CM150DC-24NFM Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT NFM-Series Module 150 Amperes/1200 Volts F A F X Y Y Y Z G G2 B E N W J K C2E1 AA L (4 PLACES) E2 C1 AB AA P D T Q Z E2 Z E1 H G G1 Z M (3 PLACES) V - TAB (4 PLACES) Description: Powerex NFM IGBT Modules are designed for use in hard switching (15-30kHz) applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management Q S C U R C1 G1 E1 C2E1 G2 E2 E2 Outline Drawing and Circuit Diagram Dim. Inches Dim. Inches Millimeters A 4.25 108.0 P 3.15 80.0 2.44 62.0 Q 0.11 3.0 R 0.91 23.2 Millimeters B C D 3.66±0.01 93.0±0.25 S 0.31 8.0 E 1.89±0.01 48.0±0.25 T 1.93 49.0 F 1.10 28.0 U 0.14 3.5 G 0.23 6.0 V H 0.67 17.0 W 1.18 30.0 J 0.79 20.0 X 0.62 18.5 K 0.39 10.0 Y 0.47 12.0 L 0.26 Dia. 6.5 Dia. Z 0.02 0.5 M M6 M6 AA 0.88 22.5 N 1.38 35.0 AB 0.98 25.0 02/07 1.19+0.04/-0.02 30.4+1.0/-0.5 #110 Tab Features: £ Low Drive Power £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ UPS £ Battery Powered Supplies £ Induction Heating Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM150DC-24NFM is a 1200V (VCES), 150 Ampere Dual IGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 150 24 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150DC-24NFM Dual IGBT NFM-Series Module 150 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM150DC-24NFM Units Tj –40 to 150 °C Junction Temperature Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 150 Amperes ICM 300* Amperes IE 150 Amperes Peak Emitter Current** IEM 300* Amperes Maximum Collector Dissipation*** (TC = 25°C)**** PC 960 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 375 Grams VISO 2500 Volts Collector Current Peak Collector Current Emitter Current** Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage***** VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C — 3.0 4.5 Volts IC = 150A, VGE = 15V, Tj = 125°C — 3.0 — Volts Total Gate Charge QG VCC = 600V, IC = 150A, VGE = 15V — 680 — nC Emitter-Collector Voltage** VEC IE = 150A, VGE = 0V — 2.3 3.3 Volts Min. Typ. Max. Units 24 Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies — — Output Capacitance***** Coes — — VCE = 10V, VGE = 0V Reverse Transfer Capacitance Cres — — Inductive Turn-on Delay Time td(on) — — Load Rise Time Switch Turn-off Delay Time Time Fall Time nF 2.0 nF 0.45 nF 150 ns tr VCC = 600V, IC = 150A, — — 80 ns td(off) VGE1 = VGE2 = 15V, RG = 2.1Ω, — — 400 ns tf Inductive Load — 60 200 ns Diode Reverse Recovery Time** trr Switching Operation, — 80 130 ns Diode Reverse Recovery Charge** Qrr IE = 150A — 7.0 — µC *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***Junction temperature (Tj) should not increase beyond 150°C. ****TC , Tf measured point is just under the chips. *****Pulse width and repetition rate should be such as to cause neglible temperature rise. 02/07 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150DC-24NFM Dual IGBT NFM-Series Module 150 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Typ. Max. Units Rth(j-c)Q Per IGBT 1/2 Module, — — 0.13 °C/W — — 0.28 °C/W — 0.02 — °C/W 2.1 — 21 Ω Thermal Resistance, Junction to Case TC Measured Point Just Under Chips Rth(j-c)D Per FWDi 1/2 Module, Contact Thermal Resistance, TC Measured Point Just Under Chips Rth(c-f) Per 1/2 Module, Thermal Grease Applied Case to Fin External Gate Resistance RG 250 12 200 150 10 100 9 50 8 0 2 4 6 8 3 2 1 0 50 100 150 200 250 8 IC = 300A IC = 150A 6 IC = 60A 4 2 0 300 Tj = 25°C 6 8 10 12 14 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE, Cies, Coes, Cres, (nF) td(off) 101 Cies 101 Coes 100 102 tf td(on) 101 VCC = 600V VGE = ±15V RG = 2.0Ω Tj = 125°C Inductive Load tr Cres VGE = 0V 1 2 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 02/07 20 103 102 102 0 18 COLLECTOR-CURRENT, IC, (AMPERES) VGE = 0V Tj = 25°C Tj = 125°C 100 16 COLLECTOR CURRENT, IC, (AMPERES) 103 EMITTER CURRENT, IE, (AMPERES) 4 0 10 VGE = 15V Tj = 25°C Tj = 125°C SWITCHING TIME, (ns) 0 10 5 Tj = 25°C 15 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 300 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 3 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 100 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150DC-24NFM Dual IGBT NFM-Series Module 150 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 Irr trr 102 101 103 VCC = 400V 15 VCC = 600V 10 5 0 0 200 EMITTER CURRENT, IE, (AMPERES) SWITCHING LOSS, Err, (mJ/PULSE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 101 Eon Eoff 101 102 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 10-1 10-2 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 800 100 101 1000 VCC = 600V VGE = ±15V RG = 2.0Ω Tj = 125°C Inductive Load 101 100 101 102 102 103 COLLECTOR CURRENT, IC, (AMPERES) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 102 COLLECTOR CURRENT, IC, (AMPERES) GATE RESISTANCE, RG, (Ω) 100 600 REVERSE RECOVERY SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 102 VCC = 600V VGE = ±15V IC = 150A Tj = 125°C Inductive Load 100 100 400 101 VCC = 600V VGE = ±15V RG = 2.0Ω Tj = 125°C Inductive Load Eon Eoff GATE CHARGE, QG, (nC) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 102 102 IC = 150A SWITCHING LOSS, Err, (mJ/PULSE) 101 101 20 SWITCHING LOSS, E(on), E(off), (mJ/PULSE) 102 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) VCC = 600V VGE = ±15V RG = 2.0Ω Tj = 125°C Inductive Load REVERSE RECOVERY CURRENT, Irr, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE 103 VCC = 600V VGE = ±15V IC = 150A Tj = 125°C Inductive Load 101 100 100 101 102 GATE RESISTANCE, RG, (Ω) 101 10-1 Single Pulse TC = 25°C Under the Chip Per Unit Base = Rth(j-c) = 0.13°C/W (IGBT) Rth(j-c) = 0.28°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 02/07