — μA — SS Discharge Resistance (Shut-down) RSSDIS EN = 0 V — 5 10 kΩ — DC-DC Switching Frequency 1 DDFSW1 IOUT = – 5 A — 250 — kHz *1 DC-DC Switching Frequency 2 DDFSW2 IOUT = – 5 A — 750 — kHz *1 DC-DC Switching Frequency 3 DDFSW3 IOUT = – 5 A — 1250 — kHz *1 Switching Frequency Adjustment *1 ：Typical Value checked by design. 7 Ver. CEB NN30312A N.C N.C FSEL EN VREG VFB SS N.C N.C Top View VOUT PIN CONFIGURATION 30 29 28 27 26 25 24 23 22 21 20 AVIN PGOOD 31 AGND 32 19 AGND 41 AGND BST 33 18 MODE N.C 34 17 35 16 PVIN 15 36 37 43 LX 42 PVIN 38 14 13 39 12 40 11 1 2 3 4 5 6 7 8 PGND 9 10 PGND LX PIN FUNCTIONS Pin No. Pin name Type Description LX Output Power MOSFET output pin PGND Ground Ground pin for Power MOSFET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Notes) Concerning detail about pin description, please refer to OPERATION and APPLICATION INFORMATION section. 8 Ver. CEB NN30312A PIN FUNCTIONS ( Continued ) Pin No. Pin name Type 18 MODE Input 19 AGND 20 AVIN 21 Ground Description Skip / FCCM mode select pin Ground pin Power supply Power supply pin N.C. - 23 FSEL Input Frequency selection pin 24 EN Input ON/OFF control pin 25 VREG Output 26 VFB Input Comparator negative input pin 27 VOUT Input Output voltage sense pin 28 SS Output N.C. - 31 PGOOD Output 22 29 30 No connection pin (don’t use pin) LDO output pin (Power supply for internal control circuit) Soft start capacitor connect pin No connection pin (don’t use pin) Power good open drain pin 32 AGND Ground Ground pin 33 BST Output Supply input pin for high side FET gate driver 34 N.C. - No connection pin (don’t use pin) 35 36 37 38 PVIN Power supply Power supply pin for Power MOSFET 39 40 41 AGND 42 PVIN 43 LX Ground Ground pin for radiation of heat Power supply Power supply pin for radiation of heat Output Power MOSFET output pin for radiation of heat Notes) Concerning detail about pin description, please refer to OPERATION and APPLICATION INFORMATION section. 9 Ver. CEB NN30312A FUNCTIONAL BLOCK DIAGRAM AVIN SS 28 EN VBG BGR VINT 20 Soft-Start SS 31 PGOOD 24 VREG VREG VREG ON / OFF 25 33 VREG : 5.5 V 27 UVLO OCP SCP TSD 35,36,37,38,39,40,42 BST PVIN 0.6 V + 15 % VOUT Fault 0.6 V – 15 % HGATE HPD 26 VFB Soft-Start Aux VREF Timer 23 FSEL VIN REF Ton Timer + Comp HGO 18 LX 0.6 V Toff Timer + Comp Control Logic ON CMP LGATE LPD Coast MODE 1,2,3,4,5,6,7,8,43 LGO PGND 9,10,11,12,13,14,15,16,17 FCCM / Skip 19,32,41 AGND Notes) This block diagram is for explaining functions. Part of the block diagram may be omitted, or it may be simplified. 10 Ver. CEB NN30312A OPERATION Note) The characteristics listed below are reference values derived from the design of the IC and are not guaranteed. 1. Protection (1).Output Over-Current Protection (OCP) function And Short-Circuit Protection (SCP) function 1) The Over Current Protection is activated at about 15 A (Typ.) During the OCP, the output voltage continues to drop at the specified current. 2) The Short-Circuit Protection function is implemented when the output voltage decreases and the VFB pin reaches to about 60 % of the set voltage of 0.6 V. 3) The SCP operates intermittently at 2 ms-ON, 16 ms OFF intervals. VFB 115 % 110 % 0.6 V 0.6 V 90 % 85 % 1 ms 1) 2) 1 ms 3) 4) PGOOD Note: PGOOD Pin is pulled up to VREG pin Figure : OVD and UVD Operation 10.5 A to 20.5 A (3).Thermal Shut Down (TSD) When the IC internal temperature becomes more than about 130 °C, TSD operates and DCDC turns off. 1) Ground short protection hysteresis Output Voltage [V] Over Current Protection ( typ : 15 A ) 2) 3) Intermittent operation area (Ground short protection Detection about 60% of Vout ) 2. Pin Setting (1).Operating Mode Setting The IC can operate at two different modes : Skip mode and Forced Continuous Conduction mode (FCCM). In Skip mode, the IC is working under pulse skipping mechanism to improve efficiency at light load condition. In FCCM mode, the IC is working at fixed frequency to avoid EMI issues. The Operating Mode can be set by MODE pin as follows. Pendency characteristics about 2 A Output current [A] Figure : OCP and SCP Operation (2).Over Voltage Detection (OVD) and Under Voltage Detection (UVD) 1).The NMOS connected to the PGOOD pin turns ON when the output voltage rises and the VFB pin voltage reaches 115 % of its set voltage (0.6 V). 2).After (1) above, the NMOS connected to the PGOOD pin is turned OFF after 1 ms when the output voltage drops and the VFB pin voltage reaches 110 % of its set voltage (0.6 V). 3).The NMOS connected to the PGOOD pin turns ON when the output voltage drops and the VFB pin voltage reaches 85 % of its set voltage (0.6 V). 4).After (3) above, the NMOS connected to the PGOOD pin is turned OFF after 1 ms when the output voltage drops and the VFB pin voltage reaches 90 % of its set voltage (0.6 V). 11 MODE pin Low High Mode Skip FCCM (2).Switching Frequency Setting The IC can operate at three different frequency : 1250 kHz, 750 kHz and 250 kHz. The Switching Frequency can be set by FSEL pin as follows. FSEL pin Low High Open Frequency [kHz] 1250 250 750 Ver. CEB NN30312A OPERATION ( Continued ) Note) The characteristics listed below are reference values derived from the design of the IC and are not guaranteed. 3. Output Voltage Setting The Output Voltage can be set by external resistance of FB pin, and its calculation is as follows. (VIN = 12 V, IOUT = 0 A, FCCM, Fsw = 750 kHz). VOUT VOUT = ( 1 + RFB1 RFB2 ) × 0.6 RFB1 VFB (0.6 V) Because the voltage of FB pin is controlled by the voltage of SS pin during start up, the voltage of FB increase straightly to the regulation voltage (0.6 V) together with the voltage of SS pin and keep the regulation voltage after that. On the other hand, the voltage of SS pin increase to about 2.8 V and keep the voltage. The calculation of Soft Start Time is as follows. Soft Start Time(sec) = RFB2 When Css is set at 10 nF, soft-start time is approximately 3ms. Below resistors are recommended for following popular output voltage. VOUT [V] 5.0 3.3 1.8 1.0 RFB1 [Ω] 11.0 k 4.5 k 2.0 k 1.0 k 0.6 × Css 2μ RFB2 [Ω] 1.5 k 1.0 k 1.0 k 1.5 k EN 4.2 V VREG Note: RFB2 can be set to a maximum value of 10 kΩ. A larger FBR2 value will be more susceptible to noise. UVLO VFB comparator threshold is adjusted to ± 1 %, but the actual output voltage accuracy becomes more than ± 1 % due to the influence from the circuits other than VFB comparator. In the case of VOUT setting = 3.3 V, the actual output voltage accuracy becomes ± 2.5 %. (VIN = 12 V, IOUT = 0 A, FCCM, Fsw = 750 kHz). 4. Soft Start Setting Soft Start Time (s) SS 0.6 V VFB VOUT Soft Start function maintains the smooth control of the output voltage during start up by adjusting soft start time. When the EN pin becomes High, the current (2 µA) begin to charge toward the external capacitor (Css) of SS pin, and the voltage of SS pin increases straightly. Figure : Soft Start Operation 12 Ver. CEB NN30312A OPERATION ( Continued ) Note) The characteristics listed below are reference values derived from the design of the IC and are not guaranteed. 5. Start-up / Shut-down Settings 6. Power ON / OFF sequence The Start-up / Shut-down is enabled by the EN pin. The EN pin can be set by either applying voltage from an external voltage source or through a resistor connected to the AVIN pin. Case 1: Setting up the EN pin using an external voltage source. When an external voltage source is used, the EN pin input voltage (VENH, VENL) should satisfy the conditions as defined in the electrical characteristics (1) When the EN pin is set to High after the VIN settles, the BGR and the VREG start-up. (2) When the VREG pin exceeds its threshold value, the UVLO is released and the SOFT START sequence is enabled. The capacitor connected to the SS pin begins to charge and the SS pin voltage increases linearly. (3) The VOUT pin (DC-DC Output) voltage increases at the same rate as the SS pin. Normal operation begins after the VOUT pin reaches the set voltage. (4) When the EN pin is set to “Low”, the BGR, VREG and UVLO stop operation. The VOUT pin / SS pin Voltage starts to drop and the VOUT pin discharge time depends on the value of the Feedback resistors and the output load current. AVIN 5 V (Max.) VREG EN 24 0V Figure : Internal circuit with EN pin Note: The SS pin capacitor should be discharged completely before restarting the startup sequence. An incomplete discharge process might result in an overshoot of the output voltage. Case 2: Setting up the EN pin through a resistor connected to AVIN pin. When setting up the EN pin through a resistor connected to the AVIN pin, refer to equations (1) and (2) to calculate the optimal resistor settings. VIN AVIN – Vd Equation (1) : REN1 > Id Equation (2) : REN1 < (AVIN – VENH) × REN2 VENH EN Equation (1) : REN1 > 12 V – 6 V 100 µA VREG Equation (2) : REN1 < (12 V – 5 V) × 400 kΩ = 560 kΩ 5V = 60 kΩ 4.2 V UVLO Soft Start Time (s) = AVIN VREG SS AVIN REN1 0.6 × Css 2µ 0.6 V VFB EN 24 500 VOUT Delay Time (s) = 0.09 × Css + 1 m 2µ REN2 : 800 kΩ ± 50 % PGOOD Vd : 5.7 V ± 0.3 V Id : more than 100 μA (1) (2) (3) Figure : Internal circuit with EN pin (4) Figure : Power ON/OFF sequence 13 Ver. CEB NN30312A OPERATION ( Continued ) Note) The characteristics listed below are reference values derived from the design of the IC and are not guaranteed. 7. Inductor and Output Capacitor Setting IL Io Lo ≥ 0 Eo ⋅ (Ei − Eo ) @ Ei = Ei_max 2 Ei ⋅ Iox ⋅ f And its maximum current rating is ⊿IL/2 IL_max = Io_max + 0 Ic ⊿IL/2 Vo Eo Vrpl Ton Ei Lo Q2 ΔIL Co ⋅ Rc 2 + Vrpl = Vop − Vob = Ei ⋅ 2 Lo 8Co ⋅ f From the above equation, to achieve desired output ripple, low ESR ceramic capacitors are recommended, and its required RMS current rating is: Vo(Eo) IL The selection of COUT is primarily determined by the ESR (Rc) required to minimize voltage ripple and load transients. The output ripple Vrpl is approximately bounded by: Co ⋅ Rc 2 Eo ⋅ (Ei − Eo ) = Ei ⋅ + 2 Lo 8Ei ⋅ Lo ⋅ Co ⋅ f 2 T=1/f Q1 ΔIL (@ Ei = Ei_max) 2 Ic Io Co Ic(rms)_max = Rc ΔIL (@ Ei = Ei_max) 2 3 Given the desired input and output voltages, the inductor value and operating frequency determine the ripple Current. ΔIL = Eo ⋅ (Ei − Eo ) Ei ⋅ Lo ⋅ f Iox = ΔIL 2 Highest efficiency operation is obtained at low frequency with small ripple current. However, achieving this requires a large inductor. There is a trade-off among component size, efficiency and operating frequency. A reasonable starting point is to choose a ripple current that is about 40 % of IOUT(MAX). The largest ripple current occurs at the highest VIN. To guarantee that ripple current does not exceed a specified maximum, the inductance should be chosen according to: 14 Ver. CEB NN30312A TYPICAL CHARACTERISTICS CURVES (1) Output Ripple Voltage Condition : VIN=12V,Vout = 1.05V,Frequency = 750kHz,Skip Mode I Load = 0A I Load = 3A Vout Vout LX LX I Load = 6A I Load = 10A Vout Vout LX LX 15 Ver. CEB NN30312A TYPICAL CHARACTERISTICS CURVES ( Continued ) (1) Output Ripple Voltage Condition : VIN=12V,Vout = 1.05V,Frequency = 750kHz,FCCM Mode I Load = 0A I Load = 3A Vout Vout LX LX I Load = 6A I Load = 10A Vout Vout LX LX 16 Ver. CEB NN30312A TYPICAL CHARACTERISTICS CURVES ( Continued ) (2) Load transient Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, Iout = 10 mA ÅÆ 10 A ( 0.5 A / μs ) Skip Mode VOUT (50 mV/div) FCCM Mode VOUT (50 mV/div) 16.5mV 11mV 10.5mV 10.5mV IOUT (10 A/div) IOUT (10 A/div) Time (100 us/div) Time (100 us/div) Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, Iout = 1 A ÅÆ 10 A ( 0.4 A / μs ) Skip Mode FCCM Mode VOUT (50 mV/div) VOUT (50 mV/div) 10mV 9.5mV 10.5mV 10mV IOUT (10 A/div) IOUT (10 A/div) Time (100 us/div) Time (100 us/div) Condition : Vin = 12 V, Vout = 1.05 V / 1.2 V / 1.8V / 3.3V / 5.0 V, L = 4.7 μH, Cout = 66 μF (22 μF x 3), Frequency = 250 kHz Condition : Vin = 12 V, Vout = 1.05 V / 1.2 V / 1.8V / 3.3V / 5.0 V, L = 1 μH, Cout = 66 μF (22 μF x 3), Frequency = 750kHz (3) Efficiency Frequency = 750 kHz 90 90 80 80 70 70 Efficiency (%) 100 60 FCCM/ Vo= 1.05V FCCM/ Vo= 1.2V FCCM/ Vo= 1.8V FCCM/ Vo= 3.3V FCCM/ Vo= 5.0V SKIP/ Vo= 1.05V SKIP/ Vo= 1.2V SKIP/ Vo= 1.8V SKIP/ Vo= 3.3V SKIP/ Vo= 5.0V 20 10 0 10.000 1.000 0.100 0.010 0 IOUT (A) 10.000 10 30 1.000 20 FCCM/ Vo= 1.05V FCCM/ Vo= 1.2V FCCM/ Vo= 1.8V FCCM/ Vo= 3.3V FCCM/ Vo= 5.0V SKIP/ Vo= 1.05V SKIP/ Vo= 1.2V SKIP/ Vo= 1.8V SKIP/ Vo= 3.3V SKIP/ Vo= 5.0V 40 0.100 30 50 0.010 40 60 0.001 50 0.001 Efficiency (%) Frequency = 250 kHz 100 IOUT (A) 17 Ver. CEB NN30312A TYPICAL CHARACTERISTICS CURVES ( Continued ) (4) Load regulation Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 250 kHz Load regulation_f = 250kHz (FC CM m ode) 1.100 1.080 1.080 1.060 1.060 VOUT (V) 1.040 1.020 1.040 1.020 IOUT (A) 10 9 8 7 6 5 4 3 2 0 10 9 8 7 6 5 4 3 2 1 1.000 0 1.000 1 VOUT (V) Load Regulation_f = 250kHz (skip m ode) 1.100 IOUT (A) Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz Load Regulation_f = 750kHz (FCCM mode) 1.080 1.080 1.060 1.060 10 9 8 7 6 5 4 0 10 9 8 7 6 5 4 1.000 3 1.000 2 1.020 1 1.020 3 1.040 2 1.040 1 VOUT (V) 1.100 0 VOUT (V) Load Regulation_f = 750kHz (skip m ode) 1.100 IOUT (A) IOUT (A) (5) Line regulation Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, Iout = 1.5 A Line Regulation_f = 750kHz (FCC M mode) Line Regulation_f = 750kHz (skip mode) 1.40 1.20 1.00 1.00 30 25 20 30 0.00 25 0.00 20 0.20 15 0.20 10 0.40 5 0.40 15 0.60 10 0.60 0.80 5 0.80 0 VOUT (V) 1.20 0 VOUT (V) 1.40 V IN (V ) V IN (V ) 18 Ver. CEB NN30312A TYPICAL CHARACTERISTICS CURVES ( Continued ) (6) start/shut down Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, SKIP mode, Iout = 0 A EN EN SS SS VOUT VOUT Time = 10ms/div Time = 10ms/div Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, FCCM mode, Iout = 0 A EN EN SS SS VOUT VOUT Time = 10ms/div Time = 10ms/div Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, SKIP mode, Rload = 0.5 Ω EN EN SS SS VOUT VOUT Time = 10ms/div Time = 10ms/div Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, FCCM mode, Rload = 0.5 Ω EN EN SS SS VOUT VOUT Time = 10ms/div Time = 10ms/div 19 Ver. CEB NN30312A TYPICAL CHARACTERISTICS CURVES ( Continued ) (7) Short Current Protection Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz Skip Mode FCCM Mode LX LX SS SS VOUT VOUT IOUT IOUT Time = 10ms/div Time = 10ms/div (8) Switching Frequency Condition : Vin = 12 V, Vout = 1.05 V, Frequency = 750 kHz, Iout = 10 mA ~ 10 A LX Average Frequency (MHz) FCCM Mode 0.9 0.9 0.8 0.8 LX Average Frequency (MHz) LX Average Frequency (MHz) LX Average Frequency (MHz) Skip Mode 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 0.1 1 10 0.01 ILOAD (A) 0.1 1 ILOAD (A) 10 Condition : Vout = 1.05 V, Frequency = 750 kHz, Iout = 5 A LX Average Frequency (MHz) FCCM Mode 0.90 0.90 0.85 0.85 LX Average Frequency (MHz) LX Average Frequency (MHz) LX Average Frequency (MHz) Skip Mode 0.80 0.75 0.70 0.65 0.60 0.80 0.75 0.70 0.65 0.60 0.55 0.55 0.50 0.50 4 6 8 10 12 14 16 18 VIN(V) 20 22 24 26 28 30 4 6 8 10 12 14 16 18 20 22 24 26 28 30 VIN(V) 20 Ver. CEB NN30312A TYPICAL CHARACTERISTICS CURVES ( Continued ) (9) Thermal Performance Condition : VIN=12V , Vout = 1.05V , Frequency = 750kHz , ILoad = 6A , FCCM Mode 21 Ver. CEB NN30312A APPLICATIONS INFORMATION C-PVIN5 C-PVIN6 Condition : Vout = 3.3 V, Frequency = 750 kHz, SKIP mode 27 4 26 5 C-SS C-VREG 3 VFB VREG 8 FSEL EN 20 VOUT L-LX LX R-FBX VFB C-DCDCOUT1 C-DCDCOUT2 C-DCDCOUT3 AVIN L-LX SS VOUT C-VREG C-AVIN1 C-AVIN2 AVIN AGND MODE PGND 24 7 19 23 6 91011121314151617 18 EN C-PVIN5 C-PVIN6 VOUT VOUT R-FBX AVIN C-AVIN2 C-AVIN1 C-DCDCOUT1 C-DCDCOUT2 C-DCDCOUT3 35 36 37 38 39 40 28 33 2 25 SS R-FB4 R-FB3 R-FB2 R-FB1 AGND PGOOD PVIN BST 32 1 LX PVIN C-BST 31 C-BST R-PG PVIN DCDCOUT PGND Figure : layout Figure : Application circuit NN30312A Figure : Top Layer with silk screen ( Top View ) with Evaluation board Figure : Bottom Layer with silk screen ( Bottom View ) with Evaluation board Notes) This application circuit and layout is an example. The operation of mass production set is not guaranteed. You should perform enough evaluation and verification on the design of mass production set. You are fully responsible for the incorporation of the above application circuit and information in the design of your equipment. 22 Ver. CEB NN30312A APPLICATIONS INFORMATION ( Continued ) Reference Designator QTY Value Manufacturer Part Number Note C-AVIN1 2 10 μF TAIYO YUDEN UMK325AB7106MM-T — C-AVIN2 1 0.1 μF Murata GRM188R72A104KA35L — C-BST 1 0.1 μF Murata GRM188R72A104KA35L — C-DCDCOUT 3 22 μF Murata GRM32ER71E226KE15L — C-PVIN5 2 10 μF TAIYO YUDEN UMK325AB7106MM-T — C-PVIN6 1 0.1 μF Murata GRM188R72A104KA35L — C-SS 1 10 nF Murata GRM188R72A103KA01L — C-VREG 1 1.0 μF Murata GRM188R71E105KA12L — L-LX 1 1.0 μH TDK SPM6530-1R0M120 FSEL GND ( 1250 kHz ) OPEN ( 750 kHz ) 4.7 μH TOKO FDA1254-4R7M FSEL VREG ( 250 kHz ) R-FB1 1 3.3 kΩ Panasonic ERJ3EKF3301V — R-FB2 1 1.2 kΩ Panasonic ERJ3EKF1201V — R-RB3 1 1.0 kΩ Panasonic ERJ3EKF1001V — R-FB4 1 0 Panasonic ERJ3GEY0R00V — R-PG 1 100 kΩ Panasonic ERJ3EKF1003V — Figure : Recommended component 23 Ver. CEB NN30312A PACKAGE INFORMATION ( Reference Data ) Outline Drawing Unit : mm 24 Ver. CEB NN30312A PACKAGE INFORMATION ( Reference Data ) Power dissipation (Supplementary explanation) 25 Ver. CEB NN30312A IMPORTANT NOTICE 1.The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. 2.When using the LSI for new models, verify the safety including the long-term reliability for each product. 3.When the application system is designed by using this LSI, be sure to confirm notes in this book. Be sure to read the notes to descriptions and the usage notes in the book. 4.The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information de-scribed in this book. 5.This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 6.This LSI is intended to be used for general electronic equipment. Consult our sales staff in advance for information on the following applications: Special applications in which exceptional quality and reliability are required, or if the failure or malfunction of this LSI may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (1) Space appliance (such as artificial satellite, and rocket) (2) Traffic control equipment (such as for automobile, airplane, train, and ship) (3) Medical equipment for life support (4) Submarine transponder (5) Control equipment for power plant (6) Disaster prevention and security device (7) Weapon (8) Others : Applications of which reliability equivalent to (1) to (7) is required It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the LSI described in this book for any special application, unless our company agrees to your using the LSI in this book for any special application. 7.This LSI is neither designed nor intended for use in automotive applications or environments unless the specific product is designated by our company as compliant with the ISO/TS 16949 requirements. Our company shall not be held responsible for any damage incurred by you or any third party as a result of or in connection with your using the LSI in automotive application, unless our company agrees to your using the LSI in this book for such application. 8.If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 9. Please use this product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Our company shall not be held responsible for any damage incurred as a result of your using the LSI not complying with the applicable laws and regulations. 26 Ver. CEB NN30312A USAGE NOTES 1. When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. 2. Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. 3. Pay attention to the direction of LSI. When mounting it in the wrong direction onto the PCB (printed-circuit-board), it might smoke or ignite. 4. Pay attention in the PCB (printed-circuit-board) pattern layout in order to prevent damage due to short circuit between pins. In addition, refer to the Pin Description for the pin configuration. 5. Perform a visual inspection on the PCB before applying power, otherwise damage might happen due to problems such as a solder-bridge between the pins of the semiconductor device. Also, perform a full technical verification on the assembly quality, because the same damage possibly can happen due to conductive substances, such as solder ball, that adhere to the LSI during transportation. 6. Take notice in the use of this product that it might break or occasionally smoke when an abnormal state occurs such as output pin-VCC short (Power supply fault), output pin-GND short (Ground fault), or output-to-output-pin short (load short) . And, safety measures such as an installation of fuses are recommended because the extent of the abovementioned damage and smoke emission will depend on the current capability of the power supply. 7. The protection circuit is for maintaining safety against abnormal operation. Therefore, the protection circuit should not work during normal operation. Especially for the thermal protection circuit, if the area of safe operation or the absolute maximum rating is momentarily exceeded due to output pin to VCC short (Power supply fault), or output pin to GND short (Ground fault), the LSI might be damaged before the thermal protection circuit could operate. 8. Unless specified in the product specifications, make sure that negative voltage or excessive voltage are not applied to the pins because the device might be damaged, which could happen due to negative voltage or excessive voltage generated during the ON and OFF timing when the inductive load of a motor coil or actuator coils of optical pick-up is being driven. 9. The product which has specified ASO (Area of Safe Operation) should be operated in ASO 10. Verify the risks which might be caused by the malfunctions of external components. 11. Connect the metallic plates on the back side of the LSI with their respective potentials (AGND, PVIN, LX). The thermal resistance and the electrical characteristics are guaranteed only when the metallic plates are connected with their respective potentials. 27 Ver. CEB Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202