CM100RX-12A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMOD™ + Brake NX-Series Module 100 Amperes/600 Volts AN AH AL AK AJ R AD AL AL AM AL AM AM AK A D E F G AP AJ AT AR DETAIL "A" AA(4 PLACES) 35 P AUAL 12 11 10 TS NM L KB 9 AVAL 8 7 R Q U V AQ AS 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 J RQ AL AM AM H AE AL 6 36 P 5 1 2 3 AW 4 H J AF AG C BC BD AC BB X Y Q P R Z W Z Z P(35) BE DETAIL "B" TH1 (11) GUP(34) B(4) AB (6 PLACES) GVP(26) EUP(33) EVP(25) TH2 (10) GWP(18) EWP(17) U(1) V(2) W(3) GUN(30) GVN(22) GWN(14) EUN(29) EVN(21) EWN(13) NTC AL GB(6) DETAIL "A" EB(5) AZ BA AX AY DETAIL "B" *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 N(36) Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S T U V W X Y Z AA AB AC Rev. 3/09 Inches 5.39 3.03 Millimeters 136.9 77.1 0.67+0.04/-0.0217.0+1.0/-0.5 4.79 121.7 4.33±0.02 110.0±0.5 3.89 99.0 3.72 94.5 0.83 21.14 0.37 6.5 2.44 62.0 2.26 57.5 1.97±0.02 50.0±0.5 1.53 39.0 0.24 6.0 0.48 12.0 0.67 17.0 1.53 39.0 0.87 22.0 0.55 14.0 0.54 13.64 0.33 8.5 0.53 13.5 0.81 20.71 0.9 22.86 0.22 Dia. 5.5 Dia. M5 M5 0.06 1.5 Dimensions AD AE AF AG AH AJ AK AL AM AN AP AQ AR AS AT AU AV AW AX AY AZ BA BB BC BD BE Inches 0.51 0.12 0.21 0.49 0.81 0.30 0.28 0.15 0.45 0.14 0.16 0.78 0.03 0.27 0.16 0.61 0.60 0.46 0.04 0.02 0.29 0.05 0.49 0.17 Dia. 0.10 Dia. 0.08 Dia. Millimeters 13.0 3.0 5.4 12.5 20.5 7.75 7.25 3.81 11.44 3.5 4.06 20.05 0.8 7.0 4.2 15.48 15.24 11.66 1.15 0.65 7.4 6.2 12.5 4.3 Dia. 2.5 Dia. 2.1Dia. Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration and a seventh IGBT with freewheel diode for dynamic braking. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM100RX-12A is a 600V (VCES), 100 Ampere Six-IGBTMOD™ + Brake Power Module. Type Current Rating Amperes VCES Volts (x 50) CM100 12 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM100RX-12A Six IGBTMOD™ + Brake NX-Series Module 100 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics SymbolCM100RX-12AUnits Power Device Junction Temperature Tj -40 to 150 °C Tstg -40 to 125 °C Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M5 Main Terminal Screws — 31 in-lb Module Weight (Typical) — 330 Grams Baseplate Flatness, On Centerline X, Y (See Below) — ±0 ~ +100 µm Storage Temperature Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500Volts Inverter Sector Collector-Emitter Voltage (G-E Short) VCES 600Volts Gate-Emitter Voltage (C-E Short) VGES ±20Volts Collector Current (TC = 75°C)*1IC Peak Collector Current (Pulse)*3I Emitter Current (TC = 25°C)*1 Peak Emitter Current*3I 100Amperes CM 200Amperes IE*2 100Amperes *2 200Amperes EM Maximum Collector Dissipation (TC = 25°C)*1*4PC 400Watts Brake Sector Collector-Emitter Voltage (G-E Short) VCES 600Volts Gate-Emitter Voltage (C-E Short) VGES ±20Volts Collector Current (TC = 97°C)*1IC 50Amperes Peak Collector Current (Pulse)*3ICM 100Amperes Maximum Collector Dissipation (TC = 25°C)*1*4PC 280Watts VRRM*2600Volts Repetitive Peak Reverse Voltage (Clamp Diode Part) Forward Current (TC = 25°C)*1IF*2 50Amperes Forward Current (Pulse)*3IFM*2 100Amperes *1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip. *2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). IF, IFM, IRRM, VFM and VRRM represent ratings and characteristics of the clamp diode. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond Tj(max) rating. CHIP LOCATION (TOP VIEW) BASEPLATE FLATNESS MEASUREMENT POINT Chip Location (Top View) 99.5 88.4 78.8 50.7 41.2 31.7 Y NTC Thermistor 22.2 FWDi 0 0 0 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 UP UP 36 UN UN VP VP WP WN WP VN 12 Br Th 11 9 8 WN Br 3 30.4 7 6 41.2 4 96.8 41.2 22.2 + : CONVEX HEATSINK SIDE 2 21.3 10 5 1 0 VN 88.4 24.8 29.4 32.2 36.8 79.4 35 – : CONCAVE 50.7 X 31.7 + : CONVEX HEATSINK SIDE – : CONCAVE IGBT Dimensions in mm (Tolerance: ±1mm) 2 Rev. 3/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM100RX-12A Six IGBTMOD™ + Brake NX-Series Module 100 Amperes/600 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Inverter Sector Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V — — 1.0 mA VGE(th) IC = 10mA, VCE = 10V 5 6 7 Volts IGES VGE = VGES, VCE = 0V — — 0.5 µA VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C*5 — 1.7 2.1 Volts Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG Units IC = 100A, VGE = 15V, Tj = 125°C*5 — 1.9 — Volts IC = 100A, VGE = 15V, Chip — 1.6 — Volts — — 13.3 nF VCE = 10V, VGE = 0V — — 1.4 nF — — 0.45 nF VCC = 300V, IC = 100A, VGE = 15V — 270 — nC — — 100 ns VCC = 300V, IC = 100A, — — 100 ns Inductive Turn-on Delay Time td(on) Load Turn-on Rise Time tr Switch Turn-off Delay Time td(off) VGE = ±15V, — — 300 ns Time Turn-off Fall Time tf RG = 6.2Ω, IE = 100A, — — 600 ns Inductive Load Switching Operation — — 200 ns — 4.8 — µC *2 Reverse Recovery Time trr Reverse Recovery Charge Qrr*2 Emitter-Collector Voltage VEC*2 IE = 100A, VGE = 0V, Tj = 25°C*5 — 2.0 2.8 Volts IE = 100A, VGE = 0V, Tj = 125°C*5 — 1.95 — Volts IE = 100A, VGE = 0V, Chip — 1.9 — Volts Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions IGBT*1 Thermal Resistance, Junction to Case** Rth(j-c)Q Per — — 0.31 °C/W Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi*1 — — 0.59 °C/W Rth(j-f) Case to Heatsink (Per 1 Module) — 0.015 — °C/W Contact Thermal Resistance** Thermal Grease Applied*1*7 Internal Gate Resistance RGint External Gate Resistance RG TC = 25°C — 0 — Ω 6 — 62 Ω **Thermal resistance values are per 1 element. *1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip. *2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). IF, IFM, IRRM, VFM and VRRM represent ratings and characteristics of the clamp diode. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. Rev. 3/09 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM100RX-12A Six IGBTMOD™ + Brake NX-Series Module 100 Amperes/600 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Brake Sector Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA VGE(th) IC = 5mA 5 6 7 Volts IGES VGE = VGES, VCE = 0V — — 0.5 µA VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C*5 — 1.7 2.1 Volts IC = 50A, VGE = 15V, Tj = 125°C*5 — 1.9 — Volts IC = 50A, VGE = 15V, Chip — 1.6 — Volts — — 9.3 nF VCE = 10V, VGE = 0V — — 1.0 nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG Repetitive Reverse Current IRRM*2 Forward Voltage Drop VFM*2 — — 0.3 nF VCC = 300V, IC = 50A, VGE = 15V — 200 — nC VR = VRRM — — 1.0 mA IF = 50A, Tj = 25°C*5 — 2.0 2.8 Volts IF = 50A, Tj = 125°C*5 — 1.95 — Volts — 1.9 — Volts IF = 50A, Chip Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case** Rth(j-c)Q Per IGBT*1 — — 0.44 °C/W Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi*1 — — 0.85 °C/W Rth(j-f) Case to Heatsink (Per 1 Module) — 0.015 — °C/W — 0 — Ω 13 — 125 Ω Contact Thermal Resistance** Thermal Grease Internal Gate Resistance RGint External Gate Resistance RG Applied*1*7 TC = 25°C NTC Thermistor Sector, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance R TC = 25°C*1 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R –7.3 — +7.8 % — 3375 — K — — 10 mW B Constant Power Dissipation B(25/50) P25 TC = 100°C, R100 = 493Ω*1 B = (InR1 – InR2) / (1/T1 – 1/T2)*6 TC = 25°C*1 **Thermal resistance values are per 1 element. *1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip. *2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). IF, IFM, IRRM, VFM and VRRM represent ratings and characteristics of the clamp diode. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. 4 Rev. 3/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM100RX-12A Six IGBTMOD™ + Brake NX-Series Module 100 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) 200 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 150 11 100 50 10 8 9 0 2 4 6 8 1.0 0.5 50 0 100 150 IC = 200A 6 IC = 100A 4 IC = 40A 2 0 200 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 102 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 1.5 8 COLLECTOR-CURRENT, IC, (AMPERES) 102 0 1 2 3 101 Cies 100 Coes Cres 10-1 100 101 102 103 102 td(on) tf td(off) tr VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive Load 101 100 101 102 103 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) GATE CHARGE VS. VGE (INVERTER PART) 103 td(off) tr td(on) 102 101 100 VCC = 300V VGE = ±15V IC = 100A Tj = 125°C Inductive Load 101 GATE RESISTANCE, RG, (Ω) 102 REVERSE RECOVERY, Irr (A), trr (ns) tf 20 VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 25°C Inductive Load 102 101 101 20 104 VGE = 0V 10-2 10-1 4 103 SWITCHING TIME, (ns) 2.0 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Tj = 25°C Tj = 125°C Rev. 3/09 2.5 0 10 103 101 3.0 SWITCHING TIME, (ns) 0 10 VGE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 3.5 Tj = 25°C VGE = 20V 12 13 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 103 IC = 100A 16 VCC = 200V VCC = 300V 12 8 4 0 0 100 200 300 400 GATE CHARGE, QG, (nC) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM100RX-12A Six IGBTMOD™ + Brake NX-Series Module 100 Amperes/600 Volts SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 10-1 101 102 103 100 10-1 100 101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 300V VGE = ±15V IE = 100A Tj = 125°C Inductive Load 100 10-1 100 Err 10-1 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 101 101 10-2 102 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - TYPICAL) 10-2 10-3 Tj = 25°C Tj = 125°C 100 10-1 101 10-2 2 3 FORWARD VOLTAGE, VF, (VOLTS) 6 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) FORWARD CURRENT, IF, (AMPERES) 102 1 10-1 101 100 10-2 10-4 4 10-3 10-3 10-3 10-3 10-1 3.5 VGE = 15V Tj = 25°C Tj = 125°C 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 COLLECTOR-CURRENT, IC, (AMPERES) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (BRAKE PART - TYPICAL) 10-2 103 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (BRAKE PART - TYPICAL) 101 10-1 10-5 102 EMITTER CURRENT, IE, (AMPERES) TIME, (s) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (BRAKE PART - TYPICAL) 0 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W (IGBT) Rth(j-c) = 0.59°C/W (FWDi) GATE RESISTANCE, RG, (Ω) 100 Err GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) 102 102 VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive Load 100 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive Load Eon Eoff 101 101 VCC = 300V VGE = ±15V IC = 100A Tj = 125°C Inductive Load Eon Eoff REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 101 100 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (INVERTER PART - TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (INVERTER PART - TYPICAL) 100 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.44°C/W (IGBT) Rth(j-c) = 0.85°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) Rev. 3/09