CM500HA-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Single IGBTMOD™ A-Series Module 500 Amperes/1700 Volts H G E F D J W - DIA. (4 TYP.) K y P Q E C E x N M L G C B A R U - THD. (2 TYP.) V -THD. (2 TYP.) S T E Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking C E G Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters N 0.39 10.0 A 4.25 108.0 B 3.66±0.01 93.0±0.25 P 0.39 10.0 Q 0.51 13.0 0.33 8.5 C 0.63 16.0 D 0.30 7.5 R S 1.42+0.04/-0.02 36.0+1.0/-0.5 1.02+0.04/-0.02 25.8+1.0/-0.5 E 0.69 17.5 F 1.14 29.0 T U M6 Metric M6 G 0.79 20.0 H 0.94 24.0 V M4 Metric M4 W 0.256 6.5 J 0.31 7.9 K 0.24 6.0 X 0.79 20.0 Y 0.35 9.0 L 2.44 62.0 M 1.89±0.01 48.0±0.25 02/10 Rev. 1 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Applications: £ DC Chopper £ Inverter £ UPS £ Forklift Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM500HA-34A is a 1700V (VCES), 500 Ampere Single IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 500 34 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM500HA-34A Single IGBTMOD™ A-Series Module 500 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM500HA-34A Units Tj –40 to 150 °C Junction Temperature Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1700 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 500 Amperes Peak Collector Current (Pulse, Repetitive)*2 ICM 1000 Amperes Emitter Current (DC, TC = 25°C)*4 IE*1 500 Amperes IEM*1 1000 Amperes Maximum Collector Dissipation (TC = 25°C)*2,*4 PC 5000 Watts Mounting Torque, M6 Main Terminal — 26 in-lb Mounting Torque, M6 Mounting — 26 in-lb Mounting Torque, M4 G(E) Terminal — 13 in-lb Weight — 480 Grams VISO 3500 Volts Collector Current (DC, TC = 110°C)*4 Peak Emitter Current (Pulse, Repetitive)*2 Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 3.0 µA Gate-Emitter Threshold Voltage VGE(th) IC = 50mA, VCE = 10V 5.5 7.0 8.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 500A, VGE = 15V, Tj = 25°C*3 — 2.3 3.0 Volts Total Gate Charge QG 1 Emitter-Collector Voltage* VEC IC = 500A, VGE = 15V, Tj = 125°C*3 — 2.45 — Volts VCC = 1000V, IC = 500A, VGE = 15V — 3300 — nC — — 3.2 Volts Min. Typ. Max. Units — — 120 nf — — 14 nf 3 IE = 500A, VGE = 0V* Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Input Capacitance Cies Output Capacitance Coes Test Conditions VCE = 10V, VGE = 0V Reverse Transfer Capacitance Cres — — Inductive Turn-on Delay Time td(on) — — Load Rise Time Switch Turn-off Delay Time Time 2.6 nf 900 ns tr VCC = 1000V, IC = 500A, — — 500 ns td(off) VGE1 = VGE2 = 15V, RG = 3.0Ω, — — 1200 ns Fall Time tf Inductive Load — — 250 ns Diode Reverse Recovery Time*1 trr Switching Operation, — — 650 ns Diode Reverse Recovery Charge*1 Qrr IE = 500A — 50 — µC *1 *2 *3 *4 2 Symbol Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips. 02/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM500HA-34A Single IGBTMOD™ A-Series Module 500 Amperes/1700 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Units — — 0.025 °C/W — 0.042 °C/W — 0.015 — °C/W 3.0 — 10 Ω Rth(j-c)Q Per IGBT* Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi*4 Rth(c-f) Case to Heatsink,Thermal Grease Applied*4,*5 External Gate Resistance Max. — Thermal Resistance, Junction to Case Contact Thermal Resistance Typ. 4 RG *4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips. *5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 20V 5 13 800 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 12 Tj = 25oC 15 600 11 400 10 200 8 0 0 4 6 8 4 3 2 1 0 10 200 VCE = 15V Tj = 25°C Tj = 125°C 0 200 400 600 800 160 120 80 40 0 1000 VGE = 10V Tj = 25°C Tj = 125°C 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 10 IC = 1000A 8 IC = 500A 6 IC = 200A 4 2 0 0 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 02/10 Rev. 1 20 103 102 Tj = 25°C Tj = 125°C 101 20 103 Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2 9 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1000 TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 1 2 3 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) Cies 102 101 Coes Cres 100 VGE = 0V 4 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM500HA-34A Single IGBTMOD™ A-Series Module 500 Amperes/1700 Volts SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) VCC = 1000V VGE = 15V RG = 3.0Ω Tj = 125°C Inductive Load tr 103 102 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) Eon Eoff Err 101 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) GATE RESISTANCE, RG, (Ω) 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 102 102 Irr trr 102 EMITTER CURRENT, IC, (AMPERES) VCC = 1000V VGE = 15V RG = 3.0Ω Tj = 125°C Inductive Load 102 103 GATE CHARGE VS. VGE 103 VCC = 1000V VGE = 15V RG = 3.0Ω Tj = 25°C Inductive Load 101 101 101 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 103 Eoff Err 102 100 101 101 GATE RESISTANCE, RG, (Ω) 102 10-2 VCC = 1000V VGE = 15V IC = 500A Tj = 125°C Inductive Load COLLECTOR CURRENT, IC, (AMPERES) VCC = 1000V VGE = 15V IC = 500A Tj = 125°C Inductive Load 10-3 101 100 100 103 SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) 102 td(off) td(on) tf tr Eon 101 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) td(on) 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) tf 101 101 SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) SWITCHING TIME, td(on), tr, td(off), tf, (ns) td(off) 103 10-1 103 103 REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, td(on), tr, td(off), tf, (ns) 104 100 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) IC = 500A 16 VCC = 800V VCC = 1000V 12 8 4 0 0 1000 2000 3000 4000 5000 GATE CHARGE, QG, (nC) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.025°C/W (IGBT) Rth(j-c) = 0.042°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 4 02/10 Rev. 1